IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon
Артикул: IRFR4615TRLPBF ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $0.79 | $0,79 |
| 10 | $0.72 | $7,20 |
| 100 | $0.58 | $58,00 |
| 500 | $0.46 | $230,00 |
| 1.000 | $0.39 | $390,00 |
IRFR4615TRLPBF Обзор
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently switch high currents at high frequencies. The N-channel enhancement-mode MOSFET works by applying a positive gate-source voltage to create a conductive channel between drain and source. Power MOSFETs sit at the bottom of the power-conversion hierarchy: switching converter -> synchronous rectifier -> power MOSFET -> discrete semiconductor, and are essential building blocks in modern switch-mode power supplies, motor drives, and DC-DC converters.
Key features of the IRFR4615TRLPBF include: low RDS(on) of 42 mOhm max at VGS = 10V, low total gate charge Qg of 26 nC for reduced switching losses, 150V drain-source breakdown voltage for 24V-48V bus applications, integrated body diode for synchronous rectification, and an avalanche-energy rating of 109 mJ for ruggedness against inductive transients. The DPAK (TO-252) package provides a low thermal resistance path and is compatible with automated surface-mount assembly.
The IRFR4615 uses Infineon's proprietary IR MOSFET cell design that combines a planar DMOS structure with optimized die geometry to balance conduction and switching losses. The 26 nC gate charge at 10V VGS enables operation at moderate switching frequencies (50-200 kHz) with minimal driver losses, while the 109 mJ avalanche rating ensures robust performance in unclamped inductive switching environments such as solenoid and motor-driver applications.
Typical applications include secondary-side synchronous rectification in 24V-48V SMPS, DC-DC converter high-side/low-side switches, battery management system (BMS) protection circuits, low-voltage motor drivers, and load switches in industrial automation. The part is also commonly used as a freewheeling or blocking switch in audio amplifiers and UPS systems.
When designing with this device, ensure that the gate driver can supply at least 10V VGS for full enhancement and that the PCB copper pour under the DPAK tab is sized to handle the steady-state dissipation. A 10 Ohm gate resistor is recommended to suppress ringing and limit dv/dt-induced turn-on. For thermal reliability, target a junction-to-ambient thermal design that keeps Tj below 125C under worst-case load.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Аналоги без доработки для IRFR4615TRLPBF — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с IRFR4615TRLPBF (тот же форм-фактор и посадочное место) — отличается по Technology, Package, Operating Temperature Range, Drain-Source Voltage (VDS), Mounting Type.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IRFR4615TRPBF
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRFR4615TRLPBF-EL
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRFR3411TRPBF
✅ Прямая замена✓ В наличии
$0.55 / шт.
Открыть даташит →VBE1154N
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRF150P220AKMA1
✅ Прямая замена✓ В наличии
$3.55 / шт.
Открыть даташит →IRFR4615TRLPBF Максимальные параметры и электрические характеристики
| Technology | IR MOSFET (N-Channel Enhancement Mode) |
| Drain-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID) at TC=25C | 33 A |
| On-Resistance RDS(on) max at VGS=10V | 42 mOhm |
| Total Gate Charge (Qg) | 26 nC |
| Power Dissipation (PD) at TC=25C | 144 W |
| Avalanche Energy (EAS) | 109 mJ |
| Диапазон рабочих температур | -55C to +175C |
| Корпус | TO-252AA (DPAK) |
| Тип монтажа | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix indicates Pb-free) |
| Энергия одиночного лавинного импульса | 109 mJ |
Конфигурация выводов IRFR4615TRLPBF
| Контакт 1 | Gate — MOSFET gate drive input |
| Контакт 2 | Drain — MOSFET drain; electrically connected to the metal tab |
| Контакт 3 | Source — MOSFET source connection |
Область безопасной работы (DC)
Типичное применение
IRFR4615TRLPBF подходит для 6 применениеs: Secondary-Side Synchronous Rectification in SMPS, Industrial DC-DC Converter High-Side Switch, Battery Management System (BMS) Protection Switch, Low-Voltage Motor Drive H-Bridge, Uninterruptible Power Supply (UPS) Switch, Automotive 48V Mild-Hybrid Load Switch.
Secondary-Side Synchronous Rectification in SMPS
The IRFR4615TRLPBF is ideally suited for secondary-side synchronous rectification in 24V-48V switch-mode power supplies. With 150V VDS, 33A ID, and 42 mOhm max RDS(on) at VGS=10V, it drops less than 1.5V at full load - far lower than a Schottky diode - and the 26 nC total gate charge keeps switching losses minimal at 100-200 kHz. In a typical 48V-to-5V forward converter or LLC stage, two IRFR4615TRLPBF devices replace the output rectifier pair, raising efficiency from the low-90% range into the mid- to high-90% range. The 109 mJ avalanche rating provides ruggedness against the secondary-side ringing that often occurs during dead-time transitions.
Рекомендуется
Industrial DC-DC Converter High-Side Switch
In industrial 24V-48V buck and buck-boost converters, the IRFR4615TRLPBF serves as the high-side or low-side switching element. Its 150V breakdown comfortably exceeds the 48V nominal bus plus transient spikes up to 80V, providing ample margin for automotive and industrial load-dump conditions. The TO-252 (DPAK) package's exposed tab allows direct PCB copper heatsinking for continuous currents of 5-10A without active cooling. With 33A pulsed capability, the part handles repetitive transient loads such as motor inrush and solenoid activation. The 42 mOhm RDS(on) keeps conduction losses low, making it suitable for efficiency-critical telecom and server power rails.
