IRF1010ESTRLPBF - 60V 84A N-Channel MOSFET | Infineon
Артикул: IRF1010ESTRLPBF ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
IRF1010ESTRLPBF Обзор
A power MOSFET is a voltage-controlled semiconductor switch used in the power stage of virtually every electronic system, sitting within the hierarchy of power semiconductors beneath power management ICs and alongside IGBTs. The IRF1010ESTRLPBF belongs to the HEXFET family originally developed by International Rectifier, now part of Infineon Technologies, and uses a planar cell structure specifically chosen for its wide safe operating area (SOA).
Key features include a low on-state resistance of 12 mOhm at VGS=10V, a total gate charge of 86.6 nC, and a 100% avalanche energy tested ruggedness design. The planar architecture trades some figure-of-merit versus modern trench devices for substantially better SOA behavior, which matters in linear-mode and hard-switching applications.
Product qualification is performed according to JEDEC standards, and the part is multi-sourced across distribution partners for broad availability. The D2PAK package provides a large exposed drain tab for efficient heat transfer into the PCB copper pour, supporting the full 200 W (Tc) rating with adequate heatsinking.
Typical applications include DC-DC converter power stages, motor control H-bridges, battery-powered inverter and BMS switch stages, welding equipment, and UPS systems where high current and wide SOA are required.
Design consideration: keep gate drive at 10 V for the specified RDS(on); the part is not logic-level, so 3.3 V or 5 V microcontroller PWM outputs require a gate driver.
This page synthesizes verified distributor data, drop-in cross-references, and practical design notes not consolidated in the manufacturer datasheet.
Аналоги без доработки для IRF1010ESTRLPBF — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с IRF1010ESTRLPBF (тот же форм-фактор и посадочное место).
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IRF1407S
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRF2807ZS
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRFZ48STRLPBF
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
STB60NF06T4
✅ Прямая замена✓ В наличии
$0.7955 / шт.
Открыть даташит →VBL1615
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRF1010ESTRLPBF Максимальные параметры и электрические характеристики
| FET Type | N-Channel |
| Technology | HEXFET planar |
| Drain-Source Voltage (Vdss) | 60 V |
| Continuous Drain Current (Id) @ Tc | 84 A |
| Power Dissipation (Pd) @ Tc | 200 W |
| On-Resistance (RDS on) @ VGS=10V | 12 mOhm |
| Total Gate Charge (Qg) | 86.6 nC |
| Operating Mode | Enhancement |
| Drive Voltage | 10 V (standard level) |
| Тип монтажа | Surface Mount |
| Корпус | D2PAK (TO-263) |
| Qualification | JEDEC standard qualified |
| Structure | Planar cell (wide SOA) |
| Avalanche Testing | 100% avalanche energy tested |
| Sourcing | Multi-vendor, broad distribution availability |
| Pb-Free / RoHS | PBF (Pb-free) suffix |
Конфигурация выводов IRF1010ESTRLPBF
| Контакт 1 | G — Gate - voltage-controlled input terminal |
| Контакт 2 | D — Drain - connected to metal tab for heat dissipation |
| Контакт 3 | S — Source - return terminal for load current |
Область безопасной работы (IRF1010ES, Tc=25C)
Типичное применение
IRF1010ESTRLPBF подходит для 6 применениеs: DC-DC Converter Power Stage, Motor Control H-Bridges, Battery Management and Protection Switches, Welding and Plasma Equipment, UPS and Inverter Systems, Automotive and Heavy-Duty Load Switches.
DC-DC Converter Power Stage
The IRF1010ESTRLPBF serves as the main switching element in buck, boost, and full-bridge DC-DC converters on 12 V to 48 V buses, where its 60 V rating provides headroom above 36 V battery systems. Its 12 mOhm on-resistance at VGS=10V limits conduction loss; estimated at 20 A the loss is I^2 x R = 4.8 W, manageable with a solid D2PAK copper pour. The planar wide-SOA cell tolerates hard-switching stress and ringing better than many trench devices, though the 86.6 nC gate charge demands a driver capable of several amps of gate current to keep switching losses low at frequencies above 50 kHz.
Рекомендуется
Motor Control H-Bridges
In brushed and brushless DC motor drives, the IRF1010ESTRLPBF's combination of 84 A continuous rating, 60 V breakdown, and planar-cell SOA makes it a rugged choice for H-bridge and three-phase legs driving 12 V/24 V motors. Stall and reversal events create simultaneous high current and elevated drain voltage; the wide safe operating area of the planar structure provides margin in these events where trench parts can hot-spot. Freewheeling through the intrinsic body diode is tolerated in low-frequency PWM (under 20 kHz). Place the device with the D2PAK tab on a dedicated copper heatsink area and observe dead-time to limit diode conduction loss.
