H5CG44MEBDX014N - 16Gb DDR5-4800 SDRAM x4 | SK hynix
Артикул: H5CG44MEBDX014N ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
H5CG44MEBDX014N Обзор
DDR5 SDRAM is the fifth generation of double-data-rate synchronous dynamic random-access memory, the memory class that sits at the top of the DRAM hierarchy (DDR5 -> DDR SDRAM -> SDRAM -> semiconductor memory). Compared with DDR4, DDR5 doubles the bank-group count, moves the power management from the module to the device ecosystem via PMIC-equipped DIMMs, and improves channel efficiency with two independent 32-bit sub-channels per DIMM. Individual DDR5 components such as the H5CG44MEBDX014N are the building blocks soldered onto RDIMMs, SODIMMs, CUDIMMs, and embedded memory-down PCBs.
Key features of this device include the 16 Gb density per component (4G x4 organization), a 4800 Mbps/pin data rate at 1.1 V operation, and the JEDEC-class DDR5 electrical interface with on-die termination, decision-feedback equalization, and command/address training features. The x4 organization is specifically favored in ECC-heavy server designs, where multiple x4 devices contribute to chipkill-class error correction on registered DIMMs.
Technically, the 1st-gen M-die implements DDR5 burst length 16, two per-field refresh modes (fine granularity refresh modes 1x/2x/4x), same-bank refresh, and bank-group architecture per the JEDEC DDR5 standard. The 78-ball FBGA surface-mount package supports standard memory-controller routing and thermal design for high-density server platforms.
Typical applications include data-center server main memory on RDIMMs, embedded computing modules, industrial controllers, firmware logging buffers, and replacement sourcing for memory-down main-board designs.
Design consideration: verify your memory controller's DDR5 speed-grade support and DFE training capability; DDR5-4800 operation at 1.1 V requires careful power-integrity design on the VDD/VDDQ rails and reference-less DQS training in the controller.
This page synthesizes distributor inventory, drop-in alternative data, and procurement guidance not found in the manufacturer datasheet alone.
Аналоги без доработки для H5CG44MEBDX014N — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с H5CG44MEBDX014N (тот же форм-фактор и посадочное место) — отличается по Density, Organization, Package, Data Rate, Interface.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
H5CG48MEBDX014N
✅ Прямая замена✓ В наличии
$41.68 / шт.
Открыть даташит →H5CG46MEBDX015N
✅ Прямая замена✓ В наличии
$3.65 / шт.
Открыть даташит →H5CG44MEBDX014
✅ Прямая замена✓ В наличии
$3.12 / шт.
Открыть даташит →H5CG48MEBDX018N
✅ Прямая замена✓ В наличии
$1 / шт.
Открыть даташит →H5CG48AGBDX014N
✅ Прямая замена✓ В наличии
$70 / шт.
Открыть даташит →H5CG44AGBDX018N
✅ Прямая замена✓ В наличии
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Открыть даташит →H5CG44MEBDX014N Характеристики
| Тип памяти | DDR5 SDRAM |
| Density | 16 Gb |
| Организация памяти | 4G x4 |
| Скорость передачи данных | 4800 Mbps/pin (DDR5-4800) |
| Clock Frequency | 2400 MHz |
| Supply Voltage (VDD) | 1.1 V |
| Корпус | 78-ball FBGA |
| Die Generation | 1st-gen DDR5 M-die |
| Тип монтажа | Surface Mount |
| Интерфейс | JEDEC DDR5 |
Руководство по цоколевке H5CG44MEBDX014N в корпусе 78-ball fbga
Цоколевка для H5CG44MEBDX014N (корпус 78-ball fbga). Нумерация выводов, функции и схемы подключения определены в техническом описании производителя. Обратитесь к нему для точного посадочного места и рекомендаций по пайке.
Нет подробных данных о распиновке для H5CG44MEBDX014N.
Обратитесь к даташиту для полной конфигурации выводов.
Типичное применение
H5CG44MEBDX014N подходит для 6 применениеs: Data Center Server Main Memory, Embedded Computing Modules, Industrial Controllers and Automation, Firmware Boot and Embedded Logging, Desktop and Client Memory-Down Designs, Replacement Sourcing and BOM Recovery.
Data Center Server Main Memory
The H5CG44MEBDX014N is a core building block for data-center RDIMM main memory. Its x4 organization is preferred in ECC-heavy server designs because memory controllers combine eight x4 devices per rank to achieve chipkill-class error correction, catching whole-device failures that x8 organizations cannot. Operating at DDR5-4800 (4800 Mbps/pin, 2400 MHz) on 1.1 V, it delivers the bandwidth-per-watt profile expected of modern server DRAM. In an RDIMM layout, the component connects through the register clock driver (RCD) for command/address and the module PMIC manages rail conversion from 12 V to the 1.1 V VDD domain. Design teams should validate on-die termination and DFE training margins across the full population.
Рекомендуется
Embedded Computing Modules
Embedded computing modules (COM Express, SMARC, OSM) use DDR5 components such as the H5CG44MEBDX014N soldered memory-down beside the SoC. The 16 Gb x4 configuration lets designers build 4 GB to 16 GB memory-down arrays on a small footprint without SO-DIMM connectors, improving shock/vibration robustness for industrial and edge deployments. At DDR5-4800 on a 1.1 V rail, power consumption per transfer drops versus DDR4, extending thermal headroom in fanless enclosures. The 78-ball FBGA package supports standard DDR5 routing with fly-by command/address topology. Layout teams must respect DDR5 length-matching rules and reference-plane continuity; GlobalSpec explicitly lists the H5CG44MEBD family for computing modules and industrial controllers.
