UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
MPN: UCC21550BDWR ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.26 | $1.26 |
| 10 | $1.18 | $11.80 |
| 100 | $1.05 | $105.00 |
| 500 | $0.95 | $475.00 |
| 1,000 | $0.88 | $880.00 |
Drop-in alternatives for UCC21550BDWR — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
UCC21550ADWR
✅ Drop-In✓ In Stock
$1.19 / Unit
View Datasheet →UCC21550BQDWRQ1
✅ Drop-In✓ In Stock
$2.45 / Unit
View Datasheet →UCC21550AQDWKRQ1
✅ Drop-In✓ In Stock
$2.2 / Unit
View Datasheet →UCC21540DW
✅ Drop-In📋 Reference alternative (not in catalog)
UCC21520DW
✅ Drop-In📋 Reference alternative (not in catalog)
UCC21550BDWR Maximum Ratings & Electrical Characteristics
| Output Configuration | Dual-channel (dual low-side, dual high-side, or half-bridge) |
| Peak Source Current | 4 A |
| Peak Sink Current | 6 A |
| Isolation Type | Capacitive coupling, reinforced isolation |
| Isolation Voltage | 5000 Vrms |
| CMTI (Common-Mode Transient Immunity) | > 125 V/ns |
| VDD Output Supply Range | Up to 25 V |
| UVLO Threshold | 8 V (VDD UVLO) |
| Programmable Dead Time | Yes |
| Disable Function | Yes |
| Junction Temperature Range | -40 C to +150 C |
| Package | 16-SOIC (DW) |
| Mounting Type | Surface Mount |
| Driven Devices | Power MOSFET, SiC MOSFET, GaN FET, IGBT |
UCC21550BDWR 16-soic (dw) Pin Configuration Guide
Complete pinout information for UCC21550BDWR (16-soic (dw) package). This power device features gate, drain, and source terminals. For non-polarized packages, refer to the manufacturer datasheet for exact pin 1 orientation and footprint details. Common applications include power supply design, motor driving, and load switching.
No detailed pinout data available for UCC21550BDWR.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
UCC21550BDWR is suitable for 6 applications: Solar String and Micro Inverters, Industrial Motor Drives, Server and Telecom Power Supplies, EV On-Board Chargers and DC-DC Converters, GaN-Based High-Frequency Power Stages, UPS and Energy Storage Systems.
Solar String and Micro Inverters
In solar inverters, the UCC21550BDWR drives the SiC or IGBT half-bridge switches of the DC-DC boost and DC-AC inverter stages, where its 5000 Vrms reinforced isolation separates the low-voltage control electronics from the high-voltage PV bus. The CMTI above 125 V/ns keeps outputs stable during the fast switching edges typical of SiC stages switching hundreds of volts, and the programmable dead time prevents cross-conduction losses that would otherwise erode conversion efficiency. Configured as a half-bridge driver, a single UCC21550 device drives both the high-side and low-side switches of one bridge leg, reducing BOM count. Placing the device close to the gate resistors with dedicated VDD decoupling minimizes gate-loop inductance and switching ringing, improving EMI performance at the 16-50 kHz switching frequencies common in string inverters.
Recommended
Industrial Motor Drives
Three-phase industrial motor drives use six power switches organized as three half-bridge legs, and the UCC21550BDWR serves as the isolated interface between the motor-control MCU and each leg's IGBT or SiC modules. Its dual-channel architecture covers one complete leg per device, and the 6 A peak sink current ensures fast, clean IGBT turn-off, reducing tail-current switching losses at inverter switching frequencies of 5-20 kHz. The 8 V VDD UVLO holds the gates low during bias startup, protecting the power stage from partial-drive operation that would cause device failure. The wide -40 C to +150 C junction range accommodates the elevated ambient temperatures inside sealed drive enclosures. Using the disable pin allows safe fault shutdown when overcurrent or overtemperature events are detected by the system controller.
Recommended
Server and Telecom Power Supplies
High-density server and telecom AC-DC power supplies operating from 400 V PFC buses rely on the UCC21550BDWR to drive the boost and LLC half-bridge power stages with reinforced isolation to SELV outputs. The driver's low propagation delay and tight channel-to-channel matching help maintain symmetrical duty cycles in the LLC converter, which directly affects output ripple and regulation accuracy. Because these supplies switch at hundreds of kilohertz with SiC or superjunction MOSFETs, the > 125 V/ns CMTI prevents common-mode glitches from the fast-switching power node from corrupting driver outputs. The compact 16-SOIC package fits the constrained board area of power modules, and the programmable dead time lets designers tune the LLC dead time to achieve zero-voltage switching across the load range, maximizing efficiency toward 80 PLUS Titanium targets.
