BSC032N04LSATMA1 - 40V 3.2mΩ OptiMOS 5 N-MOSFET | Infineon
Артикул: BSC032N04LSATMA1 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $0.85 | $0,85 |
| 10 | $0.72 | $7,20 |
| 100 | $0.55 | $55,00 |
| 500 | $0.46 | $230,00 |
| 1.000 | $0.39 | $390,00 |
| 5.000 | $0.32 | $1.600,00 |
BSC032N04LSATMA1 Обзор
What is an N-channel power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to switch and amplify DC-DC, motor-drive, and load-management signals. N-channel variants conduct between drain and source when a positive gate voltage is applied, and within the broader hierarchy they belong to discrete semiconductors, then to transistors, and finally to active electronic components. OptiMOS 5 is Infineon's fifth-generation 40V trench MOSFET process, optimized for ultra-low RDS(on) and low gate charge to minimize conduction and switching losses.
Key features of the BSC032N04LSATMA1 include 3.2 mΩ max RDS(on) at VGS=10V, 52W maximum power dissipation at Tc=25°C, and a SuperSO8 package with a Kelvin-source connection that suppresses gate-loop inductance for cleaner switching waveforms. The part is rated for operation from -55°C to +175°C junction temperature and is fully RoHS compliant with lead-free (Pb-free) terminal plating.
The OptiMOS 5 cell geometry uses a deep-trench structure with a refined epi profile, achieving lower figure-of-merit (FOM = RDS(on) × Qg) than earlier OptiMOS generations. This directly reduces switching losses in hard-switched topologies and conduction losses in synchronous-rectification positions, where the part typically replaces Schottky diodes for higher efficiency.
Typical applications include synchronous rectification in switched-mode power supplies (SMPS) for servers, desktops and telecom bricks, OR-ing and hot-swap controllers in 12V/24V distributed-power systems, motor-drive H-bridges for 12V brushless DC fans and small pumps, and battery-protection circuits in power tools and e-bikes. The 40V drain rating provides generous headroom above 12V and 24V nominal rails.
When designing with this MOSFET, always observe the SOA (safe operating area) curve provided in the datasheet at the intended VDS, ID, and pulse duration. A 10V VGS drive is recommended for full RDS(on) performance; lower gate voltages will significantly raise conduction loss. Use the exposed pad as the primary thermal path.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving procurement and design engineers a single-source reference for the BSC032N04LSATMA1.
Аналоги без доработки для BSC032N04LSATMA1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с BSC032N04LSATMA1 (тот же форм-фактор и посадочное место) — отличается по Package, Technology, Operating Junction Temperature, Operating Temperature Range, MSL Level.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
BSC032N04LSGATMA1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
BSC027N04LSGATMA1
✅ Прямая замена✓ В наличии
$0.54 / шт.
Открыть даташит →BSC059N04LS6ATMA1
✅ Прямая замена✓ В наличии
$0.74 / шт.
Открыть даташит →BSC011N03LSIATMA1
✅ Прямая замена✓ В наличии
$1.32 / шт.
Открыть даташит →IPD031N06L3GATMA1
✅ Прямая замена✓ В наличии
$0.48 / шт.