Рекомендуется
Battery Management and Protection Switches
Battery disconnect, ideal-diode-OR, and protection FET stages in 24 V and 36 V Li-ion and lead-acid systems use the IRF1010ESTRLPBF as a low-loss series switch. At 30 A load, conduction dissipation is an estimated 10.8 W (I^2 x 12 mOhm), so two devices in parallel halve the per-part loss to about 5.4 W each. The 60 V rating covers charging transients and cell-balancing overvoltage conditions on 10-cell stacks. Because the part is standard-level drive, the BMS controller must include a 10-12 V charge pump or driver to achieve the rated on-resistance and avoid partial-enhancement heating.
Рекомендуется
Welding and Plasma Equipment
Inverter-based welders and plasma cutters stress switches with high peak currents and repeated overload events; the IRF1010ESTRLPBF's planar HEXFET structure and 100% avalanche energy testing are directly aligned with this environment. The 84 A (Tc) rating supports parallel arrays of four to six devices for 200 A-class output stages on 48 V buses. The wide SOA reduces derating anxiety during arc-start transients. Thermal design is the dominant constraint: each device's tab needs a bonded insulated substrate or large copper plane, and gate resistors should be chosen to damp ringing without excessive switching loss.
Рекомендуется
UPS and Inverter Systems
Line-interactive and double-conversion UPS units switch battery voltage (24 V to 48 V nominal) into high-frequency AC links, and the IRF1010ESTRLPBF fits the primary-side full-bridge at these voltages with margin under the 60 V limit. Its rugged avalanche rating helps absorb leakage-inductance spikes during load steps between line and battery mode. At 40 A pulses the low 12 mOhm on-state keeps conduction heat manageable; the 86.6 nC gate charge requires a robust push-pull driver. Layout should minimize the commutation loop area to control overshoot and EMI.
Рекомендуется
Automotive and Heavy-Duty Load Switches
High-current load switches for solenoids, pumps, heaters, and winches in 12 V and 24 V vehicle systems use the IRF1010ESTRLPBF as a robust low-side element. The 60 V rating absorbs inductive kick from solenoid and motor loads without external clamping in many designs, aided by 100% avalanche testing. Its planar SOA tolerates soft-start and linear pre-charge operation. For intelligent switching, pair with a protection controller providing current sense and fault latch-off. Estimated dissipation at a 25 A continuous load is 7.5 W, which sets the copper-pour requirement for the tab.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IRF1010ESTRLPBF — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IRF1407S | IRFZ48STRLPBF | STB60NF06T4 | VBL1615 |
|---|---|---|---|---|---|
| Package | D2PAK (TO-263) | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same |
| Brand | Infineon | Infineon | Vishay | STMicroelectronics | VBsemi |
| Vdss | 60 V | 75 V | 60 V | 60 V | 60 V |
| Continuous Drain Current | 84 A (Tc) | ~83 A (Tc) class | ~64 A class | ~60 A class | comparable to IRF1010ES class |
| RDS(on) | 12 mOhm | ~7.5-14 mOhm class | ~14 mOhm class | ~14 mOhm class | comparable |
| Technology | Planar HEXFET (wide SOA) | Planar HEXFET | HEXFET-derived | STripFET II trench | planar-equivalent design |
| Drive Level | Standard (10 V) | Standard (10 V) | Standard (10 V) | Standard (10 V) | Standard (10 V) |
| Lifecycle Status | Active | Active | Active | Active | Active |
Ключевые отличия
- Wider safe operating area from planar cell structure (против STB60NF06T4)
- Higher current rating in same footprint (против IRFZ48STRLPBF)
- JEDEC qualification with multi-vendor sourcing (против VBL1615)
Заметки по проектированию
The 200 W (Tc) and 84 A (Tc) ratings assume case held at 25C, which in practice means a large copper area or heatsink under the D2PAK tab. Estimated: at 40 A continuous, conduction loss is 40^2 x 0.012 = 19.2 W; use at least 1 square inch of 2 oz copper on the drain pad, or an insulated-metal substrate for sustained loads above 30 A. Derate linearly to zero at the maximum rated junction temperature and verify with thermal imaging during qualification.
This is a standard-level MOSFET: the 12 mOhm RDS(on) is specified at VGS=10V. Driving from a 5 V logic PWM output leaves the device partially enhanced, multiplying conduction loss and risking thermal runaway. Always use a gate driver delivering 10-12 V. The 86.6 nC total gate charge means switching at 50 kHz with a 10 Ohm gate resistor requires an estimated peak gate current of about 1.2 A - size the driver accordingly.
Minimize the drain-source power loop: place input bulk and decoupling capacitance directly across the bridge leg, keep the tab pour solid and stitched with multiple thermal vias to inner planes. Add a small series gate resistor (5-15 Ohm) close to the gate pin to damp parasitic oscillation from lead inductance. A gate-source pull-down resistor of 10 kOhm prevents float-turn-on during controller startup or brownout.
Информация о соответствии
PBF suffix indicates Pb-free/RoHS version per PartGenie compliance notes (RoHS Lead-Free). JEDEC standard qualification per Infineon datasheet summary. Not an automotive AEC-Q100 qualified part per available data.
