BSC097N06NSATMA1 - 60V N-Channel OptiMOS 5 MOSFET | Infineon
Артикул: BSC097N06NSATMA1 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $1.58 | $1,58 |
| 10 | $0.83 | $8,30 |
| 100 | $0.58 | $58,00 |
| 500 | $0.48 | $240,00 |
| 1.000 | $0.38 | $380,00 |
BSC097N06NSATMA1 Обзор
A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to control current flow between drain and source. It belongs to the discrete semiconductor hierarchy: transistor -> FET -> MOSFET -> power MOSFET -> N-channel enhancement-mode power MOSFET. Modern trench MOSFETs like OptiMOS 5 use advanced cell geometries and thin epitaxial layers to minimize both conduction loss (RDS(on)) and switching loss (Qg, Qgd), which together determine converter efficiency at high switching frequencies.
Key differentiating features include a typical gate charge of about 8 nC, an avalanche-rated body diode, 100% Rg-tested production flow, and an operating junction temperature range of -55°C to +150°C. The SuperSO8 footprint offers a superior thermal path versus standard SO-8 because the drain tab is the copper pad underneath the package, enabling PCB-side cooling without changing the silicon. These characteristics make the device competitive in 48 V telecom, server, and e-mobility auxiliary rails where every milliohm of RDS(on) translates directly into watts of loss.
Architecturally, the OptiMOS 5 cell uses a deep-trench structure with a lightly doped drift region and a split-gate field plate to balance RDS(on) against switching loss. The resulting figure of merit (FOM = RDS(on) x Qg) is one of the best in its voltage class, allowing 100 kHz+ hard-switched or 1 MHz+ soft-switched topologies without exceeding package thermal limits.
Typical applications include DC-DC converters for telecom/datacom, motor drive half-bridges in e-bike and small-EV inverters, synchronous rectification in 48 V isolated bus converters, hot-swap and OR-ing controllers in server CRPS rails, and Class-D audio amplifier output stages. The wide SOA margin also makes it suitable for battery protection in 12-48 V Li-ion packs where brief short-circuit events must be survived.
When designing with this MOSFET, ensure the gate driver can source and sink at least 2-4 A peak to charge the gate quickly and minimize the miller plateau dwell time. Keep the gate-loop inductance under 5 nH by placing the driver physically adjacent to the gate pin and using a tight gate-to-source return path.
Аналоги без доработки для BSC097N06NSATMA1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с BSC097N06NSATMA1 (тот же форм-фактор и посадочное место) — отличается по Package, Technology, Drain-Source Voltage (VDS), MSL Level, Operating Temperature Range.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
BSC090N06NS
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
BSC072N06NS5
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
BSC0993NDATMA1
✅ Прямая замена✓ В наличии
$1.32 / шт.
Открыть даташит →BSC034N06NSATMA1
✅ Прямая замена✓ В наличии
$0.65 / шт.
Открыть даташит →SiR626DP-T1-GE3
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
NTMFS4C029N
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
BSC097N06NSATMA1 Максимальные параметры и электрические характеристики
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 |
| Part Status | Active |
| FET Type | N-Channel |
| Drain-to-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at Tc=25C | 46 A |
| RDS(on) max at VGS=10 V | 9.7 mOhm |
| Power Dissipation at Ta=25C | 2.5 W |
| Power Dissipation at Tc=25C | 36 W |
| Рабочая температура перехода | -55C to +150C |
| Корпус / Типоразмер | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Тип монтажа | Surface Mount |
| Technology | OptiMOS 5 (Trench) |
| Статус RoHS | Compliant |
| Уровень MSL | 1 (Unlimited) |
| Avalanche Rated | Yes (EAS per datasheet) |
Конфигурация выводов BSC097N06NSATMA1
| Контакт 1 | S — Source |
| Контакт 2 | S — Source |
| Контакт 3 | S — Source |
| Контакт 4 | G — Gate |
| Контакт 5 | D — Drain |
| Контакт 6 | D — Drain |
| Контакт 7 | D — Drain |
| Контакт 8 | D — Drain |
| Контакт PAD | D — Drain (exposed thermal pad on underside of package) |
Область безопасной работы (DC)
Типичное применение
BSC097N06NSATMA1 подходит для 7 применениеs: 48 V Telecom / Datacom Synchronous Rectifier, E-Bike / Small-EV Motor Drive Half-Bridge, Hot-Swap / OR-ing Controller in Server CRPS Rails, Class-D Audio Amplifier Output Stage, Solar Microinverter / MPPT Stage, Battery Protection (BMS) for 12-48 V Li-ion Packs, USB-PD / Wall-Adapter Synchronous Flyback Rectifier.
