UCC21521ADWR - 5.7kVrms 4A/6A Isolated Gate Driver | TI
Артикул: UCC21521ADWR ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $3.44 | $3,44 |
| 10 | $3.17 | $31,70 |
| 100 | $2.89 | $289,00 |
| 500 | $2.64 | $1.320,00 |
| 1.000 | $2.41 | $2.410,00 |
UCC21521ADWR Обзор
An isolated gate driver is a power management IC that transfers control signals across a galvanic isolation barrier, allowing a controller on the low-voltage side to switch power transistors such as MOSFETs, IGBTs, and SiC or GaN devices connected to a high-voltage rail. Isolated gate drivers sit within the broader gate driver and power management IC hierarchy and are essential wherever the gate-referenced potential differs from the logic-referenced potential.
Key differentiating specifications include the 5.7-kVRMS reinforced isolation rating per the capacitive isolation technology, the asymmetric 4-A source / 6-A sink drive strength that favors fast turn-off for switch protection, and a wide supply range with an 8-V UVLO threshold suited to SiC MOSFET gate driving. The enable pin supports system-level safety interlocks, and the dead-time control eases half-bridge design.
Architecturally, the UCC21521 uses a capacitive isolation barrier with on-chip signal isolation across a silicon-dioxide dielectric, providing high CMTI performance for switching noise immunity. The two output channels share a common topology with independent inputs, supporting inverting or non-inverting configurations depending on the ordering variant and input polarity.
Typical applications include motor drives and industrial inverters, solar string inverters and MPPT power stages, and on-board chargers or DC-DC power stages in industrial power systems. The 4-A/6-A drive strength matches medium-power SiC and IGBT modules where fast gate charge delivery reduces switching losses.
Design consideration: verify the input-side supply (VCCI) logic threshold matches the MCU or DSP bank voltage, and route the high-voltage side with adequate creepage and clearance per the reinforced-isolation footprint of the DW-16 package.
This page synthesizes verified distributor pricing, drop-in alternatives, and practical design notes not consolidated in the manufacturer datasheet alone.
Аналоги без доработки для UCC21521ADWR — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с UCC21521ADWR (тот же форм-фактор и посадочное место) — отличается по Package, Configuration, Disable Function, Isolation Technology, Dead Time.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
UCC21520DW
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
UCC21521QDWQRQ1
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
UCC21550ADWR
✅ Прямая замена✓ В наличии
$1.19 / шт.
Открыть даташит →UCC21550BDWR
✅ Прямая замена✓ В наличии
$0.88 / шт.
Открыть даташит →UCC21550AQDWKRQ1
✅ Прямая замена✓ В наличии
$2.2 / шт.
Открыть даташит →UCC21521ADWR Максимальные параметры и электрические характеристики
| Product Type | Isolated dual-channel gate driver |
| Каналы | 2 |
| Peak Source Current | 4 A |
| Peak Sink Current | 6 A |
| Isolation Rating | 5700 Vrms (reinforced) |
| Isolation Technology | Capacitive coupling |
| UVLO Threshold Option | 8 V |
| Вывод разрешения | Yes |
| Input Configuration | Dual input, inverting / non-inverting |
| Driver Configuration | Dual low-side, dual high-side, or half-bridge |
| Dead Time Control | Programmable |
| Корпус | 16-SOIC (DW) |
| Тип монтажа | Surface Mount |
| Статус RoHS | Compliant |
| Marking Code | UCC21521A |
Руководство по цоколевке UCC21521ADWR в корпусе 16-soic (dw)
Цоколевка для UCC21521ADWR (корпус 16-soic (dw)). Этот силовой прибор имеет выводы затвора, стока и истока. Для неполяризованных корпусов обратитесь к техническому описанию производителя для точной ориентации вывода 1 и деталей посадочного места. Типичные применения включают проектирование источников питания, управление двигателями и коммутацию нагрузки.
Нет подробных данных о распиновке для UCC21521ADWR.
Обратитесь к даташиту для полной конфигурации выводов.
Типичное применение
UCC21521ADWR подходит для 6 применениеs: Industrial Motor Drives, Solar String Inverters, On-Board Chargers and DC-DC Converters, SiC MOSFET Power Stages, Industrial Power Supplies and UPS, Battery Management and High-Voltage Discharge Circuits.
Industrial Motor Drives
Three-phase motor inverters place the UCC21521ADWR between the MCU or DSP PWM outputs and the gate terminals of six power switches. Its 4-A source / 6-A sink peak current delivers the gate charge of medium-power IGBT and SiC modules quickly, reducing switching losses at typical 5-20 kHz PWM frequencies, while the 5700-Vrms reinforced isolation barrier separates the control electronics from the DC bus. The programmable dead-time feature helps prevent shoot-through in each half-bridge leg, and the enable pin supports safe-torque-off interlocks. Placed close to the module gate pins with a minimized gate loop, the 6-A sink capability suppresses dv/dt-induced spurious turn-on in hard-switching legs.
Рекомендуется
Solar String Inverters
In solar string inverters, the UCC21521ADWR drives the half-bridge power stages of the DC-DC boost and DC-AC inverter stages, where the power side floats hundreds of volts above the MPPT controller ground. The 5700-Vrms reinforced capacitive isolation provides the safety barrier required between the user-accessible control side and the PV bus. Its 8-V UVLO option is well matched to SiC MOSFET gate drives, preventing operation in the high-RDS(on) region during startup. The 6-A sink current reduces turn-off losses in high-frequency (50-100 kHz) boost stages, directly improving conversion efficiency and thermal headroom in sealed outdoor enclosures.
