IRF7815TRPBF - 150V N-Ch HEXFET MOSFET 5.1A | Infineon
Артикул: IRF7815TRPBF ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $0.85 | $0,85 |
| 10 | $0.75 | $7,50 |
| 100 | $0.62 | $62,00 |
| 500 | $0.51 | $255,00 |
| 1.000 | $0.42 | $420,00 |
| 3.000 | $0.36 | $1.080,00 |
IRF7815TRPBF Обзор
A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate to modulate current flow between its drain and source terminals. HEXFET is Infineon's trade name for its planar power-MOSFET cell architecture; within the broader taxonomy, HEXFET MOSFETs belong to the discrete power MOSFET family, which sits under transistors, FETs, and the wider discrete semiconductor category used in power management. Compared with bipolar transistors, MOSFETs switch faster, require essentially no DC gate current, and integrate easily into high-frequency switch-mode power supply (SMPS) topologies.
Key specifications include a 150V drain-to-source breakdown voltage, 43 mOhm maximum Rds(on) at Vgs=10V, 25 nC typical total gate charge, and 2.5W maximum power dissipation on the SO-8 PCB footprint. The part also features low gate charge for reduced driver losses, an avalanche-rated body diode, and a logic-compatible gate threshold suitable for 10V standard gate-drive rails. Its 8-pin SO-8 package allows compact layout for point-of-load converters where PCB area is constrained.
Architecturally, the IRF7815 uses a strip-cell planar DMOS design that balances low on-resistance with robust avalanche energy. The IR MOSFET process delivers a tight Rds(on) distribution and strong dynamic performance at 100 kHz to 1 MHz switching frequencies commonly seen in modern VRM and telecom DC-DC bricks. Compared with trench-generation devices, this planar technology typically provides a more rugged body diode, which simplifies synchronous-rectifier dead-time control.
Typical applications include synchronous rectification in isolated telecom DC-DC converters, high-side and low-side switches in notebook CPU buck regulators, POL converters for networking ASICs, and 48V bus point-of-load conversion in industrial equipment. The 150V rating also makes it suitable for 24V/36V industrial and telecom intermediate bus architectures.
When designing with this MOSFET, ensure the SO-8 copper pad area delivers a junction-to-ambient thermal resistance that keeps the die within safe temperature limits at full load. Use a gate-driver capable of pulling the gate to at least 10V to achieve the rated Rds(on), and include a small gate-source resistor to suppress ringing.
This page synthesizes distributor pricing, drop-in same-package alternatives, and practical design notes not found in the manufacturer datasheet alone.
Аналоги без доработки для IRF7815TRPBF — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с IRF7815TRPBF (тот же форм-фактор и посадочное место) — отличается по Operating Temperature Range, Technology, Package, Avalanche Rated, FET Type.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IRF7855TRPBF
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRF7853TRPBF
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRFR3411TRPBF
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$0.55 / шт.
Открыть даташит →IRFR4615TRLPBF
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$0.39 / шт.
Открыть даташит →NTB30N06L
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
Si4840DY
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRF7815TRPBF Максимальные параметры и электрические характеристики
| FET Type | N-Channel MOSFET |
| Technology | IR MOSFET (HEXFET) |
| Drain-to-Source Voltage (Vdss) | 150 V |
| Continuous Drain Current (Id) at Ta=25C | 5.1 A |
| Rds(on) Max at Vgs=10V | 43 mOhm |
| Gate Threshold Voltage (Vgs(th)) Typ | 3.0 V |
| Total Gate Charge (Qg) Typ | 25 nC |
| Maximum Power Dissipation (Ta=25C) | 2.5 W |
| Диапазон рабочих температур | -55C to +150C (Tj) |
| Корпус | SO-8 (8-SO) |
| Тип монтажа | Surface Mount |
| Уровень MSL | 1 |
| Статус RoHS | Compliant (Pb-free) |
| Lead-Free | Yes |
| Configuration | Single |
| Avalanche Rated | Yes |
Конфигурация выводов IRF7815TRPBF
| Контакт 1 | Source — Source terminal (pins 1-3 internally bonded) |
| Контакт 2 | Source — Source terminal (pins 1-3 internally bonded) |
| Контакт 3 | Source — Source terminal (pins 1-3 internally bonded) |
| Контакт 4 | Gate — Gate drive input |
| Контакт 5 | Drain — Drain terminal (pins 5-8 internally bonded) |
| Контакт 6 | Drain — Drain terminal (pins 5-8 internally bonded) |
| Контакт 7 | Drain — Drain terminal (pins 5-8 internally bonded) |
| Контакт 8 | Drain — Drain terminal (pins 5-8 internally bonded) |
Область безопасной работы (DC)
Типичное применение
IRF7815TRPBF подходит для 7 применениеs: Synchronous Rectifier in Isolated Telecom DC-DC Converters, Notebook CPU Multi-Phase VRM Buck Regulator, 48V Industrial Bus Point-of-Load Conversion, LED Driver Power Stage, Solar Inverter Auxiliary Power Supply, Automotive 12V/24V Load Switching and Motor Drive, Battery Management System Protection Switch.
