MPQ2222A - Quad NPN 40V 500mA Transistor Array | Central Semiconductor
Référence : MPQ2222A ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $0.82 | $0,82 |
| 10 | $0.72 | $7,20 |
| 100 | $0.58 | $58,00 |
| 500 | $0.49 | $245,00 |
| 1 000 | $0.41 | $410,00 |
MPQ2222A Présentation
A transistor array such as the MPQ2222A integrates multiple discrete BJTs into a single package, reducing board space, component count, and assembly cost. Arrays sit within the semiconductor hierarchy of discrete semiconductors -> bipolar transistors -> transistor arrays, and are a staple of through-hole general-purpose amplifier and switching designs.
Key features include four electrically independent NPN transistors, guaranteed 2N2222A-equivalent parameters (a JEDEC-registered industry-standard transistor type), and a DIP-14 footprint compatible with standard 0.1-inch pitch prototyping boards and sockets. The PBFREE suffix indicates lead-free construction, and the through-hole package simplifies hand soldering, prototyping, and rework.
Each transistor in the MPQ2222A shares the same silicon process, so matched electrical characteristics across the four devices improve thermal tracking in push-pull and differential configurations compared with four separate discrete transistors. The 200MHz transition frequency range typical of the 2N2222A class supports fast switching and RF applications up to the VHF region.
Typical applications include general purpose amplifiers, logic-level switching, LED and relay drivers, and mixed-signal prototyping where multiple NPN transistors are required.
Designers should note that total package dissipation is shared across all four devices, so per-transistor power must be budgeted accordingly.
This page synthesizes distributor data, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Alternatives de remplacement direct pour MPQ2222A — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec MPQ2222A (même facteur de forme et même empreinte) — différant par Package, Collector-Base Voltage (VCBO), Configuration, Emitter-Base Voltage (VEBO), RoHS Status.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MPQ2222A PBFREE
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MPQ2222
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$0.39 / unité
Voir la fiche technique →MPQ2222A
✅ Remplacement direct✓ En stock
$0.41 / unité
Voir la fiche technique →MPQ2222AR
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
MPQ2222A Valeurs maximales et caractéristiques électriques
| Type de transistor | Quad NPN General Purpose BJT Array |
| Number of Transistors | 4 (independent) |
| Tension collecteur-émetteur (Vceo) | 40 V |
| Tension collecteur-base (Vcbo) | 75 V |
| Tension émetteur-base (Vebo) | 6.0 V |
| Continuous Collector Current | 500 mA |
| Power Dissipation (total package) | 650 mW |
| Transition Frequency | 200 MHz |
| Boîtier | TO-116 (14-pin DIP, through hole) |
| Type de montage | Through Hole |
| Configuration | General Purpose Amplifier / Switch |
| Base Technology | Bipolar (BJT) |
| Polarity | NPN |
| Lead-Free | Yes (PBFREE) |
Configuration des broches de MPQ2222A
| Broche 1 | Q1 Base — Base of transistor 1 |
| Broche 2 | Q1 Collector — Collector of transistor 1 |
| Broche 3 | Q1 Emitter — Emitter of transistor 1 |
| Broche 4 | Q2 Base — Base of transistor 2 |
| Broche 5 | Q2 Collector — Collector of transistor 2 |
| Broche 6 | Q2 Emitter — Emitter of transistor 2 |
| Broche 7 | NC — Not connected (per datasheet) |
| Broche 8 | Q3 Base — Base of transistor 3 |
| Broche 9 | Q3 Collector — Collector of transistor 3 |
| Broche 10 | Q3 Emitter — Emitter of transistor 3 |
| Broche 11 | Q4 Base — Base of transistor 4 |
| Broche 12 | Q4 Collector — Collector of transistor 4 |
| Broche 13 | Q4 Emitter — Emitter of transistor 4 |
| Broche 14 | NC — Not connected (per datasheet) |
Applications typiques
MPQ2222A convient pour 6 applications: General Purpose Amplification, Relay and Solenoid Driver, LED Driver and Indicator Circuits, Legacy Equipment Repair and Rework, Education and Prototyping, Switching Logic and Level Interfaces.
General Purpose Amplification
The MPQ2222A provides four independent 2N2222A-class NPN transistors in one 14-pin DIP, making it a natural fit for multi-stage small-signal amplifiers, buffers, and comparators built in through-hole. Its approximately 200MHz transition frequency supports audio through low-RF gain stages, while the guaranteed A-grade hFE range simplifies bias design and stage-to-stage gain prediction. Because all four die share one package, they track thermally, reducing drift in differential or push-pull front ends compared with four separate TO-92 devices. Place the array in a standard DIP socket for fast experimentation; each base needs only a series resistor, and emitter degeneration of tens of ohms stabilizes gain at 500mA-class collector currents well within the 650mW package budget.
Recommandé
Relay and Solenoid Driver
The MPQ2222A drives small 5V and 12V relays and solenoids directly from microcontroller outputs: each NPN element sinks up to 500mA continuously, far above typical 15-80mA signal-relay coil currents, and 40V VCEO withstands coil transients with an external flyback diode. Estimated: driving a 12V/30mA relay coil with roughly 0.3V saturation dissipates only about 9mW per device, negligible against the 650mW package rating. The four independent transistors let one DIP drive four channels of relay logic on a single prototyping board. Use a 1k-4.7k base resistor from 5V logic for reliable saturation, and keep coil current under 300mA per channel when several channels operate simultaneously to respect total package dissipation.
