K6X1008C2D-GF70 - 1Mbit 70ns 32-SOP Low Power SRAM | Samsung
Артикул: K6X1008C2D-GF70 ✗ Снят с производства| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $2.45 | $2,45 |
| 10 | $2.1 | $21,00 |
| 100 | $1.75 | $175,00 |
| 500 | $1.5 | $750,00 |
| 1.000 | $1.3 | $1.300,00 |
K6X1008C2D-GF70 Обзор
A static RAM (SRAM) is a type of volatile memory that stores each bit in a six-transistor (6T) latch cell, retaining data as long as power is applied without refresh cycles. SRAM occupies the top tier of memory speed in the storage hierarchy (register -> cache -> SRAM -> DRAM -> NAND flash), making it the preferred choice when deterministic, low-latency read/write access is required. The "low-power CMOS" designation places the K6X1008C2D family in the sub-category of asynchronous SRAMs optimized for battery-backed and standby-sensitive applications, sitting between high-speed cache SRAM and DRAM in both cost and density.
Key features of the K6X1008C2D-GF70 include 70 ns access time, low data-retention current at 2 V for backup, full CMOS six-transistor memory cell, three-state bidirectional I/O, and a Chip Enable (CE) pin for power gating. The device supports both commercial and industrial operating temperature ranges, and a wide range of package options including 32-SOP, 32-TSOP, and 28-DIP. The simple, asynchronous interface requires no clock or refresh controller, allowing direct connection to a microcontroller bus or address/data latch with minimal glue logic.
Typical applications for the K6X1008C2D-GF70 include embedded firmware buffering, industrial controller parameter storage, point-of-sale terminals, portable data loggers, and battery-backed configuration memory. The 32-SOP footprint is the most common of the family and is widely used in industrial and consumer designs where moderate density and low standby power are required.
When designing with this part, ensure VCC decoupling of 0.1 uF ceramic close to the supply pin, and observe the derating for I/O loading above 50 pF. For battery-backup designs, hold CE HIGH during VCC ramp-down to enter standby and minimize retention current to a few microamps. Where higher speed (55 ns) or different pinouts are required, consult the K6X1008C2D family ordering matrix.
This page synthesizes distributor pricing, drop-in alternative MPNs, and practical design notes that are not consolidated in any single vendor catalog, helping engineers quickly evaluate the K6X1008C2D-GF70 for new designs and legacy replacements.
Аналоги без доработки для K6X1008C2D-GF70 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с K6X1008C2D-GF70 (тот же форм-фактор и посадочное место) — отличается по Memory Type, Process Technology.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
K6T1008C2E-GF70
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
K6X1008C2D-BF70
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$1.28 / шт.
Открыть даташит →AS6C1008-55SIN
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
AS6C1008-55PCN
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
CY62128VLL-70ZAXI
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
K6X1008C2D-GF70 Максимальные параметры и электрические характеристики
| Тип памяти | Asynchronous SRAM (CMOS, Low Power) |
| Memory Density | 1 Mbit (128K x 8) |
| Организация памяти | 128K x 8 |
| Access Time (tAA) | 70 ns |
| Operating Voltage (Vcc) | 4.5 V to 5.5 V |
| Operating Current (Icc) | 35 mA |
| Диапазон рабочих температур | Commercial (I) / Automotive (a) - per ordering code |
| Корпус | 32-SOP (PDSO32, 0.525 inch, plastic) |
| Тип монтажа | Surface Mount |
| Интерфейс | Parallel, asynchronous |
| Тип выхода | Three-state bidirectional |
| Input/Output Logic | TTL-compatible |
| Process Technology | Samsung full CMOS (6T cell) |
| Standby Mode | Chip Enable (CE) controlled |
Конфигурация выводов K6X1008C2D-GF70
| Контакт 1 | A14 / NC — Address line 14 (NC for 128K density; verify against datasheet) |
| Контакт 2 | A12 — Address line 12 |
| Контакт 3 | A7 — Address line 7 |
| Контакт 4 | A6 — Address line 6 |
| Контакт 5 | A5 — Address line 5 |
| Контакт 6 | A4 — Address line 4 |
| Контакт 7 | A3 — Address line 3 |
| Контакт 8 | A2 — Address line 2 |
| Контакт 9 | A1 — Address line 1 |
| Контакт 10 | A0 — Address line 0 |
| Контакт 11 | DQ0 — Data I/O 0 |
| Контакт 12 | DQ1 — Data I/O 1 |
| Контакт 13 | DQ2 — Data I/O 2 |
| Контакт 14 | VSS — Ground |