Открыть даташит →NTMFS5C430NL
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
BSC032N04LSATMA1 Максимальные параметры и электрические характеристики
| Manufacturer | Infineon Technologies |
| Part Series | OptiMOS 5 40V |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at Ta=25°C | 21 A |
| Continuous Drain Current (ID) at Tc=25°C | 98 A |
| RDS(on) max at VGS=10V | 3.2 mΩ |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 52 W |
| Gate-Source Voltage (VGS) | ±20 V |
| Technology | OptiMOS 5 trench |
| Корпус | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Тип монтажа | Surface Mount |
| Рабочая температура перехода | -55°C to +175°C |
| Статус RoHS | Compliant |
| Lead-Free | Yes |
Конфигурация выводов BSC032N04LSATMA1
| Контакт 1 | S (Kelvin) — Source (Kelvin connection for gate drive return) |
| Контакт 2 | S — Source |
| Контакт 3 | S — Source |
| Контакт 4 | G — Gate |
| Контакт 5 | D — Drain (also exposed pad) |
| Контакт 6 | S — Source |
| Контакт 7 | S — Source |
| Контакт 8 | S — Source |
| Контакт 9 | D (EP) — Drain exposed pad (thermal and electrical) |
Типичное применение
BSC032N04LSATMA1 подходит для 6 применениеs: 12V Synchronous Rectification in Server SMPS, 24V Industrial Bus Hot-Swap / OR-ing, Brushless DC Motor Drive (12V/24V), Battery Protection & Load Switch in Power Tools, DC-DC Buck Converter High-Side Switch, USB-PD / Type-C Sink Load Switch.
12V Synchronous Rectification in Server SMPS
The BSC032N04LSATMA1's 3.2 mΩ RDS(on) at VGS=10V and low Qg OptiMOS 5 process make it a textbook synchronous-rectifier FET for 12V-output switched-mode power supplies in servers and telecom bricks. In a typical half-bridge rectifier position the FET replaces a Schottky diode, eliminating forward-voltage drop and improving full-load efficiency by 1-3%. The 40V VDS rating gives generous headroom above the 12V rail during transient spikes, while the SuperSO8 5x6 exposed pad handles 50-70W continuous dissipation with proper copper-pour thermal design.
Рекомендуется
24V Industrial Bus Hot-Swap / OR-ing
With 40V VDS and 98A Tc-rated current, the BSC032N04LSATMA1 fits comfortably into 24V industrial distributed-power hot-swap and OR-ing controller circuits where transient voltages can reach 36V during load steps. The 3.2 mΩ on-resistance minimizes steady-state insertion loss in redundant power paths, while the ±20V VGS rating tolerates gate-drive transients common in industrial backplanes. The SuperSO8 footprint allows direct PCB reuse with Infineon's higher-voltage IPD series when 48V rails are needed.
Рекомендуется
Brushless DC Motor Drive (12V/24V)
The BSC032N04LSATMA1 is well suited as the low-side or high-side FET in H-bridge drivers for 12V and 24V brushless DC motors used in automotive fans, e-bike hub drives, and small pumps. Its 21A Ta continuous current matches typical 50-200W motor power levels, and the 3.2 mΩ RDS(on) limits conduction loss during PWM chopping at 20-50 kHz. The SuperSO8 5x6 package simplifies board layout versus D2PAK alternatives while still delivering >50A peak for inrush handling.
Рекомендуется
Battery Protection & Load Switch in Power Tools
In 18V/20V cordless power tools running on 5S Li-ion battery packs (21V nominal, 25.2V peak charged), the BSC032N04LSATMA1's 40V VDS rating provides ample margin above the pack's maximum voltage. Its 3.2 mΩ on-resistance keeps voltage drop below 100mV at 30A peak motor current, preserving usable battery capacity. The SuperSO8 package withstands the mechanical shock and thermal cycling typical of hand-held power tools while remaining cost-competitive for high-volume production.
Рекомендуется
DC-DC Buck Converter High-Side Switch
When used as the high-side control FET in a 12V-to-1.xV buck converter, the BSC032N04LSATMA1's low Qg and 3.2 mΩ RDS(on) reduce switching and conduction losses at 500 kHz-1 MHz switching frequencies common in point-of-load converters. The 40V VDS rating comfortably handles 12V automotive transients (load-dump up to 35V), and the exposed-drain SuperSO8 pad couples directly to the PCB ground plane for excellent thermal dissipation at 5-15W continuous power.
