CSD18503Q5A - 40V N-Channel NexFET MOSFET 4.3mOhm | Texas Instruments
Артикул: CSD18503Q5A ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $1.42 | $1,42 |
| 10 | $1.28 | $12,80 |
| 100 | $1.12 | $112,00 |
| 500 | $0.98 | $490,00 |
| 1.000 | $0.85 | $850,00 |
CSD18503Q5A Обзор
A power MOSFET is a voltage-controlled semiconductor switch used in the power stage of converters, motor drives, and load-switch circuits; within the hierarchy of power management semiconductors, it sits alongside IGBTs and analog controllers as a core switching element. The NexFET process technology from TI optimizes the RDS(on) x gate-charge figure of merit, reducing both conduction and switching losses versus older trench MOSFET generations.
Key differentiating specifications include the low 4.3 mOhm RDS(on) at 10 V gate drive, a 40 V drain-source rating suitable for 12 V and 24 V input bus systems, the low-profile 5x6 mm SON package with exposed drain pad for low thermal resistance, and an operating junction range of -55C to +150C. The SON footprint also provides excellent PCB thermal spreading through the large exposed drain pad.
Typical applications include DC-DC converter power stages, synchronous rectification, motor drive half-bridges, and hot-swap or ORing load switches. In these circuits, the low RDS(on) directly reduces conduction losses and heat-sinking requirements, while the NexFET cell structure keeps switching losses low at high frequency.
Design consideration: with 4.3 mOhm on-resistance, conduction loss at high current (e.g., 50 A at 50C junction gives roughly 13.5 W) dominates, so thermal design and copper pour area determine usable current more than the 100 A package case limit. Verify SOA limits for pulsed loads per the TI datasheet (CSD18503Q5A datasheet, TI).
Аналоги без доработки для CSD18503Q5A — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с CSD18503Q5A (тот же форм-фактор и посадочное место) — отличается по Package, Power Dissipation (Ta), Technology, Power Dissipation (Tc).
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
CSD18563Q5A
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
CSD18502Q5B
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
CSD18540Q5B
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
CSD19534Q5A
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$0.62 / шт.
Открыть даташит →VBGQA1403
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
BSC040N10NS5
⚡ Тот же корпус ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
CSD18503Q5A Максимальные параметры и электрические характеристики
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 40 V |
| On-Resistance (RDS(on)) | 4.3 mOhm (3.4 mOhm typical) |
| Continuous Drain Current (Ta) | 19 A |
| Continuous Drain Current (Tc) | 100 A |
| Power Dissipation (Ta) | 3.1 W |
| Power Dissipation (Tc) | 120 W |
| Technology | NexFET |
| Корпус | 8-VSONP (DQJ), 5 mm x 6 mm |
| Тип монтажа | Surface Mount |
| Рабочая температура перехода | -55C to +150C |
| Configuration | Single |
| Количество выводов | 8 |
Конфигурация выводов CSD18503Q5A
| Контакт 1-3 | GATE — Gate drive input (pins 1-3 common gate) |
| Контакт 4-5 | SOURCE — Source connection |
| Контакт 6-8 | SOURCE — Source connection (continue) |
| Контакт PAD | DRAIN — Exposed drain pad for electrical and thermal connection |
Область безопасной работы
Типичное применение
CSD18503Q5A подходит для 6 применениеs: DC-DC Converter Power Stage, Synchronous Rectification, Motor Drive Half-Bridges, Hot-Swap and ORing Load Switches, Battery Protection and BMS, Automotive Body Power and Loads.
DC-DC Converter Power Stage
In 12 V and 24 V input buck converters, the CSD18503Q5A serves as the high-side or low-side switch. Its 40 V VDS covers transient overshoot, and the 4.3 mOhm RDS(on) keeps conduction loss low: at 20 A it dissipates only about 1.7 W at hot temperature. NexFET gate-charge optimization reduces switching loss at converter frequencies of 100 kHz to 500 kHz, improving overall efficiency versus older trench MOSFETs. Pair with a synchronous controller for best results.
