IRF7341GTRPBF - 55V Dual N-Channel MOSFET 5.1A SO-8 | Infineon
Артикул: IRF7341GTRPBF ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $1.45 | $1,45 |
| 10 | $1.28 | $12,80 |
| 100 | $1.05 | $105,00 |
| 500 | $0.89 | $445,00 |
| 1.000 | $0.76 | $760,00 |
IRF7341GTRPBF Обзор
A dual MOSFET array is a single package containing two electrically independent MOSFET die that share only the physical substrate and thermal pad. This arrangement belongs to the broader category of discrete semiconductors, specifically power MOSFETs, which sit within the semiconductor hierarchy alongside IGBTs, BJTs, and JFETs. Dual MOSFETs are commonly used in synchronous buck converters, half-bridge stages, motor drivers, and load-switch applications where two switches must be tightly co-packaged for layout symmetry and thermal coupling.
The IRF7341GTRPBF utilizes Infineon's planar IR MOSFET process technology with a 175°C junction rating, enabling higher safe operating area than standard 150°C parts. Its low on-resistance per silicon area reduces conduction losses in continuous-current paths, while the SO-8 footprint exposes a thermal pad that allows PCB copper pour to act as a heatsink.
Typical applications include DC-DC buck and boost converter high-side and low-side switches, motor drive H-bridges, battery protection circuits, and power OR-ing. The dual-die arrangement makes it particularly suited to synchronous rectification where the high-side and low-side FETs must share thermal mass.
When designing with this part, ensure that the SO-8 exposed pad is soldered to a copper pour of at least 1 square inch to keep junction temperature within safe limits. Switching losses dominate at high frequency, so gate-drive resistance and dead-time selection are critical to prevent shoot-through.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving procurement and design engineers a single source for evaluation.
Аналоги без доработки для IRF7341GTRPBF — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с IRF7341GTRPBF (тот же форм-фактор и посадочное место) — отличается по Technology, Configuration, Package, Continuous Drain Current (ID), Drain-Source Voltage (VDS).
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IRF7341TRPBF
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRF7319TRPBF
✅ Прямая замена✓ В наличии
$0.62 / шт.
Открыть даташит →IRF7328PBF
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRF7389
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
VBA3638
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRF7105TRPBF
✅ Прямая замена✓ В наличии
$0.3 / шт.
Открыть даташит →IRF7341GTRPBF Максимальные параметры и электрические характеристики
| Drain-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) | 5.1 A |
| On-Resistance (RDS(on)) max | 50 mOhm at VGS=10V |
| Power Dissipation (PD) | 2.4 W |
| Maximum Junction Temperature | 175 C |
| Configuration | Dual N-Channel |
| Technology | IR HEXFET Planar MOSFET |
| Корпус | 8-SO (SOIC-8) |
| Тип монтажа | Surface Mount |
| Диапазон рабочих температур | -55 C to +175 C |
| Статус RoHS | Compliant |
| Lead-Free | Yes (PBF suffix) |
Конфигурация выводов IRF7341GTRPBF
| Контакт 1 | S1 — Source of MOSFET 1 |
| Контакт 2 | S1 — Source of MOSFET 1 |
| Контакт 3 | G1 — Gate of MOSFET 1 |
| Контакт 4 | D1 — Drain of MOSFET 1 |
| Контакт 5 | D2 — Drain of MOSFET 2 |
| Контакт 6 | G2 — Gate of MOSFET 2 |
| Контакт 7 | S2 — Source of MOSFET 2 |
| Контакт 8 | S2 — Source of MOSFET 2 |
Область безопасной работы (DC)
Типичное применение
IRF7341GTRPBF подходит для 6 применениеs: Synchronous Buck Converter, H-Bridge Motor Driver, Battery Protection Circuit, Load Switch / Power OR-ing, DC-DC Boost Converter, Class-D Audio Amplifier Output Stage.
Synchronous Buck Converter
The IRF7341GTRPBF's dual N-channel arrangement makes it well suited to synchronous buck converter high-side and low-side switch positions in 12V and 24V input rails. Each die supports 5.1A continuous current with 50 mOhm RDS(on) at VGS=10V, reducing conduction losses versus discrete single MOSFETs. The shared SO-8 thermal pad couples the two die thermally, improving current sharing during transient loads. Designers should size the PCB copper pour to at least 1 square inch to keep junction rise under 50°C at full load.