Synchronous Rectifier in Isolated Telecom DC-DC Converters
The IRF7815TRPBF is a strong fit as the secondary-side synchronous rectifier in isolated telecom DC-DC converters. Its 150V Vdss provides sufficient avalanche margin to absorb the reflected voltage spike from the transformer's leakage inductance when used on a 48V nominal bus. The 43 mOhm Rds(on) and 25 nC total gate charge minimize both conduction loss and driver loss, which is critical in brick converters running at 200 kHz to 500 kHz where efficiency targets exceed 92%. Placed across the secondary winding as the low-side FET, the IRF7815TRPBF drives the output inductor and replaces lossy Schottky diodes, yielding a 3-5% efficiency gain.
Рекомендуется
Notebook CPU Multi-Phase VRM Buck Regulator
In multi-phase VRM topologies powering notebook CPUs, the IRF7815TRPBF serves as either the high-side control FET or the low-side synchronous rectifier in each phase. The 150V Vdss comfortably handles 19V battery inputs up to 25V transients, while 43 mOhm Rds(on) keeps conduction loss manageable. Its low 25 nC gate charge allows the gate driver to switch the FET efficiently at 300 kHz to 1 MHz, which is essential for shrinking output inductors. Compared with trench MOSFETs, the IRF7815TRPBF's planar HEXFET body diode is more rugged, simplifying dead-time control in the controller.
Рекомендуется
48V Industrial Bus Point-of-Load Conversion
The IRF7815TRPBF suits 48V industrial intermediate bus point-of-load converters that step down to 12V, 5V, or 3.3V rails for downstream ASICs and FPGAs. Its 150V Vdss provides three times the operating voltage as headroom against input transients common on factory-bus environments. At 5.1A continuous drain current, the IRF7815TRPBF can deliver up to 60W of output power in a non-isolated buck topology, while the SO-8 footprint keeps the converter compact. The 43 mOhm Rds(on) results in roughly 2% conduction loss at full load, supporting high-efficiency designs without exotic cooling.
Рекомендуется
LED Driver Power Stage
For high-brightness LED drivers operating from 24V to 48V bus voltages, the IRF7815TRPBF can be used as the main switching element in buck or boost converter topologies. The 150V rating handles boost-derived rails up to 100V comfortably for high-string-count LED arrays, while the 43 mOhm Rds(on) keeps thermal dissipation manageable at typical LED currents of 2A to 4A. Its fast switching capability supports PWM dimming frequencies above 1 kHz without audible artifacts, which is essential for flicker-free architectural and stage lighting applications.
Рекомендуется
Solar Inverter Auxiliary Power Supply
In solar inverter systems, the IRF7815TRPBF can serve in the auxiliary power supply that generates control rails from the high-voltage DC bus. The 150V Vdss rating is well-matched to the 100V to 120V nominal solar string voltage, providing margin for open-circuit transients. With 5.1A continuous capability, it can drive flyback or forward converter topologies supplying 20W to 50W of isolated auxiliary power for gate drivers and control logic. The HEXFET technology's avalanche-rated body diode simplifies snubber design in the discontinuous-mode flyback.
Рекомендуется
Automotive 12V/24V Load Switching and Motor Drive
Although not AEC-Q100 qualified, the IRF7815TRPBF can be used in non-safety automotive subsystems such as infotainment, lighting, and accessory motor drives. Its 150V Vdss far exceeds the 24V truck electrical system transients, while 5.1A continuous current handles small motors and solenoids. The HEXFET technology's planar body diode tolerates the inductive kickback of relay coils and small DC motors when used with a freewheeling clamp. Designers should add TVS protection and verify automotive-grade requirements separately for safety-critical systems.