Рекомендуется
USB-PD / Type-C Sink Load Switch
The BSC032N04LSATMA1 functions as the protection FET in 20V USB-PD sink paths, where its 40V VDS rating tolerates the full 20V PD range plus transient spikes, and its 3.2 mΩ RDS(on) keeps conduction loss below 5% at 5A (100W PD). The SuperSO8 footprint is the de-facto standard for USB-PD load switches, allowing direct drop-in compatibility with most Type-C controller reference designs. The ±20V VGS tolerance also protects against gate-drive faults during PD negotiation.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для BSC032N04LSATMA1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | BSC032N04LSGATMA1 | BSC027N04LSGATMA1 | BSC059N04LS6ATMA1 | IPD031N06L3GATMA1 | NTMFS5C430NL |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi |
| Package | PG-TDSON-8-6 (SuperSO8 5x6) | PG-TDSON-8-6 (SuperSO8 5x6) | PG-TDSON-8-6 (SuperSO8 5x6) | PG-TDSON-8-6 (SuperSO8 5x6) | PG-TDSON-8-6 (SuperSO8 5x6) | SO-8FL 5x6 (pin-compatible) |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V | 60 V | 40 V |
| RDS(on) max @ VGS=10V | 3.2 mΩ | 3.2 mΩ | 2.7 mΩ | 5.9 mΩ | 3.1 mΩ | 4.0 mΩ |
| Gate-Source Voltage Rating | ±20 V | ±20 V | ±20 V | ±20 V | ±20 V | ±20 V |
| Technology / Process | OptiMOS 5 trench | OptiMOS 5 trench | OptiMOS 5 trench | OptiMOS 5 trench | OptiMOS 3 | onsemi trench |
Ключевые отличия
- Lowest RDS(on) in the OptiMOS 5 40V SuperSO8 family at this price point (против BSC059N04LS6ATMA1)
- Infineon OptiMOS 5 process gives best-in-class FOM (RDS(on) × Qg) (против IPD031N06L3GATMA1)
- Cross-brand pin-compatible drop-in via onsemi NTMFS5C430NL (против NTMFS5C430NL)
Заметки по проектированию
Estimated: At ID=20A continuous and RDS(on)=3.2 mΩ, conduction loss is P=I²R = 20²×0.0032 = 1.28W. On a 1 sq inch 1 oz copper pour the SuperSO8 5x6 delivers RθJA ≈ 50 C/W, yielding a 64°C temperature rise above ambient. For sustained operation above 25A, increase copper pour to 2+ sq inches or add forced airflow to keep Tj below the 175°C maximum.
Use the Kelvin-source pins (1-3) as the gate-drive return reference to suppress source-inductance ringing that would otherwise slow switching edges and increase switching loss. Keep the gate-drive loop area under 0.5 sq cm by routing gate trace directly over the source-pad copper. The exposed drain pad must be soldered to a continuous copper plane with at least 8 thermal vias (0.3 mm drill) to inner-layer heat spreading.
Do not exceed VGS=±20V; gate-oxide failure is permanent. Avoid slow gate rise/fall times — a 100 ns gate transition at 30A can generate millivolts of VDS ringing via drain inductance, potentially tripping UVLO on adjacent circuitry. Place a 10Ω gate-source resistor and a gate-drive pull-down of 10kΩ or less to keep the FET off during controller power-up.
Follow the Infineon SuperSO8 5x6 land-pattern reference: 1.0 mm pad length on source pins, 0.5 mm pad length on the drain EP with 0.3 mm via-array. Use 1 oz or 2 oz copper to minimize conduction-related PCB heating. Keep high-current traces (drain, source) at least 0.5 mm from gate traces to prevent capacitive coupling-induced false turn-on.
Информация о соответствии
RoHS and REACH compliant per Infineon product page. Lead-free (Pb-free) reflow-compatible terminal plating. Not AEC-Q100 qualified in standard variant; Infineon automotive-grade equivalents exist in OptiMOS 5 series with 'Q' suffix. Halogen-free per JEDEC JS709B.
