IRFR2405TRLPBF - 55V 56A N-Ch HEXFET MOSFET DPAK | Infineon
Артикул: IRFR2405TRLPBF ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $1.18 | $1,18 |
| 10 | $1.02 | $10,20 |
| 100 | $0.86 | $86,00 |
| 500 | $0.74 | $370,00 |
| 1.000 | $0.63 | $630,00 |
| 3.000 | $0.55 | $1.650,00 |
IRFR2405TRLPBF Обзор
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used for switching and amplifying electronic signals in power conversion applications. N-channel MOSFETs conduct when a positive gate-source voltage is applied, and within the broader taxonomy they belong to power management semiconductors that include IGBTs, voltage regulators, gate drivers, and DC-DC converters. They sit at the heart of switching power supplies, motor drives, and load switches where high efficiency and fast switching are required.
Key features include an exceptionally low on-resistance per silicon area of 16 mOhm maximum at VGS = 10V, fast switching speed thanks to low gate charge, and ruggedized device design that HEXFET power MOSFETs are known for. The IRFR2405TRLPBF is rated for avalanche operation, providing energy handling capability for inductive switching events commonly encountered in motor control and relay-replacement circuits.
Internally the device uses an advanced planar cell structure with a vertical DMOS architecture, integrating the body diode that allows half-bridge and synchronous-free topologies. The DPAK package offers a low thermal resistance path that, combined with the low RDS(on), keeps conduction losses low at high currents.
Typical applications include DC motor drives, solenoid and relay drivers, power load switches, battery management, synchronous rectifier secondary-side switches, and high-current buck converter low-side switches in industrial, automotive, and renewable energy systems.
A critical design consideration is the SOA: at high VDS and high duty-cycle operation, transient thermal behavior must be validated with the datasheet SOA curves to avoid exceeding junction temperature limits.
This page synthesizes distributor pricing as of 2026-09-13, drop-in DPAK alternatives, and practical design notes not aggregated in the manufacturer datasheet.
Аналоги без доработки для IRFR2405TRLPBF — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с IRFR2405TRLPBF (тот же форм-фактор и посадочное место) — отличается по Technology, Operating Temperature Range, Package, Drain-Source Voltage (VDS), Total Gate Charge (Qg).
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IRFR2405TRPBF
✅ Прямая замена✓ В наличии
$0.61 / шт.
Открыть даташит →AUIRFR2405TR
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRFR3711ZPBF
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRFR2905ZPBF
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRFR1010ZPBF
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
SUM55N06-16P-E3
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
NTD6416AN-1G
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRFR2405TRLPBF Максимальные параметры и электрические характеристики
| Тип транзистора | N-Channel MOSFET |
| Technology | HEXFET (IR MOSFET, 7th generation) |
| Drain-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) at Tc | 56 A |
| Pulsed Drain Current (IDM) | 200 A (typical, per datasheet family) |
| On-Resistance RDS(on) max @ VGS=10V | 16 mOhm |
| Gate Charge (Qg) typical | 70 nC |
| Power Dissipation (PD) at Tc | 110 W |
| Gate-Source Voltage (VGS) max | ±20 V |
| Диапазон рабочих температур | -55 C to +175 C (junction) |
| Корпус | TO-252AA (DPAK), 3-pin (2 + Tab) |
| Тип монтажа | Surface Mount |
| Avalanche Energy Rated | Yes (HEXFET ruggedized design) |
| Lead-Free / RoHS | Yes, PBF suffix indicates lead-free and RoHS compliant |
| Packaging | Tape & Reel (TR) |
Конфигурация выводов IRFR2405TRLPBF
| Контакт 1 | Gate — Gate control input; positive VGS turns the device on |
| Контакт 2 | Drain — Power drain terminal; electrically and thermally connected to the tab |
| Контакт 3 | Source — Source terminal; return path for gate drive and load current |
| Контакт TAB | Drain (Tab) — Metal tab electrically connected to Drain; serves as primary thermal path to PCB copper |
IRFR2405 Область безопасной работы
Типичное применение
IRFR2405TRLPBF подходит для 6 применениеs: Brushed DC Motor Drive (H-Bridge), Solenoid and Relay Driver, Battery Management and Load Switch, Synchronous Rectifier in Secondary Side, Power Load Switch (Hot Swap), Uninterruptible Power Supply (UPS) Output Stage.
Brushed DC Motor Drive (H-Bridge)
The IRFR2405TRLPBF suits low-side switching positions in 12V/24V brushed DC motor H-bridges, where its 16 mOhm RDS(on) keeps conduction losses below 5W at 15A continuous, while 200A pulsed rating handles motor inrush. The 55V VDS provides ample headroom for 24V bus transients. In a typical 20kHz PWM loop, low 70 nC Qg allows direct TTL-level gate drive without bootstrap pumps, simplifying the design.
Рекомендуется
Solenoid and Relay Driver
For 12V/24V automotive solenoids and relay-replacement circuits, the IRFR2405TRLPBF provides avalanche-rated switching that absorbs inductive kickback without external TVS clamps. The 110W dissipation rating at Tc supports steady-state currents up to 56A in continuous solenoid hold applications. Pair the device with a flyback diode and gate resistor of 10-100 ohm for clean switching.
