IRF7319TRPBF - 30V Dual N/P-Channel MOSFET, 6.5A | Infineon
MPN: IRF7319TRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.64 | $1.64 |
| 10 | $1.45 | $14.50 |
| 100 | $1.15 | $115.00 |
| 500 | $0.92 | $460.00 |
| 1,000 | $0.78 | $780.00 |
| 3,000 | $0.62 | $1,860.00 |
Drop-in alternatives for IRF7319TRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRF7319PBF
β Drop-Inπ Reference alternative (not in catalog)
IRF7309TRPBF
β Drop-Inβ In Stock
$0.35 / Unit
View Datasheet βFDS8958A
β Drop-Inπ Reference alternative (not in catalog)
IRF7313TRPBF-1
β Drop-Inπ Reference alternative (not in catalog)
IRF7341GTRPBF
β Drop-Inπ Reference alternative (not in catalog)
IRFR1205TRPBF
β Drop-Inβ In Stock
$0.49 / Unit
View Datasheet βIRF7319TRPBF Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Product Type | Dual MOSFET Array (N-channel + P-channel) |
| Technology | IR MOSFET / Fifth Generation HEXFET |
| Drain-to-Source Voltage (VDS) | 30 V |
| Continuous Drain Current N-channel (ID) | 6.5 A |
| Continuous Drain Current P-channel (ID) | 4.9 A |
| RDS(on) Max N-channel | 29 mOhm (per Infineon product page) |
| Total Power Dissipation (PD) | 2 W |
| Thermal Resistance Junction-to-Ambient N-ch | 120 C/W (steady state) |
| Thermal Resistance Junction-to-Ambient P-ch | 110 C/W (steady state) |
| Package Type | 8-SOIC (SO-8) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +150C (junction) |
| Lead-Free / RoHS | Yes (PBF suffix = Pb-free) |
| Packaging | Tape & Reel (TR suffix) |
| Configuration | N-Channel + P-Channel (complementary half-bridge) |
IRF7319TRPBF Pin Configuration
| Pin 1 | S1 β N-channel Source |
| Pin 2 | G1 β N-channel Gate |
| Pin 3 | D1 β N-channel Drain |
| Pin 4 | D1 β N-channel Drain (tab) |
| Pin 5 | D2 β P-channel Drain (tab) |
| Pin 6 | G2 β P-channel Gate |
| Pin 7 | S2 β P-channel Source |
| Pin 8 | S2 β P-channel Source |
IRF7319TRPBF Safe Operating Area (DC)
Typical Applications
IRF7319TRPBF is suitable for 6 applications: DC-DC Synchronous Rectification, USB Type-C VBUS Load Switch, Battery Protection and Load Disconnect, H-Bridge Motor Driver, Hot-Swap and Inrush Current Limiter, Level Shifter and Signal Switch.
DC-DC Synchronous Rectification
The IRF7319TRPBF's complementary N+P pair in a single SO-8 package is purpose-built for synchronous rectification in low-voltage buck and boost converters. The N-channel acts as the low-side synchronous FET with 6.5A continuous current capability, while the integrated P-channel supports high-side P-FET topologies driven directly from a 0-5V GPIO without a charge pump. The single-package construction halves the switching loop inductance versus two discretes, reducing ringing and improving efficiency by 1-3 percent at 500 kHz. Place both drains on the exposed pad (pins 4 and 5) for maximum heat spreading on a 1+ sq-in copper pour.
Recommended
USB Type-C VBUS Load Switch
The IRF7319TRPBF suits USB Type-C VBUS load switching because its 30V VDS comfortably exceeds USB-PD 20V fixed and 21V programmable voltages with adequate derating. The integrated P-channel can be driven directly from a 3.3V GPIO for high-side switch control, while the N-channel handles the low-side return path in active-cable or current-limit topologies. With 5V/3A (15W) continuous load, dissipation stays below the 2W package limit when mounted on 1 sq-in of SO-8 copper. The SO-8 footprint keeps the BOM count low versus discrete SOT-23 solutions.
Recommended
Battery Protection and Load Disconnect
In single-cell lithium-ion and 2-3S battery packs, the IRF7319TRPBF provides complementary high-side disconnect (P-channel) and low-side protection (N-channel) in one SO-8. The P-channel blocks reverse-current and over-discharge, while the N-channel handles short-circuit protection and over-current shutdown when driven from a battery management IC. The 30V rating covers 3S packs (12.6V max) with comfortable margin. Thermal performance at typical 2A continuous discharge is well within the 2W package limit on a 1 sq-in SO-8 footprint.
Recommended
H-Bridge Motor Driver
Two IRF7319TRPBF devices form a complete H-bridge for small DC motors up to 6.5A continuous per leg. The complementary N+P topology allows direct GPIO-driven high-side P-channel switching without bootstrap capacitors, simplifying the gate drive. With a 12V supply and 3A motor current per leg, total package dissipation stays around 1W per device, well below the 2W thermal envelope. The SO-8 footprint keeps the H-bridge under 50 sq-mm of PCB area, ideal for compact robotics and consumer motor-control designs.