48 V Telecom / Datacom Synchronous Rectifier
The BSC097N06NSATMA1 is widely used as the low-side synchronous rectifier in 48 V to point-of-load DC-DC converters for telecom and hyperscale datacom systems. Its 9.7 mOhm max RDS(on) at VGS=10 V and 46 A continuous drain current minimize conduction loss at the high secondary-side currents typical of 48 V bus architectures, while the SuperSO8 package exposes the drain directly to top-side or bottom-side copper for direct cooling through the PCB. Designers pair it with a primary-side 100 V or 150 V switch and a digital or analog controller such as the Infineon XDPL8219, achieving peak efficiencies above 96% in 48 V to 12 V isolated brick converters. The OptiMOS 5 trench technology keeps gate charge low enough to operate at 100-200 kHz without driving loss dominating the budget.
Рекомендуется
E-Bike / Small-EV Motor Drive Half-Bridge
In e-bike controller and small-EV inverter designs, the BSC097N06NSATMA1 serves as a half-bridge switch in a 3-phase MOSFET inverter. With 60 V VDS headroom above the 36-48 V battery rail and 46 A continuous ID, it comfortably delivers the 15-25 A phase currents required for 250-750 W motors while leaving thermal margin for the harsh under-seat environment. The SuperSO8 footprint allows direct migration to Infineon automotive-grade parts such as the IAUC60N06S5L073ATMA1 for OEM automotive variants. The OptiMOS 5 cell geometry also reduces switching loss versus older OptiMOS 3 designs, which directly extends battery range per charge by 3-5%.
Рекомендуется
Hot-Swap / OR-ing Controller in Server CRPS Rails
Server Common Redundant Power Supply (CRPS) rails use the BSC097N06NSATMA1 as the OR-ing MOSFET on the 12 V output bus to prevent reverse current flow between paralleled supplies during failover. Its 9.7 mOhm RDS(on) adds minimal voltage drop at full 40 A load, while the 60 V rating provides ample margin against inductive kickback during hot-plug events. The device's avalanche-rated body diode also survives brief short-circuit transients that occur when a failed supply is disconnected. Pair the part with a hot-swap controller such as the Infineon BTS700201ESPXUMA2 to form a complete protection island per supply output.
Рекомендуется
Class-D Audio Amplifier Output Stage
The BSC097N06NSATMA1 is a popular choice for the half-bridge output stage of mid-power Class-D audio amplifiers driving subwoofers and PA systems. Its low 9.7 mOhm RDS(on) and 46 A current rating handle continuous output currents of 200-500 W amplifiers without overheating, while the fast switching transition preserves audio fidelity and keeps EMI within FCC Class B limits. The SuperSO8 package also offers superior thermal performance over the standard SO-8, allowing direct PCB heatsinking via copper pours. Place a 10-100 ohm gate resistor in series with each MOSFET to dampen parasitic ringing from the gate-to-drain (Miller) capacitance during PWM transitions.
Рекомендуется
Solar Microinverter / MPPT Stage
In sub-300 W solar microinverters and MPPT charge controllers, the BSC097N06NSATMA1 is deployed as the main switch on the low-voltage battery side or in the synchronous rectification stage of an isolated push-pull topology. Its 60 V VDS handles 24 V battery systems plus transient spikes, and the 9.7 mOhm RDS(on) preserves the 96-98% peak efficiency required for residential solar installations. The OptiMOS 5 cell structure also handles the body-diode reverse-recovery stress of CCM operation without requiring additional snubber circuits. Pair the MOSFET with a digital MPPT controller such as the Infineon TLE94003EPXUMA1 to implement perturb-and-observe algorithms with sub-millisecond tracking response.
Рекомендуется
Battery Protection (BMS) for 12-48 V Li-ion Packs
The BSC097N06NSATMA1 is deployed as the discharge FET in 12-48 V lithium-ion battery management systems (BMS) where it must survive occasional short-circuit events. Its 60 V VDS comfortably exceeds the 58 V ceiling of a 13S Li-ion pack, and the avalanche-rated body diode absorbs the inductive energy of the load when the BMS disconnects during a fault. The 9.7 mOhm RDS(on) keeps voltage drop at full 40 A discharge under 400 mV, which is critical to maximize the usable capacity of high-current e-mobility packs. Place the part in a back-to-back common-source configuration with a second BSC097N06NSATMA1 to provide bidirectional switching and true reverse-current blocking.