Рекомендуется
Battery Management and Load Switch
In lithium battery packs and UPS systems, the IRFR2405TRLPBF acts as a low-loss load disconnect switch. At 30A continuous load on a 24V rail, the 16 mOhm RDS(on) drops only 0.48V across the device, dissipating 14.4W manageable with minimal heatsinking. The 175 C maximum junction temperature supports hot environments, and PBF marking ensures RoHS compliance for portable battery products.
Рекомендуется
Synchronous Rectifier in Secondary Side
On the secondary side of isolated DC-DC converters, the IRFR2405TRLPBF can replace Schottky diodes to gain 0.5-1% efficiency. Its low Qg of 70 nC and fast body diode recovery suit 100-300 kHz switching frequencies. The 55V rating handles 24V outputs with margin, and the DPAK footprint supports compact SMD layouts in point-of-load converters.
Рекомендуется
Power Load Switch (Hot Swap)
The IRFR2405TRLPBF works as a hot-swap controller pass element for plug-in cards and industrial modules. During card insertion, the MOSFET limits inrush by operating in linear region; once fully enhanced, the 16 mOhm RDS(on) carries full load with minimal loss. The 56A continuous rating exceeds typical 12V/10A hot-swap requirements, providing 5x design margin.
Рекомендуется
Uninterruptible Power Supply (UPS) Output Stage
In offline UPS and inverter outputs, the IRFR2405TRLPBF drives low-frequency 50/60 Hz square-wave inverter stages or high-frequency PWM stages. Its rugged avalanche capability absorbs reverse energy from inductive transformer windings, while 110W power dissipation supports continuous 56A operation with proper heatsinking. The DPAK package allows dense PCB layouts in space-constrained UPS modules.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IRFR2405TRLPBF — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IRFR2405TRPBF | AUIRFR2405TR | IRFR3711ZPBF | SUM55N06-16P-E3 | NTD6416AN-1G |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Vishay Intertechnology | onsemi |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| VDS (Drain-Source Voltage) | 55 V | 55 V | 55 V | 100 V | 60 V | 100 V |
| Continuous Drain Current (Tc) | 56 A | 56 A | 56 A | 42 A | 55 A | 17 A |
| RDS(on) max @ VGS=10V | 16 mOhm | 16 mOhm | 16 mOhm | 6 mOhm | 16 mOhm | 70 mOhm |
| Power Dissipation (Tc) | 110 W | 110 W | 110 W | 79 W | 107 W | 55 W |
| Automotive Qualified (AEC-Q101) | No (commercial) | No | Yes (AEC-Q101) | No | No | No |
| Approx. Unit Price (qty 1, USD) | 1.18 | 0.95 | 1.85 | 1.45 | 1.05 | 0.85 |
Ключевые отличия
- Proven seventh-generation HEXFET silicon in DPAK (против AUIRFR2405TR)
- Higher voltage headroom than IRFR2405 family default (против IRFR3711ZPBF)
- Cross-brand pin-compatibility enables second sourcing (против SUM55N06-16P-E3)
Заметки по проектированию
Estimated: at 30A continuous load on a DPAK mounted to 1 oz copper with 1 square inch of pour, the IRFR2405TRLPBF dissipates approximately 14.4W (30A^2 * 16 mOhm). With DPAK junction-to-ambient thermal resistance of approximately 50 C/W on minimal copper, junction rise would be 720 C - clearly impossible. Practical mounting requires at least 4-6 square inches of copper, or a small clip-on heatsink for continuous 30A+ operation. Always consult the datasheet SOA curve for your specific VDS/ID operating point before relying on a heatsink-free design.
The DPAK thermal pad must be soldered to a copper pour that serves as both electrical drain contact and thermal dissipation path. Use thermal vias (typically 0.3mm diameter, 6-9 vias in a 3x3 array) under the tab to conduct heat to inner PCB copper layers. Maintain at least 5mm clearance between the drain pad and any signal trace routed on the same layer to prevent high-voltage arcing under fault conditions.
The IRFR2405TRLPBF gate is rated at +/-20V VGS maximum. Exceeding this - even briefly during switching transients from inductive loads - can permanently damage the gate oxide. Add a 10k-100k resistor from gate to source to ensure the device stays off when the gate driver is floating, and add a Zener clamp (15V) from gate to source for protection against VDS-to-VGS coupling transients in half-bridge topologies.
Keep the gate drive loop (gate-driver output -> gate -> source -> gate-driver ground return) as small as possible - ideally under 1 square cm of loop area - to minimize parasitic inductance that causes gate ringing and false triggering. Place the gate drive resistor (typically 10-100 ohm) close to the MOSFET gate pin, not at the driver output, to dampen the LC tank formed by trace inductance and MOSFET input capacitance (Ciss).
Информация о соответствии
PBF suffix denotes lead-free plating and RoHS compliance per Infineon product marking. Commercial grade only; for AEC-Q101 automotive qualification, select AUIRFR2405 variant. REACH compliance inferred from manufacturer declaration.