Рекомендуется
Battery Management System Protection Switch
The IRF7815TRPBF can function as a low-side protection switch in multi-cell battery management systems where it disconnects the load during fault conditions. Its 150V Vdss accommodates stacked battery configurations up to 100V total, while the 5.1A continuous rating suits e-bike, power tool, and small UPS battery packs. The low 43 mOhm Rds(on) keeps voltage drop below 100mV at typical 2A discharge currents, preserving battery runtime. The HEXFET avalanche rating absorbs the inductive kickback of the load when the FET turns off abruptly during fault events.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IRF7815TRPBF — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IRF7855TRPBF | IRF7853TRPBF | IRFR3411TRPBF | IRFR4615TRLPBF | NTB30N06L | Si4840DY |
|---|---|---|---|---|---|---|---|
| Package | SO-8 | SO-8 | SO-8 | SO-8 | SO-8 | SO-8 | SO-8 |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | Vishay Intertechnology |
| Drain-to-Source Voltage (Vdss) | 150 V | 60 V | 100 V | 100 V | 100 V | 60 V | 40 V |
| Continuous Drain Current (Id) at 25C | 5.1 A | 12 A | 8 A | 20 A | 30 A | 30 A | 25 A |
| Rds(on) Max at Vgs=10V | 43 mOhm | 25 mOhm | 33 mOhm | 50 mOhm | 30 mOhm | 35 mOhm | 10 mOhm |
| Total Gate Charge (Qg) Typ | 25 nC | 30 nC | 20 nC | 36 nC | 40 nC | 20 nC | 32 nC |
| Technology | HEXFET (IR MOSFET) | HEXFET (IR MOSFET) | HEXFET (IR MOSFET) | HEXFET (IR MOSFET) | HEXFET (IR MOSFET) | Trench MOSFET | TrenchFET (Vishay) |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
Ключевые отличия
- Higher Vdss rating than IRF7855TRPBF in same SO-8 footprint (против IRF7855TRPBF)
- Higher Vdss than IRF7853TRPBF with comparable Rds(on) (против IRF7853TRPBF)
- Cross-brand drop-in compatibility with onsemi NTB30N06L (против NTB30N06L)
Заметки по проектированию
At full 5.1A load with 43 mOhm Rds(on), the IRF7815TRPBF dissipates approximately 1.1W as conduction loss alone. Estimated: assuming Pd = Id^2 * Rds(on) at maximum rated current. The SO-8 package requires a 1-inch-square (645 mm^2) copper pour on the drain pads to achieve the datasheet's thermal resistance of approximately 50 C/W. Without proper copper heatsinking, the junction temperature will exceed 150C and trigger thermal shutdown. For continuous high-current operation, keep junction rise below 75C by increasing the drain copper area or adding a small heatsink.
For SO-8 power MOSFETs, the drain pins (5-8) should be soldered to a contiguous copper pour that serves as both electrical connection and thermal dissipation path. Source pins (1-3) and gate pin (4) should be routed with short traces to minimize gate-loop inductance. Place the gate-drive resistor (typically 10 ohms) within 5mm of pin 4 to suppress parasitic ringing during fast switching edges. Recommended PCB: 2-oz copper on the drain layer for high-current designs above 3A continuous.
Do not exceed Vgs of +/-20V absolute maximum or the gate oxide will be damaged. Always discharge the gate-source capacitance before handling the device to prevent ESD-induced failure. In synchronous rectifier applications, ensure the dead-time control prevents cross-conduction; the IRF7815TRPBF's body diode reverse recovery is acceptable but not optimal for hard-switching topologies. For switching frequencies above 500 kHz, verify the gate driver's sink current capability against the 25 nC gate charge at the target switching frequency to avoid incomplete gate transitions.
Информация о соответствии
RoHS compliant per manufacturer datasheet and PartGenie entry. REACH status not explicitly stated in available data. Not AEC-Q100 qualified - for automotive applications, choose an AEC-Q100 qualified alternative such as Infineon's automotive-grade HEXFET family.
