AS4C512M16D4B-62BCNTR - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
Артикул: AS4C512M16D4B-62BCNTR ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $12.5 | $12,50 |
| 10 | $11.2 | $112,00 |
| 100 | $9.8 | $980,00 |
| 500 | $8.9 | $4.450,00 |
| 1.000 | $8.1 | $8.100,00 |
AS4C512M16D4B-62BCNTR Обзор
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both rising and falling edges of the clock signal, effectively doubling the data rate. It is the fourth generation of DDR memory, succeeding DDR3, and offers higher speed, lower voltage, and increased density. DDR4 is a key component in modern computing systems, including servers, desktops, laptops, and embedded systems, where it serves as the main system memory or as a buffer for high-speed data processing.
Key features of the AS4C512M16D4B-62BCNTR include a fast clock rate of 1600 MHz, a CAS latency of 19 ns, and a parallel interface. It is JEDEC standard compliant, ensuring compatibility with industry-standard DDR4 memory controllers. The device supports on-die termination (ODT) and posted CAS, which improve signal integrity and reduce bus turnaround time. The 96-ball FBGA package provides a compact footprint suitable for space-constrained designs.
The architecture of the AS4C512M16D4B-62BCNTR utilizes an 8n prefetch design, which allows the internal DRAM core to operate at a lower frequency while the I/O interface transfers data at high speed. This architecture reduces power consumption and improves thermal performance. The device also includes auto-refresh and self-refresh modes to maintain data integrity with minimal power draw.
Typical applications for this DDR4 SDRAM include servers, networking equipment, industrial computing, and high-performance embedded systems. Its high density and speed make it ideal for applications requiring large memory capacity and fast data throughput, such as data centers, cloud computing, and advanced driver-assistance systems (ADAS).
When designing with this component, ensure proper decoupling capacitors are placed near the power pins to minimize noise. The device requires a stable 1.2V supply and careful PCB layout to maintain signal integrity at high speeds. Refer to the datasheet for detailed timing and layout guidelines.
Аналоги без доработки для AS4C512M16D4B-62BCNTR — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с AS4C512M16D4B-62BCNTR (тот же форм-фактор и посадочное место) — отличается по Data Rate, Package, Operating Temperature, Interface, CAS Latency.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
AS4C512M16D4B-62BCN
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
AS4C512M16D4A-62BCN
✅ Прямая замена✓ В наличии
$7.2 / шт.
Открыть даташит →MT40A512M16TB-062E:R
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$60 / шт.
Открыть даташит →H5AN8G6NAFR-UHC
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$5.7422 / шт.
Открыть даташит →K4A8G165WB-BCTD
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$37 / шт.
Открыть даташит →AS4C512M16D4B-62BCNTR Максимальные параметры и электрические характеристики
| Тип памяти | DDR4 SDRAM |
| Размер памяти | 8 Gbit (512M x 16) |
| Скорость передачи данных | 3200 MT/s |
| Clock Frequency | 1600 MHz |
| Задержка CAS | 19 ns |
| Напряжение питания | 1.2 V (1.14V to 1.26V) |
| Интерфейс | Parallel |
| Корпус | 96-FBGA (7.5x13 mm) |
| Рабочая температура | 0°C to 95°C |
| Тип монтажа | Surface Mount |
| JEDEC Standard | Compliant |
| Организация памяти | 512M x 16 |
| Revision | Rev.B |
| Статус RoHS | Compliant |
| Lead-Free | Yes |
Конфигурация выводов AS4C512M16D4B-62BCNTR
| Контакт A1 | VDD — Power supply (1.2V) |
| Контакт A2 | DQ0 — Data input/output 0 |
| Контакт A3 | DQ1 — Data input/output 1 |
| Контакт B1 | VSS — Ground |
| Контакт B2 | DQ2 — Data input/output 2 |
| Контакт B3 | DQ3 — Data input/output 3 |
| Контакт C1 | VDDQ — I/O power supply |
| Контакт C2 | DQ4 — Data input/output 4 |
| Контакт C3 | DQ5 — Data input/output 5 |
| Контакт D1 | VSSQ — I/O ground |
| Контакт D2 | DQ6 — Data input/output 6 |
| Контакт D3 | DQ7 — Data input/output 7 |
Типичное применение
AS4C512M16D4B-62BCNTR подходит для 6 применениеs: Server Memory, Networking Equipment, Industrial Computing, Automotive Infotainment, Consumer Electronics, Data Acquisition Systems.