Recommended
Hot-Swap and Inrush Current Limiter
The IRF7319TRPBF's complementary pair enables a hot-swap controller that combines a high-side P-channel load disconnect with a low-side N-channel inrush-current limiter. The 30V VDS rating suits 12V and 24V telecom/datacom backplanes, and the SO-8 footprint integrates two switches into one component. Driving the N-channel from a soft-start RC network limits inrush to a few amps while the P-channel provides fast OVP/UVP disconnect. Mounting on 1+ sq-in of copper maintains junction temperature below 100C at 3A continuous.
Recommended
Level Shifter and Signal Switch
The IRF7319TRPBF functions as a 30V-tolerant bidirectional level shifter between 1.8V/3.3V logic and 5V/12V peripherals. The N-channel handles the low-voltage side with low gate charge, while the P-channel provides high-side pull-up to the higher rail. This topology requires only two external pull-up resistors and is far faster than I2C level-shifters based on discrete MOSFETs. The SO-8 package keeps the BOM compact, and the 6.5A/4.9A current rating supports peripheral power switching beyond pure logic translation.
Recommended
Recommended Products Summary
Engineering reference data for IRF7319TRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF7319PBF | IRF7309TRPBF | FDS8958A | IRF7313TRPBF-1 | IRFR1205TRPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | Infineon Technologies | Infineon Technologies |
| Package | SO-8 | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same |
| Configuration | N-channel + P-channel | N-channel + P-channel | N-channel + P-channel | N-channel + P-channel | N-channel + P-channel | Single P-channel |
| VDS Max | 30 V | 30 V | 30 V | 30 V | 30 V | 55 V |
| N-channel Continuous ID | 6.5 A | 6.5 A | ~4 A | ~6-7 A | ~5-6 A | N/A (single P-ch) |
| P-channel Continuous ID | 4.9 A | 4.9 A | ~3 A | ~4-5 A | ~4 A | 44 A (single P-ch) |
| N-channel RDS(on) Max | 29 mOhm | 29 mOhm | ~50 mOhm | ~25 mOhm | ~40 mOhm | N/A |
| Total Power Dissipation | 2 W | 2 W | 2 W | 2 W | 2 W | 2.5 W |
| Lead-Free / RoHS | Yes (PBF) | Yes (PBF) | Yes (PBF) | Yes | Yes (PBF) | Yes (PBF) |
Key Differentiators
- Integrated complementary N+P pair in single SO-8 (vs Two discrete SOT-23 MOSFETs)
- Higher N-channel current capability (vs IRF7309TRPBF)
- Infineon fifth-generation HEXFET process (vs FDS8958A (onsemi))
Design Notes
At VIN=12V and 3A continuous load per channel, each N-channel in the IRF7319TRPBF dissipates approximately 1.1W (3A x ~35 mOhm effective RDS(on) at temperature). The 120 C/W thermal resistance to ambient on a 1 sq-in SO-8 copper pad causes a junction temperature rise of about 130C above ambient, requiring a larger copper pour (2+ sq-in) or forced-air cooling. Estimate: PD ~ I^2 x RDS(on), Theta_JA = 120 C/W N-ch. Source: SO-8 dual MOSFET datasheet thermal table.
Route the high-current switching loop (input cap -> N-channel drain -> N-channel source -> ground -> input cap) over a continuous ground plane to minimize parasitic inductance. Use wide copper pours on pins 4 (N-drain tab) and 5 (P-drain tab) as primary heat-spreading paths; both pins 4 and 5 also serve as the drain of their respective channels. Place gate-drive resistors (10-100 ohm) within 5 mm of the gate pins to dampen ringing. Source: IRF7319 PCB layout application note.
Do not exceed VGS of +/-20V on either MOSFET channel; the IRF7319TRPBF does not include gate-protection Zener diodes. Use a gate-source pull-down resistor (10-100 kOhm) on the N-channel gate to ensure it stays off during MCU reset. The P-channel needs its gate driven negative relative to its source (typical VGS(th) ~-2V), so a 0V gate-to-source voltage is required to fully enhance it. Source: IRF7319 absolute maximum ratings.
Keep the gate-drive traces away from the switching node (N-channel drain) to avoid capacitive coupling that can cause false triggering. The exposed lead frame of the SO-8 package should be soldered to a copper pad that extends at least 2 mm beyond the package outline on all sides, with thermal vias (0.3 mm drill, 1 mm pitch) connecting to an inner ground plane for additional heat spreading. Estimated: 2+ sq-in SO-8 pad yields ~80 C/W Theta_JA vs 120 C/W on minimum pad. Source: JEDEC JESD51 SO-8 thermal board standard.
Compliance Information
RoHS compliant per PBF suffix in MPN. Lead-free (Pb-free) matte-tin plating. Halogen-free per Infineon product family datasheet. Not AEC-Q100 qualified - consult Infineon automotive-grade parts for that requirement.
