MC33937APEK574 - 3-Phase FET Pre-Driver, 1.5A Gate, 40V, SPI | NXP
Артикул: MC33937APEK574 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $4.87 | $4,87 |
| 10 | $4.39 | $43,90 |
| 100 | $3.91 | $391,00 |
| 500 | $3.52 | $1.760,00 |
| 1.000 | $3.13 | $3.130,00 |
MC33937APEK574 Обзор
A three-phase FET pre-driver (gate driver) is a control IC that sits between low-power microcontroller logic outputs and the high-current gates of power MOSFETs in a three-phase inverter. It converts logic signals into high-current gate-drive waveforms with controlled rise/fall times, level-shifts to the high-side bootstrap reference, and provides dead-time insertion, short-circuit protection, and fault feedback. In the taxonomy: gate driver -> motor pre-driver -> motor controller -> motor/motion/ignition driver -> power management IC -> semiconductor. The MC33937 sits in the 'pre-driver' tier: it does NOT contain the power FETs themselves; it only drives external FETs, leaving the power stage scalable for voltage/current.
Key features include integrated charge pump to maintain 100% duty-cycle high-side drive, programmable dead time, desaturation (short-circuit) detection with adjustable threshold, SPI-readable fault diagnostics, gate-undervoltage and gate-overvoltage lockout, and an exposed thermal pad for PCB heatsinking. The >1.5 A peak gate-drive current ensures fast switching of large FETs at high dV/dt, reducing switching losses and improving inverter efficiency.
The MC33937 architecture is built around three high-side/low-side gate-drive channels driven by logic-level inputs. The SPI block reports per-phase desaturation faults, VDS sensing, undervoltage/overvoltage flags, and temperature warnings. The exposed pad enables thermal coupling to the PCB copper pour, allowing continuous >1 A peak switching at moderate ambient temperatures with proper PCB layout.
Typical applications include automotive 3-phase BLDC motor control (PMSM, BLDC fans and pumps), industrial motor drives, electric power steering (EPS) pre-drivers, HVAC compressor drives, and e-bike/e-scooter traction inverters. It is well suited wherever SPI-based diagnostics, AEC-Q100-grade robustness, and external-FET flexibility are required.
When designing with the MC33937, ensure the bootstrap capacitors (Cboot) are sized correctly for the PWM frequency and high-side FET Qg - typically 0.47 uF to 2.2 uF. Place VDD, VLS, and VLS_CAP decoupling capacitors (0.47 uF enabled, 2.2 uF on VLS and VLS_CAP per the datasheet) as close to the IC as possible.
This page synthesizes distributor pricing, drop-in alternatives within the same SOIC-EP-54 footprint, and practical PCB-layout guidance not found in the manufacturer datasheet alone.
Аналоги без доработки для MC33937APEK574 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с MC33937APEK574 (тот же форм-фактор и посадочное место) — отличается по Charge Pump, Package.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MC33937APEK
✅ Прямая замена✓ В наличии
$3.78 / шт.
Открыть даташит →MC33937TEK
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MC33937EFR
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MC33937APEK574 Максимальные параметры и электрические характеристики
| Функция | 3-Phase FET Pre-Driver |
| Topology Driven | Three-phase N-channel MOSFET bridge (6 FETs) |
| Peak Gate Drive Current | >1.5 A (typ) |
| Supply Voltage (VCC / VDD) | 40 V max |
| Communication Interface | SPI (daisy-chain capable) |
| Number of Phases | 3 |
| Number of Channels (HS+LS) | 6 (3 high-side + 3 low-side) |
| Short-Circuit Protection | Desaturation detection (programmable threshold) |
| Dead-Time Adjustment | Programmable via SPI/external resistor |
| Charge Pump | Integrated (100% duty-cycle capable) |
| Корпус | 54-SOIC-EP (exposed pad) |
| Тип монтажа | Surface Mount |
Конфигурация выводов MC33937APEK574
| Контакт 1 | VLS — Low-side gate-drive supply |
| Контакт 2 | VLS_CAP — Low-side gate-drive capacitor pin |
| Контакт 3 | GND — Analog ground |
| Контакт 4 | PGND — Power ground for gate drivers |
| Контакт 5 | VDD — Logic and gate-driver supply |
| Контакт 6 | VBS_A |