Рекомендуется
H-Bridge Motor Driver
In H-bridge motor drive topologies the IRF7341GTRPBF provides two of the four switches in a single SO-8 package, halving board area versus four discrete MOSFETs. The 55V VDS rating handles 24V brushed DC motor back-EMF with margin, and 175°C junction rating supports the high-current transients during motor stall. Gate drive timing must include dead-time to prevent shoot-through; recommended dead-time is 100-200ns depending on switching frequency.
Рекомендуется
Battery Protection Circuit
The IRF7341GTRPBF serves as a back-to-back dual switch in lithium-ion battery protection circuits, where its 55V VDS rating protects against transient surges during hot-plug events. The 50 mOhm RDS(on) per channel adds minimal series resistance, preserving battery efficiency under load. The SO-8 form factor suits space-constrained battery management boards. Designers should add a gate-source Zener clamp to prevent VGS over-voltage during fault conditions.
Рекомендуется
Load Switch / Power OR-ing
The IRF7341GTRPBF's dual N-channel configuration enables parallel load-switch paths for redundant power OR-ing in telecom and server backplanes. Each die carries up to 5.1A, so parallel channels handle 10A combined load with current sharing. The 55V VDS rating exceeds standard 48V telecom rails with margin for transient spikes. Low RDS(on) of 50 mOhm minimizes voltage drop across the switch during full load.
Рекомендуется
DC-DC Boost Converter
For boost converter topologies stepping 12V up to 24V or higher, the IRF7341GTRPBF can serve as the main switch and synchronous rectifier in a single SO-8 package. Its 55V VDS rating handles the 24V output with adequate margin, and 50 mOhm RDS(on) keeps efficiency above 92% at moderate loads. Switching frequency is limited by gate charge; at 100kHz the part performs well, but above 500kHz switching losses dominate.
Рекомендуется
Class-D Audio Amplifier Output Stage
The IRF7341GTRPBF suits Class-D audio amplifier half-bridge output stages where dual N-channel switches reduce loop area and EMI. The 50 mOhm RDS(on) and fast switching characteristics deliver clean PWM output with minimal dead-time distortion. Its 55V VDS rating handles up to ±25V audio supply rails. Thermal management is critical at high audio power; the SO-8 exposed pad must be soldered to at least 2 square inches of copper for sustained output.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IRF7341GTRPBF — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IRF7341TRPBF | IRF7319TRPBF | IRF7328PBF | IRF7389 | VBA3638 | IRF7105TRPBF |
|---|---|---|---|---|---|---|---|
| Package | 8-SO (SOIC-8) | 8-SO (SOIC-8) - same | 8-SO (SOIC-8) - same | 8-SO (SOIC-8) - same | 8-SO (SOIC-8) - same | 8-SO (SOIC-8) - same | 8-SO (SOIC-8) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Configuration | Dual N-Channel | Dual N-Channel | Dual N-Channel | Dual N-Channel | Dual N-Channel | Dual N-Channel | Complementary N+P Channel |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Ключевые отличия
- 55V VDS rating for 24V industrial bus (против IRF7319TRPBF)
- Dual N-channel in single SO-8 (против Two discrete single-MOSFET SO-8 parts)
- 175°C junction temperature rating (против Industry-standard 150°C parts)
Заметки по проектированию
Estimated: At 5.1A per die with RDS(on)=50 mOhm, conduction loss per die is approximately 1.3W. With SO-8 theta_JA of approximately 50 C/W on 1 square inch of copper, junction rises ~65°C above ambient. For continuous dual-die operation, expand copper pour to at least 2 square inches to keep junction below 125°C in industrial environments.
Place the gate drive traces directly above or adjacent to the source pins to minimize gate-source loop inductance. Use a 10 Ohm gate resistor for switching frequencies between 100kHz and 1MHz. Keep the high-current drain-source loop area as small as possible to reduce EMI and voltage overshoot during switching transients.
Do not exceed VGS of ±20V absolute maximum; add a 12V Zener from gate to source if the gate driver can produce transients above this limit. Verify that the controller's dead-time setting prevents simultaneous conduction of the two MOSFETs in half-bridge configurations, or shoot-through can quickly destroy both die.
Информация о соответствии
RoHS compliant per PBF suffix designation. Consumer/industrial market qualification per datasheet - not AEC-Q100 qualified for automotive. Halogen-free status not specified in available datasheet materials.
