MPQ2222A - Quad NPN 40V 500mA Transistor Array | Central Semiconductor
料号： MPQ2222A ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0.82 | $0.82 |
| 10 | $0.72 | $7.20 |
| 100 | $0.58 | $58.00 |
| 500 | $0.49 | $245.00 |
| 1,000 | $0.41 | $410.00 |
MPQ2222A 概述
A transistor array such as the MPQ2222A integrates multiple discrete BJTs into a single package, reducing board space, component count, and assembly cost. Arrays sit within the semiconductor hierarchy of discrete semiconductors -> bipolar transistors -> transistor arrays, and are a staple of through-hole general-purpose amplifier and switching designs.
Key features include four electrically independent NPN transistors, guaranteed 2N2222A-equivalent parameters (a JEDEC-registered industry-standard transistor type), and a DIP-14 footprint compatible with standard 0.1-inch pitch prototyping boards and sockets. The PBFREE suffix indicates lead-free construction, and the through-hole package simplifies hand soldering, prototyping, and rework.
Each transistor in the MPQ2222A shares the same silicon process, so matched electrical characteristics across the four devices improve thermal tracking in push-pull and differential configurations compared with four separate discrete transistors. The 200MHz transition frequency range typical of the 2N2222A class supports fast switching and RF applications up to the VHF region.
Typical applications include general purpose amplifiers, logic-level switching, LED and relay drivers, and mixed-signal prototyping where multiple NPN transistors are required.
Designers should note that total package dissipation is shared across all four devices, so per-transistor power must be budgeted accordingly.
This page synthesizes distributor data, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
直接替换替代料： MPQ2222A ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： MPQ2222A （相同外形与封装尺寸） ——差异在于 Package, Collector-Base Voltage (VCBO), Configuration, Emitter-Base Voltage (VEBO), RoHS Status.
快速对比工具——选择替代料号进行并排对比：
MPQ2222A PBFREE
✅ 直接替换📋 参考替代料（不在目录中）
MPQ2222
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$0.39 / 个
查看数据手册 →MPQ2222A
✅ 直接替换✓ 有现货
$0.41 / 个
查看数据手册 →MPQ2222AR
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MPQ2222A 最大额定值与电气特性
| 晶体管类型 | Quad NPN General Purpose BJT Array |
| Number of Transistors | 4 (independent) |
| 集电极-发射极电压（Vceo） | 40 V |
| 集电极-基极电压（Vcbo） | 75 V |
| 发射极-基极电压（Vebo） | 6.0 V |
| Continuous Collector Current | 500 mA |
| Power Dissipation (total package) | 650 mW |
| Transition Frequency | 200 MHz |
| 封装 | TO-116 (14-pin DIP, through hole) |
| 安装类型 | Through Hole |
| Configuration | General Purpose Amplifier / Switch |
| Base Technology | Bipolar (BJT) |
| Polarity | NPN |
| Lead-Free | Yes (PBFREE) |
MPQ2222A 引脚配置
| 引脚 1 | Q1 Base — Base of transistor 1 |
| 引脚 2 | Q1 Collector — Collector of transistor 1 |
| 引脚 3 | Q1 Emitter — Emitter of transistor 1 |
| 引脚 4 | Q2 Base — Base of transistor 2 |
| 引脚 5 | Q2 Collector — Collector of transistor 2 |
| 引脚 6 | Q2 Emitter — Emitter of transistor 2 |
| 引脚 7 | NC — Not connected (per datasheet) |
| 引脚 8 | Q3 Base — Base of transistor 3 |
| 引脚 9 | Q3 Collector — Collector of transistor 3 |
| 引脚 10 | Q3 Emitter — Emitter of transistor 3 |
| 引脚 11 | Q4 Base — Base of transistor 4 |
| 引脚 12 | Q4 Collector — Collector of transistor 4 |
| 引脚 13 | Q4 Emitter — Emitter of transistor 4 |
| 引脚 14 | NC — Not connected (per datasheet) |
典型应用
MPQ2222A 适用于 6 应用s: General Purpose Amplification, Relay and Solenoid Driver, LED Driver and Indicator Circuits, Legacy Equipment Repair and Rework, Education and Prototyping, Switching Logic and Level Interfaces.
General Purpose Amplification
The MPQ2222A provides four independent 2N2222A-class NPN transistors in one 14-pin DIP, making it a natural fit for multi-stage small-signal amplifiers, buffers, and comparators built in through-hole. Its approximately 200MHz transition frequency supports audio through low-RF gain stages, while the guaranteed A-grade hFE range simplifies bias design and stage-to-stage gain prediction. Because all four die share one package, they track thermally, reducing drift in differential or push-pull front ends compared with four separate TO-92 devices. Place the array in a standard DIP socket for fast experimentation; each base needs only a series resistor, and emitter degeneration of tens of ohms stabilizes gain at 500mA-class collector currents well within the 650mW package budget.
推荐
Relay and Solenoid Driver
The MPQ2222A drives small 5V and 12V relays and solenoids directly from microcontroller outputs: each NPN element sinks up to 500mA continuously, far above typical 15-80mA signal-relay coil currents, and 40V VCEO withstands coil transients with an external flyback diode. Estimated: driving a 12V/30mA relay coil with roughly 0.3V saturation dissipates only about 9mW per device, negligible against the 650mW package rating. The four independent transistors let one DIP drive four channels of relay logic on a single prototyping board. Use a 1k-4.7k base resistor from 5V logic for reliable saturation, and keep coil current under 300mA per channel when several channels operate simultaneously to respect total package dissipation.