Рекомендуется
On-Board Chargers and DC-DC Converters
OBC and auxiliary DC-DC power stages in industrial and vehicle systems use the UCC21521ADWR to drive LLC and phase-shifted full-bridge primaries. The reinforced isolation rating supports the safety separation between the grid-referenced primary and the battery-referenced secondary, and the capacitive isolation barrier's high CMTI tolerates the steep dv/dt of resonant topologies operating at 100-500 kHz. The asymmetric 4-A/6-A drive minimizes turn-off tail losses of the primary switches. Designers should keep the secondary gate loop short and use matched VDDA/VDDB decoupling to exploit the full sink current without gate ringing at high frequency.
Рекомендуется
SiC MOSFET Power Stages
Silicon-carbide MOSFETs require gate drivers with UVLO thresholds above ~8 V and fast turn-off to avoid operation in elevated-RDS(on) regions and to limit dv/dt-induced shoot-through. The UCC21521ADWR's 8-V UVLO option and 6-A sink peak current align with these requirements: the strong pull-down discharges the SiC gate quickly, shortening the overlap of high voltage and high current at turn-off. Its capacitive isolation maintains signal integrity across the high dv/dt transients typical of SiC half-bridges. The enable pin allows a hardware fault interlock to disable both gates within microseconds, complementing software-level protection in the controller.
Рекомендуется
Industrial Power Supplies and UPS
High-power AC-DC rectifier front ends and UPS inverter stages benefit from the UCC21521ADWR's universal configuration: the same device serves as a dual low-side driver for PFC stages or a half-bridge driver for the inverter bridge. The 5700-Vrms reinforced isolation satisfies the reinforced insulation requirement between mains-referenced power circuitry and user-accessible control logic in UPS and telecom rectifier architectures. The programmable dead-time control eases design of PFC half-bridge legs, while the 4-A/6-A drive keeps switching losses manageable at 20-100 kHz, reducing heatsink size in fanless or constrained-airflow industrial power systems.
Рекомендуется
Battery Management and High-Voltage Discharge Circuits
High-voltage battery systems use contactors, pre-charge relays, and active discharge MOSFETs whose gates sit on the high-voltage domain while the BMS controller resides on the low-voltage domain. The UCC21521ADWR bridges this barrier with 5700-Vrms reinforced isolation, and its enable pin allows the BMS to open the gate-drive path immediately on a fault detection interrupt from current-sense amplifiers. The 6-A sink current ensures rapid gate discharge so that discharge or pre-charge switches turn off decisively under fault conditions. The dual channels allow one device to control both a main contactor driver and a pre-charge path from a single isolated component.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для UCC21521ADWR — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | UCC21520DW | UCC21521QDWQRQ1 | UCC21550ADWR | UCC21550BDWR |
|---|---|---|---|---|---|
| Package | SOIC-16 (DW) | SOIC-16 (DW) - same | SOIC-16 (DW) - same | SOIC-16 (DW) - same | SOIC-16 (DW) - same |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Isolation Rating | 5700 Vrms (reinforced) | 5700 Vrms | 5700 Vrms | 5700 Vrms | 5700 Vrms |
| Enable Pin | Yes | Yes | Yes | Yes | Yes |
| UVLO Option | 8 V | 8 V (A-option) | 8 V (A-option) | A-option UVLO | B-option UVLO |
| Automotive Grade (AEC-Q100) | No | No | Yes | No | No |
Ключевые отличия
- Asymmetric 4-A source / 6-A sink drive for fast turn-off (против UCC21520DW)
- Enable pin for system-level safety interlock (против UCC21550ADWR)
- Automotive drop-in path on identical footprint (против UCC21521QDWQRQ1)
Заметки по проектированию
Preserve the reinforced isolation barrier in layout: do not route any copper traces or planes in the area directly beneath the isolation barrier region of the SOIC-16 (DW) footprint, and maintain the package's creepage and clearance envelope to the board. Keep primary-side VCCI decoupling (0.1 uF ceramic close to the pin plus a bulk capacitor) tight to the input-side supply pins. Group the input-side INA/INB/EN traces away from the output-side gate traces to prevent capacitive coupling across the board.
Minimize the secondary-side gate loop to exploit the 6-A sink current: place the driver as close as possible to the power switch, use wide gate traces (at least 20-30 mil for typical currents), and route the gate return (source or Kelvin-emitter) as a dedicated trace rather than sharing the power ground path. Estimate: with 10 nH of loop inductance and a 6-A/20-ns sink edge, induced L di/dt ringing can reach several volts - a dedicated Kelvin return is essential to avoid spurious turn-on in half-bridge legs.
Verify the ordering suffix polarity: the UCC21521 family includes inverting and non-inverting input variants, and swapping an inverting variant into a non-inverting design will invert the PWM logic and can cause shoot-through at power-up. Also confirm that the 8-V UVLO (A-option) matches the secondary gate-drive supply rail - a driver powered from a 12-V rail with 8-V UVLO works for SiC, but a rail that sags below UVLO during transients will interrupt gate drive mid-pulse. Add hysteresis margin on the bias rail.
Estimated: gate-drive average dissipation is P = Qg * fsw * (VDD - 0) per channel; for a SiC MOSFET with 60-nC gate charge at 100 kHz and 15-V drive, this is roughly 90 mW per channel, negligible in the SOIC-16 package. The dominant loss is usually in the internal pull-up/pull-down resistance during switching transitions - keep fsw within datasheet thermal guidelines and use the datasheet theta-JA with the DW-16 package for verification above approximately 200 kHz.
Информация о соответствии
RoHS compliance per TI product family standard. Not AEC-Q100 qualified - select UCC21521Q variants for automotive applications. REACH and halogen-free status not stated in verified data.