| Контакт 15 | DQ3 — Data I/O 3 |
| Контакт 16 | DQ4 — Data I/O 4 |
| Контакт 17 | DQ5 — Data I/O 5 |
| Контакт 18 | DQ6 — Data I/O 6 |
| Контакт 19 | DQ7 — Data I/O 7 |
| Контакт 20 | CE — Chip Enable (active LOW for typical SRAM family; verify against K6X1008C2D datasheet) |
| Контакт 21 | A10 — Address line 10 |
| Контакт 22 | OE — Output Enable (active LOW) |
| Контакт 23 | A11 — Address line 11 |
| Контакт 24 | WE — Write Enable (active LOW) |
| Контакт 25 | A13 — Address line 13 |
| Контакт 26 | A8 — Address line 8 |
| Контакт 27 | A9 — Address line 9 |
| Контакт 28 | NC — Not connected |
| Контакт 29 | NC — Not connected |
| Контакт 30 | NC — Not connected |
| Контакт 31 | NC — Not connected |
| Контакт 32 | VCC — Power supply (4.5 V to 5.5 V) |
Типичное применение
K6X1008C2D-GF70 подходит для 6 применениеs: Industrial Controller Parameter Storage, Point-of-Sale Terminal Buffer, Battery-Backed Configuration Memory, Embedded Firmware Trace Buffer, Portable Data Logger RAM, Vending Machine / Kiosk Memory.
Industrial Controller Parameter Storage
The K6X1008C2D-GF70 stores calibration constants, machine parameters, and runtime state in PLCs and industrial controllers. Its 128K x 8 organization (1 Mbit) accommodates 8 to 16 typical parameter blocks plus a configuration journal, and the 70 ns access time keeps well within the bus cycle of most 8-bit and 16-bit industrial microcontrollers. Unlike flash or EEPROM, the asynchronous SRAM interface needs no write-erase sequencing, so the host CPU can read or write at full bus speed. The 32-SOP GF package is the dominant industrial SMT footprint, simplifying board layout. Battery-backup support (low VccDR retention) is critical for industrial systems that must survive power loss without losing setup data.
Рекомендуется
Point-of-Sale Terminal Buffer
In point-of-sale (POS) terminals, the K6X1008C2D-GF70 buffers transaction records, receipt buffer queues, and temporary display data before commit to non-volatile storage. Its low-power CMOS design (35 mA active) keeps thermal dissipation low in enclosed POS housings, and the 70 ns read/write time easily supports printer and display DMA bursts. The 32-SOP package fits standard POS mainboard layouts that already use 32-SOP footprints for flash and PSRAM. The CE-controlled standby mode lets the terminal drop SRAM into retention while the printer head is active, saving battery in mobile POS units.
Рекомендуется
Battery-Backed Configuration Memory
The K6X1008C2D-GF70 retains configuration in smart meters, security panels, and other battery-backed systems that must survive mains power loss. Per the Samsung datasheet, the part supports low data-retention voltage (down to approximately 2 V) with minimal retention current, allowing a coin cell or supercap to hold the 1 Mbit of configuration for the cell's lifetime. CE-controlled standby places the device into low-power retention when VCC ramps down. The 32-SOP GF footprint is the same as the related K6T1008C2E family, allowing a layout-identical migration to an active Samsung or Alliance Memory AS6C1008 part if longevity becomes a concern.
Рекомендуется
Embedded Firmware Trace Buffer
Developers use the K6X1008C2D-GF70 as a circular trace buffer in embedded firmware debug builds, capturing the last few KB of execution history before a watchdog reset. With 1 Mbit (128 KB) of capacity, the SRAM can hold roughly 16K 32-bit trace entries, enough for most post-mortem analysis on 8/16-bit MCUs. The 70 ns access time matches the typical external memory cycle of 8051-class and PIC16/18 microcontrollers, and the asynchronous interface requires no special DMA controller. After the bug is found, the designer can swap to flash or battery-backed SRAM for production without changing the 32-SOP footprint.
Рекомендуется
Portable Data Logger RAM
Handheld data loggers (temperature, gas, vibration) buffer high-rate sensor samples in the K6X1008C2D-GF70 before flushing them to flash or uploading over USB. The 1 Mbit capacity stores about 4 hours of 16-bit samples at 100 Hz, sufficient for most field inspections. The low-power CMOS 35 mA active current keeps battery drain modest during logging bursts, and the 32-SOP footprint integrates easily into compact handheld layouts. CE-controlled standby allows the host MCU to gate the SRAM between sample bursts, dropping retention current to microampere levels for long battery life.