Recommended
EV On-Board Chargers and DC-DC Converters
Electric-vehicle on-board chargers (OBC) and auxiliary DC-DC converters bridge the 400-800 V traction battery to the 12 V low-voltage system, requiring reinforced isolated gate drivers with automotive-grade reliability. The UCC21550BQDWRQ1, the automotive-qualified member of the same family in the same 16-SOIC footprint, is selected for these designs while allowing a common layout with the commercial UCC21550BDWR for industrial derivatives. The driver's 4 A/6 A output stage handles the large gate charges of 1200 V SiC MOSFETs used in totem-pole PFC and CLLC resonant stages, and the programmable dead time supports the synchronous rectification schemes these topologies demand. The -40 C to +150 C junction range covers underhood and underbody temperature environments, and the disable function supports system-level functional-safety shutdown paths.
Recommended
GaN-Based High-Frequency Power Stages
GaN FET power stages switching at 500 kHz to 2 MHz impose the most demanding requirements on gate drivers: sub-10 ns propagation delays, strong sink current for fast turn-off, and extreme CMTI because switching nodes slew at several hundred volts per nanosecond. The UCC21550BDWR's > 125 V/ns CMTI rating and 6 A peak sink current directly address these needs, while its VDD supply range up to 25 V accommodates the 5-6 V gate-drive windows of e-mode GaN devices with appropriate external regulation, including split-rail biasing for negative off-state gate voltage. Configured as a dual low-side driver, one package drives both switches of a bridge leg in applications such as Class-D audio amplifiers, LiDAR pulse drivers, and high-frequency LLC converters where GaN's low switching losses justify the system complexity.
Recommended
UPS and Energy Storage Systems
Uninterruptible power supplies and battery energy storage systems combine bidirectional DC-AC conversion with high-voltage battery buses, and the UCC21550BDWR provides the reinforced isolated drive for their IGBT and SiC bridge stages. The 5000 Vrms isolation rating supports the creepage and clearance requirements between the battery domain and the AC grid domain, and the capacitive isolation barrier offers long-term reliability with isolation lifetime exceeding 40 years per TI material data cited by distributors. The programmable dead time is essential during bidirectional mode transitions, preventing shoot-through when the power flow direction changes rapidly. The disable pin integrates with the UPS supervisory controller to isolate the power stage within microseconds during grid faults, and the wide junction temperature range tolerates the thermally cyclic environments typical of backup power installations.
Recommended
Recommended Products Summary
Engineering reference data for UCC21550BDWR — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | UCC21550ADWR | UCC21550BQDWRQ1 | UCC21540DW | UCC21520DW |
|---|---|---|---|---|---|
| Package | 16-SOIC (DW) | 16-SOIC (DW) - same | 16-SOIC (DW) - same | 16-SOIC (DW) - same | 16-SOIC (DW) - same |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Peak Source / Sink Current | 4 A / 6 A | 4 A / 6 A | 4 A / 6 A | [DATA_NEEDED] | 2.5 A / 5 A |
| Isolation Grade | Reinforced (B), 5000 Vrms | Standard (A) | Reinforced (B), automotive | [DATA_NEEDED] | [DATA_NEEDED] |
| CMTI | > 125 V/ns | > 125 V/ns | > 125 V/ns | [DATA_NEEDED] | [DATA_NEEDED] |
| Programmable Dead Time | Yes | Yes | Yes | No | [DATA_NEEDED] |
| Automotive Qualified (Q1) | No | No | Yes | No | [DATA_NEEDED] |
| Unit Price (qty 1) | $1.26 (as of 2026-09-03) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Programmable dead time on-chip (vs UCC21540DW)
- Reinforced isolation grade (B) (vs UCC21550ADWR)
- 6 A peak sink current for fast turn-off (vs UCC21520DW)
Design Notes
Place a low-ESR ceramic decoupling capacitor (typically 1 uF plus 0.1 uF) directly across VDDA/VSSA and VDDB/VSSB on the output side, and a local bypass on VCCI on the input side. Keep the gate-drive loop (driver output, gate resistor, MOSFET gate, source return) as small as possible to limit parasitic inductance; every nH of loop inductance adds ringing proportional to di/dt. Route the INA/INB traces away from the high-dv/dt switching node and reference them to the isolated input-side ground to preserve signal integrity across the barrier.
Estimated: gate-drive power per channel is Qg * fsw * VDD; for a SiC MOSFET with Qg = 60 nC, fsw = 100 kHz, and VDD = 18 V, the driver must supply approximately 108 mW per channel plus its own quiescent consumption. Size the isolated bias supply (e.g., a fly-buck or push-pull auxiliary) with margin for both channels and verify the VDD UVLO (8 V) never trips during transient loads. Use separate bootstrap or isolated rails per channel in half-bridge configuration and confirm bootstrap refresh at minimum duty cycles.
Do not leave the disable (DIS) pin floating - tie it to its inactive level per the datasheet to avoid undefined driver states. When using the programmable dead-time function, set the dead time longer than the worst-case switching time of the power device (including turn-off delay and current tail in IGBTs) to guarantee shoot-through immunity across temperature. In SiC applications, always verify the effective CMTI at your actual bus voltage; the > 125 V/ns rating is a minimum and system-level dv/dt with fast gate resistors can exceed expected values.
Compliance Information
Compliance status not present in retrieved data; verify RoHS/REACH status on the TI product page for UCC21550BDWR. The automotive Q1 variant (UCC21550BQDWRQ1) covers automotive qualification needs.