Recommandé
LED Driver and Indicator Circuits
With 500mA per channel and simple base-resistor drive, the MPQ2222A sinks LED strings, indicator lamps, and seven-segment digits from 3.3V or 5V logic. Estimated: switching a 100mA LED string with 0.3V collector-emitter saturation dissipates about 30mW, so even four simultaneous 100mA channels total roughly 120mW, comfortably within the 650mW package limit. The A-grade hFE guarantee of 100 or more means a 2-5mA base drive fully saturates the transistor from any MCU GPIO. The through-hole DIP package suits breadboard prototyping of multiplexed displays and status panels, and the pin-per-transistor layout keeps routing intuitive: base pin adjacent to the MCU row, collector pin to the LED cathode row.
Recommandé
Legacy Equipment Repair and Rework
The MPQ2222A is a preferred repair part for vintage industrial controls, test equipment, and audio gear that used Motorola-original MPQ2222A or MPQ2222 quad arrays in 14-pin DIP sockets. Central Semiconductor continues the exact TO-116 footprint and 2N2222A-grade electricals, so a PBFREE replacement drops into the original socket without PCB modification. The four-independent-transistor architecture means a failed channel can be verified by diode-testing base-emitter and base-collector junctions on each triplet of pins (1/2/3, 4/5/6, 8/9/10, 11/12/13). Keeping MPQ2222A in stock covers repair of driver boards across decades of equipment that standardized on this array.
Recommandé
Education and Prototyping
Four matched transistors in one breadboard-friendly DIP make the MPQ2222A ideal for electronics education and rapid prototyping: students can build astable multivibrators, differential pairs, current mirrors, and H-bridge halves without juggling loose TO-92 cans. The 0.1-inch pitch drops directly into solderless breadboards and wire-wrap boards, and the datasheet's per-pin ordering (B-C-E triplets) teaches package reading. With 40V and 500mA ratings, experiments can run at realistic 12V industrial levels safely, and the approximately 200MHz fT demonstrates both audio amplification and RF oscillation on one device. Because the four die share a silicon process, matched-pair lab measurements (VBE matching, beta tracking) give repeatable classroom results.
Recommandé
Switching Logic and Level Interfaces
The MPQ2222A implements discrete NOR/NAND gates, level shifters, and open-collector bus interfaces where 40V collector standoff is needed on 5V-logic systems. Each transistor's 40V VCEO allows interfacing 24V industrial sensor lines to low-voltage microcontrollers: the collector ties to the 24V domain through a pull-up, the base is driven from the 5V side through a resistor divider, giving a robust non-inverting or inverting translator. Estimated: with a 2.2k pull-up to 24V, saturated collector current is about 10mA, dissipating only a few milliwatts per channel. Four channels per package suit parallel status buses, stepper phase drivers, and PLC-style input cards built in repairable through-hole form.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MPQ2222A — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MPQ2222A PBFREE | MPQ2222 | MPQ2222A (Motorola) |
|---|---|---|---|---|
| Package | TO-116 (14-pin DIP) | TO-116 (14-pin DIP) - same | TO-116 (14-pin DIP) - same | TO-116 (14-pin DIP) - same |
| Brand | Central Semiconductor | Central Semiconductor | Central Semiconductor | onsemi (legacy Motorola) |
| Configuration | 4 x independent NPN | 4 x independent NPN | 4 x independent NPN | 4 x independent NPN |
| VCEO | 40 V | 40 V | 40 V | 40 V |
| Collector Current | 500 mA | 500 mA | 500 mA | 500 mA |
| Package Power Dissipation | 650 mW | 650 mW | 650 mW | 650 mW |
| hFE Grade | A-grade (2N2222A limits) | A-grade (2N2222A limits) | Standard grade (wider limits) | A-grade (2N2222A limits) |
| Lifecycle Status | Active | Active | Active | Obsolete (legacy source) |
Principaux différenciateurs
- A-grade gain guarantee (vs MPQ2222)
- Active production source for a legacy type (vs MPQ2222A (Motorola))
- Four independent transistors vs one (vs 2N2222A)
Notes de conception
Budget power against the 650mW total package rating, not a per-transistor figure. Estimated: one transistor dissipating 500mA at 1V VCE would be 500mW alone - fine short-term, but add ambient derating above 25C per the manufacturer datasheet curve. If multiple channels drive heavy loads simultaneously, spread dissipation by inserting small emitter resistors (2.2-10 ohm) to force current sharing and reduce per-die stress.
Always fit a flyback diode across relay and solenoid coils; the 40V VCEO rating does not make the transistors avalanche-proof against unclamped inductive kickback from a 12V coil, which can exceed 100V. Also confirm the A-grade hFE requirement: substituting the standard MPQ2222 in a design biased for guaranteed 2N2222A beta may shift saturation and gain margins in low-base-drive circuits.
For through-hole prototyping, use a DIP-14 socket to allow easy substitution between MPQ2222A, MPQ2222, and future replacement grades without desoldering. Keep collector traces carrying near-500mA currents at least 0.5mm wide (1oz copper) and place flyback diodes physically close to the load, not the array, to contain inductive switching loops and reduce EMI.
Informations de conformité
PBFREE suffix denotes Central Semiconductor lead-free construction; Mouser lists the part as NPN 75Vcbo 40Vceo 6.0Vebo 500mA 650mW. REACH, halogen-free, and conflict-minerals declarations not stated in retrieved data.