推荐
LED Driver and Indicator Circuits
With 500mA per channel and simple base-resistor drive, the MPQ2222A sinks LED strings, indicator lamps, and seven-segment digits from 3.3V or 5V logic. Estimated: switching a 100mA LED string with 0.3V collector-emitter saturation dissipates about 30mW, so even four simultaneous 100mA channels total roughly 120mW, comfortably within the 650mW package limit. The A-grade hFE guarantee of 100 or more means a 2-5mA base drive fully saturates the transistor from any MCU GPIO. The through-hole DIP package suits breadboard prototyping of multiplexed displays and status panels, and the pin-per-transistor layout keeps routing intuitive: base pin adjacent to the MCU row, collector pin to the LED cathode row.
推荐
Legacy Equipment Repair and Rework
The MPQ2222A is a preferred repair part for vintage industrial controls, test equipment, and audio gear that used Motorola-original MPQ2222A or MPQ2222 quad arrays in 14-pin DIP sockets. Central Semiconductor continues the exact TO-116 footprint and 2N2222A-grade electricals, so a PBFREE replacement drops into the original socket without PCB modification. The four-independent-transistor architecture means a failed channel can be verified by diode-testing base-emitter and base-collector junctions on each triplet of pins (1/2/3, 4/5/6, 8/9/10, 11/12/13). Keeping MPQ2222A in stock covers repair of driver boards across decades of equipment that standardized on this array.
推荐
Education and Prototyping
Four matched transistors in one breadboard-friendly DIP make the MPQ2222A ideal for electronics education and rapid prototyping: students can build astable multivibrators, differential pairs, current mirrors, and H-bridge halves without juggling loose TO-92 cans. The 0.1-inch pitch drops directly into solderless breadboards and wire-wrap boards, and the datasheet's per-pin ordering (B-C-E triplets) teaches package reading. With 40V and 500mA ratings, experiments can run at realistic 12V industrial levels safely, and the approximately 200MHz fT demonstrates both audio amplification and RF oscillation on one device. Because the four die share a silicon process, matched-pair lab measurements (VBE matching, beta tracking) give repeatable classroom results.
推荐
Switching Logic and Level Interfaces
The MPQ2222A implements discrete NOR/NAND gates, level shifters, and open-collector bus interfaces where 40V collector standoff is needed on 5V-logic systems. Each transistor's 40V VCEO allows interfacing 24V industrial sensor lines to low-voltage microcontrollers: the collector ties to the 24V domain through a pull-up, the base is driven from the 5V side through a resistor divider, giving a robust non-inverting or inverting translator. Estimated: with a 2.2k pull-up to 24V, saturated collector current is about 10mA, dissipating only a few milliwatts per channel. Four channels per package suit parallel status buses, stepper phase drivers, and PLC-style input cards built in repairable through-hole form.
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推荐产品汇总
工程参考数据： MPQ2222A ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MPQ2222A PBFREE | MPQ2222 | MPQ2222A (Motorola) |
|---|---|---|---|---|
| Package | TO-116 (14-pin DIP) | TO-116 (14-pin DIP) - same | TO-116 (14-pin DIP) - same | TO-116 (14-pin DIP) - same |
| Brand | Central Semiconductor | Central Semiconductor | Central Semiconductor | onsemi (legacy Motorola) |
| Configuration | 4 x independent NPN | 4 x independent NPN | 4 x independent NPN | 4 x independent NPN |
| VCEO | 40 V | 40 V | 40 V | 40 V |
| Collector Current | 500 mA | 500 mA | 500 mA | 500 mA |
| Package Power Dissipation | 650 mW | 650 mW | 650 mW | 650 mW |
| hFE Grade | A-grade (2N2222A limits) | A-grade (2N2222A limits) | Standard grade (wider limits) | A-grade (2N2222A limits) |
| Lifecycle Status | Active | Active | Active | Obsolete (legacy source) |
关键差异点
- A-grade gain guarantee （对比 MPQ2222)
- Active production source for a legacy type （对比 MPQ2222A (Motorola))
- Four independent transistors vs one （对比 2N2222A)
设计说明
Budget power against the 650mW total package rating, not a per-transistor figure. Estimated: one transistor dissipating 500mA at 1V VCE would be 500mW alone - fine short-term, but add ambient derating above 25C per the manufacturer datasheet curve. If multiple channels drive heavy loads simultaneously, spread dissipation by inserting small emitter resistors (2.2-10 ohm) to force current sharing and reduce per-die stress.
Always fit a flyback diode across relay and solenoid coils; the 40V VCEO rating does not make the transistors avalanche-proof against unclamped inductive kickback from a 12V coil, which can exceed 100V. Also confirm the A-grade hFE requirement: substituting the standard MPQ2222 in a design biased for guaranteed 2N2222A beta may shift saturation and gain margins in low-base-drive circuits.
For through-hole prototyping, use a DIP-14 socket to allow easy substitution between MPQ2222A, MPQ2222, and future replacement grades without desoldering. Keep collector traces carrying near-500mA currents at least 0.5mm wide (1oz copper) and place flyback diodes physically close to the load, not the array, to contain inductive switching loops and reduce EMI.
合规信息
PBFREE suffix denotes Central Semiconductor lead-free construction; Mouser lists the part as NPN 75Vcbo 40Vceo 6.0Vebo 500mA 650mW. REACH, halogen-free, and conflict-minerals declarations not stated in retrieved data.