Server Memory
The AS4C512M16D4B-62BCNTR provides high-density 8Gb DDR4 memory for server applications, enabling large memory pools for virtualization, cloud computing, and database workloads. Its 3200 MT/s data rate ensures fast data throughput, while the 1.2V operation reduces power consumption in data centers. The 96-ball FBGA package allows high-density board layouts, and the JEDEC compliance ensures compatibility with standard server memory controllers.
Рекомендуется
Networking Equipment
In networking equipment such as routers and switches, the AS4C512M16D4B-62BCNTR offers high-bandwidth memory for packet buffering and forwarding tables. The 1600 MHz clock speed supports line-rate processing, and the low latency (19 ns) minimizes delays. The commercial temperature range (0-95°C) is suitable for most networking environments, and the compact FBGA package fits in space-constrained line cards.
Рекомендуется
Industrial Computing
For industrial PCs and embedded systems, the AS4C512M16D4B-62BCNTR provides reliable, high-speed memory for real-time control and data acquisition. Its 8Gb density supports complex applications, and the 1.2V supply reduces heat generation in sealed enclosures. The device's JEDEC compliance ensures long-term availability and compatibility with industrial-grade processors.
Рекомендуется
Automotive Infotainment
The AS4C512M16D4B-62BCNTR can be used in automotive infotainment systems for navigation, multimedia, and instrument clusters. Its high data rate supports smooth graphics rendering, and the 8Gb capacity accommodates large maps and media files. However, the commercial temperature range (0-95°C) limits use to cabin environments, not under-hood applications. For automotive-grade, consider AEC-Q100 qualified parts.
Рекомендуется
Consumer Electronics
In high-end consumer electronics like gaming consoles and set-top boxes, the AS4C512M16D4B-62BCNTR delivers the memory bandwidth needed for immersive experiences. The 3200 MT/s data rate supports 4K video streaming and complex game physics. The low power consumption extends battery life in portable devices, and the compact package enables slim designs.
Рекомендуется
Data Acquisition Systems
For high-speed data acquisition systems, the AS4C512M16D4B-62BCNTR provides large buffer memory to store sampled data before processing. Its fast write speed ensures no data loss during continuous sampling, and the 8Gb capacity allows extended recording times. The parallel interface simplifies integration with FPGAs and DSPs, and the low voltage reduces noise in sensitive analog front-ends.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для AS4C512M16D4B-62BCNTR — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | AS4C512M16D4B-62BCN | MT40A512M16TB-062E:R | H5AN8G6NAFR-UHC |
|---|---|---|---|---|
| Package | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) |
| Brand | Alliance Memory | Alliance Memory | Micron Technology | SK Hynix |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Data Rate | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V |
| Operating Temperature | 0 to 95°C | 0 to 95°C | 0 to 95°C | 0 to 95°C |
| CAS Latency | 19 ns | 19 ns | 19 ns | 19 ns |
| JEDEC Compliance | Yes | Yes | Yes | Yes |
Ключевые отличия
- Drop-in replacement for major brands (против MT40A512M16TB-062E:R)
- Tape-and-reel packaging for automated assembly (против AS4C512M16D4B-62BCN)
- Commercial temperature range for cost savings (против H5AN8G6NAFR-UHC)
Заметки по проектированию
The AS4C512M16D4B-62BCNTR requires a stable 1.2V supply (VDD) and 1.2V I/O supply (VDDQ). Use low-ESR ceramic capacitors (0.1uF and 1uF) placed close to each power pin to decouple high-frequency noise. The total decoupling capacitance should be at least 2uF per device.
For high-speed DDR4 signals, maintain controlled impedance of 40-50 ohms for DQ/DQS lines and 40 ohms for address/command lines. Keep trace lengths matched within +/- 0.5mm for each byte lane. Use ground planes beneath the memory area to reduce EMI and signal crosstalk.
The AS4C512M16D4B-62BCNTR has a maximum operating temperature of 95°C. Ensure adequate airflow or heatsinking in high-ambient environments. The 96-ball FBGA package has a thermal resistance of approximately 20°C/W; calculate junction temperature to avoid exceeding the limit.
Информация о соответствии
RoHS compliant per distributor listings. No AEC-Q100 qualification for this commercial-temperature part.