Рекомендуется
Vending Machine / Kiosk Memory
Vending machines and self-service kiosks use the K6X1008C2D-GF70 as working memory for transaction state, audit logs, and inventory counters between mains power events. The 128K x 8 organization holds tens of thousands of audit records in RAM without flash wear, and the asynchronous interface avoids the controller overhead of PSRAM or serial SRAM. The 32-SOP SOP-32 package is the standard JEDEC footprint used by most kiosk controller boards. Battery backup via a supercap keeps the SRAM contents alive during power glitches common to vending installations.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для K6X1008C2D-GF70 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | K6T1008C2E-GF70 | AS6C1008-55SIN | AS6C1008-55PCN | CY62128VLL-70ZAXI |
|---|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Alliance Memory | Alliance Memory | Infineon |
| Package | 32-SOP (PDSO32) | 32-SOP (PDSO32) - same | 32-SOP - same | 32-PDIP - same JEDEC pinout | 32-STSOP - same |
| Memory Density | 1 Mbit (128K x 8) | 1 Mbit (128K x 8) | 1 Mbit (128K x 8) | 1 Mbit (128K x 8) | 1 Mbit (128K x 8) |
| Access Time (tAA) | 70 ns | 70 ns | 55 ns (faster) | 55 ns (faster) | 70 ns |
| Operating Voltage (Vcc) | 4.5 V to 5.5 V | 4.5 V to 5.5 V | 4.5 V to 5.5 V | 4.5 V to 5.5 V | 2.7 V to 3.6 V (3.3 V part, verify) |
| Lifecycle Status | Obsolete | Active (per Samsung K6T family listings) | Active | Active | Active |
| Pin-Compatible Drop-In | Reference | Yes (same 32-SOP GF footprint) | Yes (32-SOP JEDEC) | Yes (32-PDIP JEDEC, through-hole variant) | Yes (32-STSOP JEDEC, Vcc check required) |
Ключевые отличия
- JEDEC-standard 32-SOP footprint with broad cross-brand compatibility (против AS6C1008-55SIN)
- Family upgrade path within Samsung's own portfolio (против K6T1008C2E-GF70)
- Low data-retention voltage for true battery-backup designs (против CY62128VLL-70ZAXI)
Заметки по проектированию
Place a 0.1 uF ceramic decoupling capacitor as close as possible to the K6X1008C2D-GF70 VCC pin (pin 32), with a low-ESR bulk capacitor (e.g., 10 uF tantalum) within 1 cm to handle the 35 mA active-current transients during write cycles. For battery-backup designs, add a steering-diode OR (Schottky, e.g., BAT54S) between VCC and the backup cell, with CE held HIGH during VCC ramp-down to enter low-retention mode. Estimated: at 35 mA active and 5 V, the part dissipates approximately 175 mW during reads - well within the 32-SOP thermal envelope.
Do not assume pin 20 is an active-HIGH CE; most async SRAMs use active-LOW CE, but always verify the K6X1008C2D family datasheet control-logic truth table before layout. Avoid driving OE and WE simultaneously LOW - this is an invalid state that can cause bus contention. For 128K x 8 mode, address line A14 may be a no-connect (NC) on this density; the datasheet address map should be confirmed. Also note: 70 ns access time assumes a 50 pF load; derate timing for higher capacitive loads on DQ lines.
Route the 8 DQ lines together with matched trace lengths to within 1 cm to preserve setup/hold margins on the host MCU bus. Keep CE, OE, WE traces short and away from switching DC-DC converter edges to avoid false triggers. Place the K6X1008C2D-GF70 on the same ground plane as the host MCU, with a single via stitch every 5 mm along the package perimeter for thermal dissipation. The exposed-pad (if any) on the 32-SOP variant should be soldered to a copper pour for best thermal and EMI performance.
Информация о соответствии
The K6X1008C2D-GF70 datasheet snippet describes the part as a 'Low Power CMOS Static RAM' but does not explicitly state RoHS, REACH, lead-free, halogen-free, or conflict-minerals compliance. Samsung's legacy SOP-32 SRAM family predates widespread RoHS documentation; assume 'unknown' and verify with the manufacturer before designing into a RoHS-required product. AEC-Q100 is not applicable for this commercial/industrial SRAM.