Рекомендуется
USB-PD / Wall-Adapter Synchronous Flyback Rectifier
In 65-100 W USB Power Delivery wall adapters, the BSC097N06NSATMA1 operates as the secondary-side synchronous rectifier on a 24 V or 30 V output rail. Its 60 V VDS rating accommodates the secondary ringing typical of QR/ACF flyback topologies, and the 9.7 mOhm RDS(on) keeps full-load efficiency above 94% while remaining compatible with quasi-resonant controllers. The OptiMOS 5 family also has low Qrr which reduces dead-time loss and improves light-load efficiency - critical for meeting EU CoC Tier 2 no-load standby targets. Pair with a digital flyback controller such as the XDPL8219XUMA1 for adaptive ACF operation.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для BSC097N06NSATMA1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | BSC090N06NS | BSC072N06NS5 | BSC0993NDATMA1 | SiR626DP-T1-GE3 | NTMFS4C029N |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Vishay Intertechnology | onsemi |
| Package | PG-TDSON-8-6 (SuperSO8 5x6) | PG-TDSON-8-6 (SuperSO8 5x6) | PG-TDSON-8-6 (SuperSO8 5x6) | PG-TDSON-8-6 (SuperSO8 5x6) | Power-SO8 (compatible) | SO-8FL (compatible) |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 | OptiMOS 5 | OptiMOS | TrenchFET Gen V | Shielded-Gate Trench |
| Pin-to-Pin Compatible | Yes (Power-SO8 standard) | Yes | Yes | Yes | Yes | Yes |
Ключевые отличия
- Lowest-RDS(on) 60 V N-channel in the Infineon SuperSO8 family at the lowest price point (против BSC090N06NS)
- Industry-standard Power-SO8 footprint with cross-brand compatibility (против SiR626DP-T1-GE3)
- OptiMOS 5 trench technology with low figure-of-merit (FOM = RDS(on) x Qg) (против NTMFS4C029N)
Заметки по проектированию
Estimated: at ID=20 A continuous with 50% duty cycle and RDS(on)=9.7 mOhm at Tj=100C, conduction loss is approximately (20^2)(0.0097)(0.5)=1.94 W. With the SuperSO8 RthJA of about 40 C/W on a 1 oz 1 sq-in copper pour, the junction rise is roughly 78C above ambient - acceptable up to 70C ambient. For continuous 30 A operation, increase copper area to at least 2 sq-in on both top and bottom layers, or attach a small aluminum heatsink to the drain pad.
The SuperSO8 (PG-TDSON-8-6) drain pad is the primary thermal path. Use a thermal via array directly under the exposed pad - at least 9-12 vias of 0.3 mm drill on 0.6 mm pitch connecting to a 2 oz bottom-layer copper pour. The source pins 1-3 must connect to a wide (>=3 mm) copper pour that extends to the source sense point of the controller to avoid parasitic source inductance that distorts the gate drive.
Estimated: keep the gate-loop inductance under 5 nH by placing the gate driver within 10 mm of pin 4 and routing gate-source traces as a tightly coupled differential pair. Add a 10-100 ohm gate-source resistor to dampen the miller-induced turn-on spike. Place a 10 kohm gate-source pull-down to hold the MOSFET off during controller power-up and prevent inadvertent turn-on from stray charge injection.
Do not parallel two BSC097N06NSATMA1 parts without individual gate resistors - the positive temperature coefficient of RDS(on) helps balance current, but shared gate traces can cause high-frequency oscillation above 50 MHz. Also avoid exceeding the avalanche energy (EAS) rating during body-diode reverse recovery - if the design has hard-switched inductive loads, add a snubber or use a part with higher EAS such as the IPB120N10S405ATMA1.
In high-frequency synchronous rectifiers above 200 kHz, the dV/dt-induced turn-on of the low-side MOSFET by the high-side transition (Miller effect) becomes a significant loss mechanism. Estimated: a 10 V/ns dV/dt across the 200 pF Crss produces about 2 mA of displacement current - multiply by the gate-loop inductance to predict the unwanted Vgs spike. Mitigation: minimize Crss charge by selecting a lower-Qg part, add a 4.7 nF Cgs capacitor, and use a negative turn-off bias of -3 V on the gate if the driver supports it.
Информация о соответствии
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - choose IAUC60N06S5L073ATMA1 for automotive. Halogen-free matte-tin terminations.