Рекомендуется
Synchronous Rectification
As a secondary-side rectifier in isolated supplies or low-side FET in synchronous bucks, conduction loss dominates. The CSD18503Q5A 3.4 mOhm typical RDS(on) at 10 V drive minimizes IR loss; at 50 A conduction, dissipation is roughly 13.5 W hot, manageable with the SON exposed-drain-pad thermal design. The NexFET low Qrr reduces body-diode reverse recovery loss during commutation, improving efficiency and thermal margins in high-current rectifier positions.
Рекомендуется
Motor Drive Half-Bridges
The CSD18503Q5A fits 12 V/24 V motor drive half-bridge stages such as BLDC and brushed DC motor drivers. The 40 V rating handles inductive kickback with margin, and 4.3 mOhm RDS(on) limits resistive loss during continuous stall or high-torque events. The 5x6 mm SON package with exposed drain pad spreads heat into the PCB copper, supporting pulse loads; verify pulsed-current limits against the SOA curves in the TI datasheet for stall and PWM conditions.
Рекомендуется
Hot-Swap and ORing Load Switches
In backplane hot-swap and ORing FET applications on 12 V or 24 V rails, the CSD18503Q5A operates as a series pass element. Its low 4.3 mOhm RDS(on) reduces voltage drop and inrush-path loss; at 10 A load, drop is only 43 mV at hot conditions. The 40 V VDS provides headroom for fault transients. Pair with a hot-swap controller that manages gate slew during inrush to keep the MOSFET within its SOA during startup events.
Рекомендуется
Battery Protection and BMS
In 10S to 12S battery packs for portable and light-industrial equipment, the CSD18503Q5A serves as a discharge/charge path MOSFET. The 40 V class covers cell-stack transients, and the 4.3 mOhm RDS(on) reduces heat at continuous pack currents of 20 A to 40 A. The -55C to +150C junction range supports harsh environments. Place the SON package drain pad over a full copper area to keep junction temperature within limits during sustained discharge.
Рекомендуется
Automotive Body Power and Loads
For 12 V automotive loads such as pumps, fans, and lighting drivers, the CSD18503Q5A provides a robust switching element with 40 V VDS covering load-dump-adjacent transients in clamped systems. The NexFET technology achieves low RDS(on) of 4.3 mOhm for high-current channels, while the SON 5x6 mm footprint suits compact ECUs. For automotive-qualified designs, verify AEC-Q101/Q100 requirements and consider TI Q1-graded MOSFETs in the same family where qualification is mandatory.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для CSD18503Q5A — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | CSD18563Q5A | CSD18502Q5B | VBGQA1403 |
|---|---|---|---|---|
| Package | 8-VSONP (DQJ) 5x6 mm | 8-VSONP (DQJ) 5x6 mm - same | 8-VSONP (DQJ) 5x6 mm - same | SON 5x6 mm - compatible |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Will Semiconductor (VBsemi) |
| Technology | NexFET | NexFET | NexFET | Trench MOSFET |
Ключевые отличия
- Low conduction loss (против CSD18540Q5B)
- NexFET FOM optimization (против VBGQA1403)
- High case-power capability (против CSD18502Q5B)
Заметки по проектированию
At 4.3 mOhm RDS(on), conduction loss dominates: 50 A with hot junction yields roughly 13.5 W, well above the 3.1 W free-air rating. The SON exposed drain pad must sit on a minimum 1-square-inch copper pour with thermal vias to the inner layers. Usable current is determined by thermal design, not the 100 A case rating.
Solder the exposed drain pad to a full ground/drain plane using an array of thermal vias (0.3 mm drill, filled or plugged). Minimize the power loop area between high-side and low-side MOSFETs and input bulk capacitors to reduce parasitic inductance and ringing on the drain node during switching transitions.
Verify pulsed-load limits against the SOA curves in the TI datasheet for inrush, stall, and short-circuit events. Ensure gate drive reaches the full 10 V specified for the 4.3 mOhm RDS(on) point; driving at lower VGS substantially increases on-resistance. Do not exceed the 40 V VDS rating - add clamping for inductive loads.
Информация о соответствии
Compliance data not present in provided web data. Verify RoHS/REACH status on the TI product page quality documentation.