Рекомендуется
Industrial Controllers and Automation
Industrial controllers, PLCs, and motion-control CPUs rely on DRAM main memory for runtime code, buffering, and logging. The H5CG44MEBDX014N fits these roles with its 16 Gb density, DDR5-4800 bandwidth for deterministic data movement, and 1.1 V operation that reduces heat inside sealed control cabinets. Because industrial designs have long lifetimes, using standard JEDEC DDR5 78-ball FBGA components like this one simplifies second sourcing from the SK hynix MEBD family (H5CG46MEBDX015N, H5CG48MEBDX014N). Memory-down placement also avoids connector contact oxidation issues seen in socketed DIMMs in humid or corrosive factory environments. Designers should derate ambient temperatures and verify refresh behavior at elevated case temperatures per the SK hynix datasheet.
Рекомендуется
Firmware Boot and Embedded Logging
DDR5 SDRAM serves as high-speed execution and logging memory alongside boot flash in embedded logging platforms, telemetry recorders, and network appliances. The H5CG44MEBDX014N's 16 Gb capacity per device gives 2 GB per eight devices in x4 arrays, enough for ring-buffer event logging at line rate. Its DDR5-4800 interface sustains the sustained-write bandwidth these recorders need, while 1.1 V operation suits battery-backed or PoE-powered edge units. GlobalSpec lists the H5CG44MEBD family specifically for 'firmware boot, embedded logging' use cases. Pairing the DDR5 component with serial NOR flash (M25P/N25Q class devices) gives a two-tier memory hierarchy: NOR for nonvolatile boot, DDR5 for fast runtime execution and log capture before committing to storage.
Рекомендуется
Desktop and Client Memory-Down Designs
Mini-PCs, thin clients, gaming peripherals, and set-top platforms frequently implement DDR5 memory-down rather than SODIMM slots to reduce height, cost, and connector count. The H5CG44MEBDX014N's x4 organization supports ECC-capable workstation builds, while its DDR5-4800 speed grade matches mainstream client CPU memory controllers. At 1.1 V VDD, platform power budgets benefit versus DDR4-3200 equivalents. Because DDR5 splits each channel into two independent 32-bit sub-channels, even two-component memory-down arrays gain concurrency benefits. PCB designers should follow the client reference design for DQS training routing and PMIC placement (5 V to 1.1 V conversion typically via a dedicated DDR5 PMIC close to the DRAM balls).
Рекомендуется
Replacement Sourcing and BOM Recovery
A major use case for this exact MPN is replacement sourcing: repairing server DIMMs, recovering BOMs for discontinued module builds, or fulfilling maintenance contracts on platforms standardized on the SK hynix H5CG44MEBDX014N die. Independent distributors (PCXco, NX Electronics/Nextron, SBIT, HKinventory) stock or broker this part for RFQ as of 2026-09-05. When original inventory dries up, the same-package SK hynix family members (H5CG48MEBDX014N, H5CG46MEBDX015N, H5CG44MEBDX014) provide drop-in footprint matches; verify die-revision markings and re-run memory training validation on the target platform before shipping repaired units.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для H5CG44MEBDX014N — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | H5CG48MEBDX014N | H5CG46MEBDX015N | H5CG44MEBDX014 | H5CG48AGBDX014N |
|---|---|---|---|---|---|
| Package | 78-ball FBGA | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same |
| Brand | SK hynix | SK hynix | SK hynix | SK hynix | SK hynix |
| Density | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Organization | 4G x4 | 4G x4 | x4 (verify marking) | 4G x4 | x4 (verify marking) |
| Speed Grade | DDR5-4800 | DDR5-4800 | DDR5-4800 class | DDR5-4800 | DDR5-4800 (speed suffix differs) |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Die Family | 1st-gen M-die (MEBD) | MEBD (M-die) | MEBD (M-die) | MEBD (M-die) | AGBD (different die generation) |
Ключевые отличия
- JEDEC-standard 78-ball FBGA footprint with x4 ECC-optimized organization (против H5CG48MEBDX014N)
- 1st-gen M-die maturity with broad broker availability (против H5CG44AGBDX018N)
- Exact-BOM revision matching via N-suffix variant (против H5CG44MEBDX014)
Заметки по проектированию
DDR5 shifts power management toward the memory subsystem: the H5CG44MEBDX014N operates at 1.1 V VDD, so any memory-down design needs a dedicated DDR5 PMIC (typically converting a 5 V or 12 V input) placed close to the DRAM balls to minimize IR drop and transient response across the 4800 Mbps/pin switching load. Size the PMIC for peak simultaneous switching current of the full x4 array, and use wide, short power planes under the FBGA. Verify VDD/VDDQ ripple stays within the JEDEC DDR5 window across all burst patterns.
Route DDR5 fly-by command/address with matched lengths across all devices, and keep DQ/DQS length matching within the DDR5-4800 skew budget specified in the SK hynix datasheet. The 78-ball FBGA allows via-in-pad escape on outer DQ balls to shorten stubs on high layer-count boards. Maintain solid reference planes (no splits under DQ/DQS routing), and use the datasheet-recommended ODT settings during controller training. For memory-down arrays of eight x4 devices per rank, symmetrical placement about the controller minimizes inter-device skew.
Do not intermix MEBD and AGBD die families in the same rank without re-running memory training and validating SPD data - die generations can differ in DFE training behavior and timing margins even at the same DDR5-4800 speed grade. Also confirm the exact MPN suffix (the 'N' revision) matches your approved vendor list, and always read package-marking die revision before second-sourcing repairs. Ignoring these checks commonly causes intermittent training failures that only appear at temperature extremes.
Информация о соответствии
Compliance data not stated in the verified web sources for this MPN. Consult the official SK hynix product environmental report for the H5CG44MEBDX014N before certification.