UCC21521ADWR - 5.7kVrms 4A/6A Isolated Gate Driver | TI
부품 번호: UCC21521ADWR ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $3.44 | $3.44 |
| 10 | $3.17 | $31.70 |
| 100 | $2.89 | $289.00 |
| 500 | $2.64 | $1,320.00 |
| 1,000 | $2.41 | $2,410.00 |
UCC21521ADWR 개요
An isolated gate driver is a power management IC that transfers control signals across a galvanic isolation barrier, allowing a controller on the low-voltage side to switch power transistors such as MOSFETs, IGBTs, and SiC or GaN devices connected to a high-voltage rail. Isolated gate drivers sit within the broader gate driver and power management IC hierarchy and are essential wherever the gate-referenced potential differs from the logic-referenced potential.
Key differentiating specifications include the 5.7-kVRMS reinforced isolation rating per the capacitive isolation technology, the asymmetric 4-A source / 6-A sink drive strength that favors fast turn-off for switch protection, and a wide supply range with an 8-V UVLO threshold suited to SiC MOSFET gate driving. The enable pin supports system-level safety interlocks, and the dead-time control eases half-bridge design.
Architecturally, the UCC21521 uses a capacitive isolation barrier with on-chip signal isolation across a silicon-dioxide dielectric, providing high CMTI performance for switching noise immunity. The two output channels share a common topology with independent inputs, supporting inverting or non-inverting configurations depending on the ordering variant and input polarity.
Typical applications include motor drives and industrial inverters, solar string inverters and MPPT power stages, and on-board chargers or DC-DC power stages in industrial power systems. The 4-A/6-A drive strength matches medium-power SiC and IGBT modules where fast gate charge delivery reduces switching losses.
Design consideration: verify the input-side supply (VCCI) logic threshold matches the MCU or DSP bank voltage, and route the high-voltage side with adequate creepage and clearance per the reinforced-isolation footprint of the DW-16 package.
This page synthesizes verified distributor pricing, drop-in alternatives, and practical design notes not consolidated in the manufacturer datasheet alone.
드롭인 대체품: UCC21521ADWR — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: UCC21521ADWR (동일 폼 팩터 및 풋프린트) — 차이점: Package, Configuration, Disable Function, Isolation Technology, Dead Time.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
UCC21520DW
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
UCC21521QDWQRQ1
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
UCC21550ADWR
✅ 드롭인✓ 재고 있음
$1.19 / 개
데이터시트 보기 →UCC21550BDWR
✅ 드롭인✓ 재고 있음
$0.88 / 개
데이터시트 보기 →UCC21550AQDWKRQ1
✅ 드롭인✓ 재고 있음
$2.2 / 개
데이터시트 보기 →UCC21521ADWR 최대 정격 & 전기적 특성
| Product Type | Isolated dual-channel gate driver |
| 채널 수 | 2 |
| Peak Source Current | 4 A |
| Peak Sink Current | 6 A |
| Isolation Rating | 5700 Vrms (reinforced) |
| Isolation Technology | Capacitive coupling |
| UVLO Threshold Option | 8 V |
| 인에이블 핀 | Yes |
| Input Configuration | Dual input, inverting / non-inverting |
| Driver Configuration | Dual low-side, dual high-side, or half-bridge |
| Dead Time Control | Programmable |
| 패키지 | 16-SOIC (DW) |
| 실장 유형 | Surface Mount |
| RoHS 상태 | Compliant |
| Marking Code | UCC21521A |
UCC21521ADWR 16-soic (dw) 핀 구성 가이드
UCC21521ADWR(16-soic (dw) 패키지)의 핀 구성입니다. 이 전력 소자는 게이트, 드레인, 소스 단자를 갖추고 있습니다. 비편향 패키지의 경우 정확한 핀 1 방향과 풋프린트 세부 정보는 제조사 데이터시트를 참조하십시오. 일반적인 응용 분야로는 전원 공급 장치 설계, 모터 구동, 부하 스위칭이 있습니다.
다음에 대한 상세 핀아웃 데이터 없음: UCC21521ADWR.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
UCC21521ADWR 적합 용도: 6 애플리케이션s: Industrial Motor Drives, Solar String Inverters, On-Board Chargers and DC-DC Converters, SiC MOSFET Power Stages, Industrial Power Supplies and UPS, Battery Management and High-Voltage Discharge Circuits.
Industrial Motor Drives
Three-phase motor inverters place the UCC21521ADWR between the MCU or DSP PWM outputs and the gate terminals of six power switches. Its 4-A source / 6-A sink peak current delivers the gate charge of medium-power IGBT and SiC modules quickly, reducing switching losses at typical 5-20 kHz PWM frequencies, while the 5700-Vrms reinforced isolation barrier separates the control electronics from the DC bus. The programmable dead-time feature helps prevent shoot-through in each half-bridge leg, and the enable pin supports safe-torque-off interlocks. Placed close to the module gate pins with a minimized gate loop, the 6-A sink capability suppresses dv/dt-induced spurious turn-on in hard-switching legs.
추천
Solar String Inverters
In solar string inverters, the UCC21521ADWR drives the half-bridge power stages of the DC-DC boost and DC-AC inverter stages, where the power side floats hundreds of volts above the MPPT controller ground. The 5700-Vrms reinforced capacitive isolation provides the safety barrier required between the user-accessible control side and the PV bus. Its 8-V UVLO option is well matched to SiC MOSFET gate drives, preventing operation in the high-RDS(on) region during startup. The 6-A sink current reduces turn-off losses in high-frequency (50-100 kHz) boost stages, directly improving conversion efficiency and thermal headroom in sealed outdoor enclosures.