Рекомендуется
Battery Management System (BMS) Protection Switch
The IRFR4615TRLPBF is widely used as a load-disconnect and charge-protection switch in 24V-48V battery management systems including e-scooters, light EVs, and telecom backup batteries. Its 150V VDS rating supports multi-cell lithium packs with high transient voltages during switching events. The 33A continuous current rating handles the full discharge current of mid-sized battery packs, while the 42 mOhm on-resistance minimizes voltage drop across the protection switch. The DPAK package's thermal mass provides short-time overload handling for inrush events such as motor starts. Per Infineon's datasheet, the part's avalanche rating of 109 mJ ensures ruggedness against the inductive kick from battery cabling.
Рекомендуется
Low-Voltage Motor Drive H-Bridge
The IRFR4615TRLPBF works well as the switching element in 24V-48V brushed DC motor H-bridge drives used in robotics, small EVs, and industrial automation. With 33A continuous current, the part handles fractional-horsepower motors up to roughly 500W continuous without paralleling. The 150V breakdown provides ample headroom for the back-EMF spikes generated when the motor is switched off under load. The 26 nC Qg allows the H-bridge to operate at PWM frequencies up to 50 kHz for smooth torque control. The 109 mJ single-pulse avalanche energy rating is a key benefit for motor-drive applications where inductive switching transients are routine.
Рекомендуется
Uninterruptible Power Supply (UPS) Switch
In line-interactive and online UPS systems operating from 24V-48V battery banks, the IRFR4615TRLPBF serves as the inverter switching device and battery disconnect switch. Its 150V VDS provides sufficient margin for the battery bus plus inverter transients, while the 33A continuous rating supports UPS systems in the 1-2 kVA range. The low 42 mOhm on-resistance minimizes conduction losses during battery discharge, extending runtime. The DPAK package simplifies thermal management - mounting the tab to a small copper heatsink or large PCB copper pour is sufficient for typical UPS thermal envelopes. The avalanche energy rating adds robustness against the inductive kick from inverter transformers.
Рекомендуется
Automotive 48V Mild-Hybrid Load Switch
The IRFR4615TRLPBF is well-matched to 48V mild-hybrid automotive applications such as electric power steering, active suspension valves, and auxiliary load switching. The 150V VDS comfortably exceeds the 48V bus plus load-dump transients, and the -55C to +175C operating junction temperature range handles under-hood thermal environments. The 33A continuous current supports high-current actuators and PTC heater loads. While not AEC-Q101 qualified, it is used in non-safety automotive subsystems and industrial truck applications. The TO-252 DPAK package is widely accepted in automotive PCB assembly lines, simplifying manufacturing.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IRFR4615TRLPBF — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IRFR4615TRPBF | IRFR4615TRLPBF-EL | IRFR3411TRPBF | VBE1154N | IRF150P220AKMA1 |
|---|---|---|---|---|---|---|
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | VBsemi | Infineon |
| VDS (Drain-Source Voltage) | 150 V | 150 V | 150 V | 100 V | 150 V | 200 V |
Ключевые отличия
- 150V VDS with 33A ID in DPAK (против IRFR3411TRPBF)
- Lower RDS(on) cross-brand alternative available (против VBE1154N (VBsemi))
- Synchronous-rectifier optimized gate charge (против IRF150P220AKMA1)
- Avalanche-rated for inductive switching (против IRFR3411TRPBF)
Заметки по проектированию
Estimated: At 33A continuous drain current and 42 mOhm RDS(on), the IRFR4615TRLPBF dissipates approximately 45.6W at full load. The DPAK package with minimal copper (1 sq inch 2oz) has theta_JA of approximately 50 C/W, causing a junction temperature rise of 2280C - well above the 175C limit. To use the part at continuous currents above 5A, attach the tab to at least 3-4 sq inches of 2oz copper pour, or use an external heatsink. The 144W power dissipation rating only applies at TC=25C with infinite heatsink; realistic PCB designs must derate significantly.
Solder the DPAK tab directly to a PCB copper pour with thermal vias to the opposite-side copper or internal ground plane. Place the gate drive resistor (typically 10-22 Ohm) as close to the gate pin as possible to minimize parasitic inductance and prevent gate ringing. Keep the gate-trace away from the drain node to minimize Miller coupling. For high-frequency switching above 100 kHz, use a Kelvin-source connection by routing the source sense through a separate trace to the driver ground reference.
Do not exceed VGS of +/- 20V absolute maximum - the gate oxide will rupture. Ensure the gate driver pulls the IRFR4615TRLPBF fully on (VGS >= 10V) for the rated RDS(on); partial enhancement at 4-5V VGS dramatically increases conduction losses. Avoid operating near the SOA boundary with high VDS and high ID simultaneously - refer to the datasheet SOA curve. The avalanche energy rating (109 mJ) is a single-pulse rating; repetitive avalanche events will overheat the die.
Use a minimum 2oz copper pour under the DPAK tab to spread heat from the die. Add an array of thermal vias (typically 9-16 vias, 0.3mm drill) directly under the tab to conduct heat to inner copper planes. Place the input bulk capacitor and bootstrap capacitor close to the IC to minimize high-current loop inductance. For high-current applications, use wide top-side copper traces (>= 5mm) on drain and source paths to handle 33A continuous current without significant trace heating.
Информация о соответствии
PBF suffix indicates Pb-free / RoHS compliant per Infineon. Not AEC-Q100/101 qualified - automotive safety applications should use AEC-Q100 qualified alternatives. REACH compliance per Infineon product declaration.