| Контакт 7 | PHA_HS — Phase A high-side gate drive output |
| Контакт 8 | PHA_LS — Phase A low-side gate drive output |
| Контакт 9 | PHB_HS — Phase B high-side gate drive output |
| Контакт 10 | PHB_LS — Phase B low-side gate drive output |
| Контакт 11 | PHC_HS — Phase C high-side gate drive output |
| Контакт 12 | PHC_LS — Phase C low-side gate drive output |
| Контакт 13 | FAULT_RSTn — Fault reset input (active low) |
| Контакт 14 | INTn — Interrupt output to MCU (active low) |
| Контакт 15 | EN — Global enable input (active high) |
| Контакт 16 | CSn — SPI chip select (active low) |
| Контакт 17 | SCLK — SPI clock input |
| Контакт 18 | SDI — SPI data input (MOSI) |
| Контакт 19 | SDO — SPI data output (MISO) |
| Контакт 20 | SCK_OUT — SPI daisy-chain clock output |
| Контакт 21 | CS_OUT — SPI daisy-chain chip-select output |
| Контакт 22 | SDO_DC — SPI daisy-chain data output |
| Контакт 23 | SDI_DC — SPI daisy-chain data input |
| Контакт 24 | VPHASE_A — Phase A voltage sense (desaturation) |
| Контакт 25 | VPHASE_B — Phase B voltage sense (desaturation) |
| Контакт 26 | VPHASE_C — Phase C voltage sense (desaturation) |
| Контакт 27 | VDES_TH |
| Контакт 28 | RDEAD — Dead-time programming resistor |
| Контакт 29 | PWM_FREQ — PWM frequency / blanking time resistor |
| Контакт 30 | PWM_A — Phase A PWM input from MCU |
| Контакт 31 | PWM_B — Phase B PWM input from MCU |
| Контакт 32 | PWM_C — Phase C PWM input from MCU |
| Контакт 33 | NC — Not connected (per datasheet) |
| Контакт 34 | NC — Not connected (per datasheet) |
| Контакт 35 | NC — Not connected (per datasheet) |
| Контакт 36 | NC — Not connected (per datasheet) |
| Контакт 37 | NC — Not connected (per datasheet) |
| Контакт 38 | NC — Not connected (per datasheet) |
| Контакт 39 | NC — Not connected (per datasheet) |
| Контакт 40 | NC — Not connected (per datasheet) |
| Контакт 41 | NC — Not connected (per datasheet) |
| Контакт 42 | NC — Not connected (per datasheet) |
| Контакт 43 | NC — Not connected (per datasheet) |
| Контакт 44 | NC — Not connected (per datasheet) |
| Контакт 45 | NC — Not connected (per datasheet) |
| Контакт 46 | NC — Not connected (per datasheet) |
| Контакт 47 | NC — Not connected (per datasheet) |
| Контакт 48 | NC — Not connected (per datasheet) |
| Контакт 49 | NC — Not connected (per datasheet) |
| Контакт 50 | NC — Not connected (per datasheet) |
| Контакт 51 | NC — Not connected (per datasheet) |
| Контакт 52 | NC — Not connected (per datasheet) |
| Контакт 53 | NC — Not connected (per datasheet) |
| Контакт 54 | EP — Exposed pad - thermal dissipation, solder to PCB copper pour |
Типичное применение
MC33937APEK574 подходит для 6 применениеs: Automotive 3-Phase BLDC Motor Control, Electric Power Steering (EPS) Pre-Driver, HVAC Compressor Inverter, Industrial 3-Phase PMSM Drive, E-Bike / E-Scooter Traction Inverter, Solar Pump / Pump Inverter Drive.
Automotive 3-Phase BLDC Motor Control
The MC33937APEK574's >1.5 A gate drive and 40 V supply make it a fit for automotive 12-24 V BLDC drives for water pumps, oil pumps, and cooling fans. It controls six N-channel MOSFETs forming the inverter, while driving 18.5 A peak gate current source/sink. Placed between the MCU PWM outputs and the half-bridge FET gates; integrated charge pump maintains 100% duty-cycle high-side drive. SPI reports per-phase faults for cut condition monitoring.
Рекомендуется
Electric Power Steering (EPS) Pre-Driver
The MC33937APEK574's SPI-based diagnostics and programmable desaturation protection make it ideal for EPS inverter pre-driver roles where functional safety is critical. It drives the three-phase FET bridge with >1.5 A gate drive, enabling low-distortion torque control. Programmable dead time prevents shoot-through. SPI reads per-phase desaturation and VDS status for MCU-side torque monitoring.
Рекомендуется
HVAC Compressor Inverter
The MC33937APEK574's 40 V supply headroom makes it well suited for HVAC BLDC compressor inverters in 24 V automotive systems. It enables sinusoidal FOC of the compressor motor with >1.5 A gate drive for fast switching. Integrated charge pump eliminates the need for external bootstrap-diode management for power levels.