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On-Board Chargers and DC-DC Converters
OBC and auxiliary DC-DC power stages in industrial and vehicle systems use the UCC21521ADWR to drive LLC and phase-shifted full-bridge primaries. The reinforced isolation rating supports the safety separation between the grid-referenced primary and the battery-referenced secondary, and the capacitive isolation barrier's high CMTI tolerates the steep dv/dt of resonant topologies operating at 100-500 kHz. The asymmetric 4-A/6-A drive minimizes turn-off tail losses of the primary switches. Designers should keep the secondary gate loop short and use matched VDDA/VDDB decoupling to exploit the full sink current without gate ringing at high frequency.
추천
SiC MOSFET Power Stages
Silicon-carbide MOSFETs require gate drivers with UVLO thresholds above ~8 V and fast turn-off to avoid operation in elevated-RDS(on) regions and to limit dv/dt-induced shoot-through. The UCC21521ADWR's 8-V UVLO option and 6-A sink peak current align with these requirements: the strong pull-down discharges the SiC gate quickly, shortening the overlap of high voltage and high current at turn-off. Its capacitive isolation maintains signal integrity across the high dv/dt transients typical of SiC half-bridges. The enable pin allows a hardware fault interlock to disable both gates within microseconds, complementing software-level protection in the controller.
추천
Industrial Power Supplies and UPS
High-power AC-DC rectifier front ends and UPS inverter stages benefit from the UCC21521ADWR's universal configuration: the same device serves as a dual low-side driver for PFC stages or a half-bridge driver for the inverter bridge. The 5700-Vrms reinforced isolation satisfies the reinforced insulation requirement between mains-referenced power circuitry and user-accessible control logic in UPS and telecom rectifier architectures. The programmable dead-time control eases design of PFC half-bridge legs, while the 4-A/6-A drive keeps switching losses manageable at 20-100 kHz, reducing heatsink size in fanless or constrained-airflow industrial power systems.
추천
Battery Management and High-Voltage Discharge Circuits
High-voltage battery systems use contactors, pre-charge relays, and active discharge MOSFETs whose gates sit on the high-voltage domain while the BMS controller resides on the low-voltage domain. The UCC21521ADWR bridges this barrier with 5700-Vrms reinforced isolation, and its enable pin allows the BMS to open the gate-drive path immediately on a fault detection interrupt from current-sense amplifiers. The 6-A sink current ensures rapid gate discharge so that discharge or pre-charge switches turn off decisively under fault conditions. The dual channels allow one device to control both a main contactor driver and a pre-charge path from a single isolated component.
추천
추천 제품 요약
엔지니어링 참조 데이터: UCC21521ADWR — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | UCC21520DW | UCC21521QDWQRQ1 | UCC21550ADWR | UCC21550BDWR |
|---|---|---|---|---|---|
| Package | SOIC-16 (DW) | SOIC-16 (DW) - same | SOIC-16 (DW) - same | SOIC-16 (DW) - same | SOIC-16 (DW) - same |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Isolation Rating | 5700 Vrms (reinforced) | 5700 Vrms | 5700 Vrms | 5700 Vrms | 5700 Vrms |
| Enable Pin | Yes | Yes | Yes | Yes | Yes |
| UVLO Option | 8 V | 8 V (A-option) | 8 V (A-option) | A-option UVLO | B-option UVLO |
| Automotive Grade (AEC-Q100) | No | No | Yes | No | No |
주요 차별점
- Asymmetric 4-A source / 6-A sink drive for fast turn-off (vs UCC21520DW)
- Enable pin for system-level safety interlock (vs UCC21550ADWR)
- Automotive drop-in path on identical footprint (vs UCC21521QDWQRQ1)
설계 노트
Preserve the reinforced isolation barrier in layout: do not route any copper traces or planes in the area directly beneath the isolation barrier region of the SOIC-16 (DW) footprint, and maintain the package's creepage and clearance envelope to the board. Keep primary-side VCCI decoupling (0.1 uF ceramic close to the pin plus a bulk capacitor) tight to the input-side supply pins. Group the input-side INA/INB/EN traces away from the output-side gate traces to prevent capacitive coupling across the board.
Minimize the secondary-side gate loop to exploit the 6-A sink current: place the driver as close as possible to the power switch, use wide gate traces (at least 20-30 mil for typical currents), and route the gate return (source or Kelvin-emitter) as a dedicated trace rather than sharing the power ground path. Estimate: with 10 nH of loop inductance and a 6-A/20-ns sink edge, induced L di/dt ringing can reach several volts - a dedicated Kelvin return is essential to avoid spurious turn-on in half-bridge legs.
Verify the ordering suffix polarity: the UCC21521 family includes inverting and non-inverting input variants, and swapping an inverting variant into a non-inverting design will invert the PWM logic and can cause shoot-through at power-up. Also confirm that the 8-V UVLO (A-option) matches the secondary gate-drive supply rail - a driver powered from a 12-V rail with 8-V UVLO works for SiC, but a rail that sags below UVLO during transients will interrupt gate drive mid-pulse. Add hysteresis margin on the bias rail.
Estimated: gate-drive average dissipation is P = Qg * fsw * (VDD - 0) per channel; for a SiC MOSFET with 60-nC gate charge at 100 kHz and 15-V drive, this is roughly 90 mW per channel, negligible in the SOIC-16 package. The dominant loss is usually in the internal pull-up/pull-down resistance during switching transitions - keep fsw within datasheet thermal guidelines and use the datasheet theta-JA with the DW-16 package for verification above approximately 200 kHz.
규정 준수 정보
RoHS compliance per TI product family standard. Not AEC-Q100 qualified - select UCC21521Q variants for automotive applications. REACH and halogen-free status not stated in verified data.