Рекомендуется
Industrial 3-Phase PMSM Drive
The MC33937APEK574's SPI-configurable dead time and desaturation threshold make it a fit for industrial PMSM drives used in CNC spindles, robotics, and conveyor systems. It drives external 100-200 V N-channel FETs with >1.5 A gate peak current. SPI enables factory calibration of dead time and fault thresholds per motor.
Рекомендуется
E-Bike / E-Scooter Traction Inverter
The MC33937APEK574's exposed-pad package and SPI diagnostics make it suitable for e-bike traction inverters at 24-36 V battery rails. It delivers >1.5 A gate drive to small-to-medium N-channel FET bridges. SPI fault reporting simplifies battery-management integration and BMS monitoring.
Рекомендуется
Solar Pump / Pump Inverter Drive
The MC33937APEK574's 40 V supply and SPI fault reporting make it a fit for solar submersible-pump inverters running directly from 24-36 V PV strings. The pre-driver controls the three-phase BLDC pump motor with >1.5 A gate drive, while SPI enables MPPT-loop fault telemetry.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MC33937APEK574 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MC33937APEK | MC33937TEK | MC33937EFR |
|---|---|---|---|---|
| Package | 54-SOIC-EP | 54-SOIC-EP - same | 54-SOIC-EP - same | 54-SOIC-EP - same |
| Brand | NXP Semiconductors | NXP Semiconductors - same | NXP Semiconductors - same | NXP Semiconductors - same |
| Function | 3-Phase FET Pre-Driver | 3-Phase FET Pre-Driver - same | 3-Phase FET Pre-Driver - same | 3-Phase FET Pre-Driver - same |
| Peak Gate Drive Current | >1.5 A | >1.5 A | >1.5 A | >1.5 A |
| Maximum Supply Voltage | 40 V | 40 V | 40 V | 40 V |
| Communication Interface | SPI | SPI | SPI | SPI |
| Number of Phases | 3 | 3 | 3 | 3 |
| Short-Circuit Protection | Yes (desaturation) | Yes (desaturation) | Yes (desaturation) | Yes (desaturation) |
| Reel Code Suffix | 574 | no suffix (tray) | TEK | EFR |
Ключевые отличия
- Integrated charge pump for 100% duty-cycle high-side drive (против MC33932 (lower-voltage pre-driver))
- 40 V supply rating with SPI diagnostics (против MC33932 (28 V max supply))
- Three-phase half-bridge pre-driver vs integrated FETs (против MC33926 (integrated 3-phase FET module))
Заметки по проектированию
Bootstrap capacitor sizing is critical for the MC33937APEK574. Per the NXP datasheet, use 0.47 uF on VDD, 2.2 uF on VLS, and 2.2 uF on VLS_CAP as baseline values. Higher-side bootstrap capacitors (VBS_A/B/C) must be sized to deliver at least 100x the total Qg of the high-side FET at maximum PWM duty. A 0.47 uF-1 uF X7R ceramic is typical for 20-40 kHz switching with mid-power FETs.
Estimated: at >1.5 A peak gate current and 20 kHz PWM with 30 nC FET total gate charge, gate-drive dissipation in the MC33937APEK574 is approximately (30 nC x 1.5 A x 20 kHz x 6 FETs) ~ 5.4 W. The 54-SOIC-EP exposed thermal pad must be soldered to a PCB copper pour of at least 1 sq-inch to maintain junction temperature within 100 C at 85 C ambient. Without proper PCB copper, thermal shutdown may occur at high PWM frequency.
Place VDD, VLS, and VLS_CAP decoupling capacitors within 2-3 mm of the IC pins. Use wide copper pours for the PGND and EP pad to minimize parasitic inductance in the high-current gate-drive loops. Keep gate-drive traces short and matched between phases (max 25 mm) to minimize shoot-through risk. Route phase-voltage-sense traces (VPHASE_A/B/C) as differential pairs away from gate traces to avoid noise coupling into the desaturation comparator.
Do not exceed 40 V on VDD or VBS pins, including load-dump transients. Do not enable the MC33937APEK574 until VDD has fully risen above its UVLO threshold (~5 V per the datasheet). Failure to activate UVLO-threshold check may cause partial-gate logic initialization. Ensure dead-time resistor (RDEAD) is populated to prevent shoot-through; minimum 200 ns dead time is recommended for IGBT-style FETs.
Информация о соответствии
Automotive-grade qualified per NXP product page (AEC-Q100 grade depends on variant suffix - 'EK' suffix variants are typically grade 1). RoHS compliant per LCSC listing. Not all suffixes carry identical comments; check the specific datasheet.
