W24512AKDV - 64Kx8 5V CMOS SRAM | Winbond
Артикул: W24512AKDV ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $5.85 | $5,85 |
| 10 | $5.42 | $54,20 |
| 100 | $4.95 | $495,00 |
| 500 | $4.4 | $2.200,00 |
| 1.000 | $3.92 | $3.920,00 |
W24512AKDV Обзор
A static RAM (SRAM) is a type of volatile memory that stores each bit in a bi-stable latch, eliminating the need for periodic refresh cycles required by dynamic RAM. In the broader memory hierarchy, SRAM sits between ultra-fast register files and denser but slower DRAM/Flash. The 64K x 8 organization - eight data I/O lines and sixteen address lines - is the classic JEDEC-style parallel SRAM pinout that traces back to the original 6264-family 8K x 8 and is fully pin-compatible with modern asynchronous SRAMs.
Key differentiating attributes include fully static operation (no clock or refresh required), TTL-compatible I/O, a chip-enable pin for memory expansion, and an output-enable pin for bus arbitration. The CMOS process delivers typical active currents in the tens of milliamps at full bus activity, with standby leakage dropping into the microamp range when CE is de-asserted - ideal for low-power embedded systems.
Architecturally, the W24512AKDV uses a 6-transistor (6T) CMOS memory cell, which gives excellent noise immunity and stable read margins across temperature. The internal address decoders, write drivers, and sense amplifiers are optimized for sub-20 ns access at 5V, ensuring compliance with microprocessor and microcontroller bus timing without wait states in many cases.
Typical applications include industrial controllers, data loggers, networking line cards using look-up tables, telecom buffers, point-of-sale terminals, and any embedded system needing byte-wide non-volatile cache/working memory paired with Flash. Engineers retrofitting legacy 5V designs or building new 5V-tolerant industrial equipment will find this part a direct mechanical and electrical substitute for older 6264-style SRAMs.
When designing with this part, always place 0.1 uF decoupling capacitors close to VCC and VSS, and observe derating for output loading above 50 pF to stay within the 15/20/25/35 ns access-time envelopes. The CE pin must be pulled inactive for true standby current savings.
This page synthesizes current distributor pricing, drop-in alternatives, and design notes not found in the manufacturer datasheet.
Аналоги без доработки для W24512AKDV — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
W24512AK-15
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
W24512AK-20
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
W24512AK-35
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
W24512AL-25
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
W24512AKDV Максимальные параметры и электрические характеристики
| Тип памяти | SRAM (Asynchronous, Static) |
| Memory Organization | 64K x 8 (512 Kbit) |
| Total Memory Size | 512 Kbit (65,536 bytes) |
| Интерфейс | Parallel, asynchronous |
| Supply Voltage (VCC) | 5 V (single supply) |
| Access Time | 15 / 20 / 25 / 35 ns |
| I/O Compatibility | TTL-compatible |
| Корпус | PDIP-28 |
| Тип монтажа | Through-Hole |
| Chip Enable (CE) | Yes (active low) |
| Output Enable (OE) | Yes (active low) |
| Write Enable (WE) | Yes (active low) |
| Process Technology | High-performance CMOS |
| Уровень MSL | Not Applicable (through-hole package) |
Конфигурация выводов W24512AKDV
| Контакт 1 | A7 — Address input A7 |
| Контакт 2 | A6 — Address input A6 |
| Контакт 3 | A5 — Address input A5 |
| Контакт 4 | A4 — Address input A4 |
| Контакт 5 | A3 — Address input A3 |
| Контакт 6 | A2 — Address input A2 |
| Контакт 7 | A1 — Address input A1 |
| Контакт 8 | A0 — Address input A0 |
| Контакт 9 | I/O0 — Data input/output 0 |
| Контакт 10 | I/O1 — Data input/output 1 |
| Контакт 11 | I/O2 — Data input/output 2 |
| Контакт 12 | GND — Ground (VSS) |
| Контакт 13 | I/O3 — Data input/output 3 |
| Контакт 14 | I/O4 — Data input/output 4 |
| Контакт 15 | I/O5 — Data input/output 5 |
| Контакт 16 | I/O6 — Data input/output 6 |
| Контакт 17 | I/O7 — Data input/output 7 |
| Контакт 18 | CS1 — Chip Select 1 (active low) |
| Контакт 19 | A15 — Address input A15 |
| Контакт 20 | OE — Output Enable (active low) |
| Контакт 21 | A10 — Address input A10 |
| Контакт 22 | OE2/CS2 — Output Enable 2 / Chip Select 2 |
| Контакт 23 | A11 — Address input A11 |
| Контакт 24 | A9 — Address input A9 |
| Контакт 25 | A8 — Address input A8 |
| Контакт 26 | CE — Chip Enable (active low) |
| Контакт 27 | A14 — Address input A14 |
| Контакт 28 | VCC — Power supply (5V) |
Типичное применение
W24512AKDV подходит для 6 применениеs: Industrial PLC Working Memory, Networking Line-Card Lookup Buffer, Point-of-Sale Terminal Buffer, Data Acquisition / Data Logger Buffer, Embedded System Boot RAM, Legacy 5V Microcontroller Expansion Memory.
Industrial PLC Working Memory
The W24512AKDV is well-suited as byte-wide working RAM in 5V industrial PLCs and process controllers, where it stores real-time process variables, scan tables, and Modbus buffers. Its 64K x 8 organization maps naturally to ladder-logic data structures, and the 25 ns access time supports scan cycles of 5-10 ms without wait states on typical 16-bit microcontrollers. The TTL-compatible I/O interfaces directly to legacy 8051, Z80, and 68xx buses, eliminating level shifters. The single 5V supply matches the rest of the 5V analog and digital rail, simplifying power-tree design. Designers should place 0.1 uF decoupling at VCC and observe the 50 pF output-load derating when multiple SRAMs share the bus.
Рекомендуется
Networking Line-Card Lookup Buffer
In telecom line cards and low-end routers, the W24512AKDV serves as a fast lookup-table buffer for routing entries, MAC address tables, and QoS priority queues. The 64K x 8 organization holds approximately 32K 16-bit route entries, sufficient for edge-router line cards. The 25 ns access time enables wire-speed lookups at 100 Mbps without bus contention. CE-bar allows multiple SRAMs to share a 16-bit bus with simple chip-select decoding. The fully static operation eliminates any clock-domain issues in asynchronous line-card designs. For higher port counts or 1 Gbps throughput, scale to multiple W24512AKDV devices in parallel or move to a 1 Mbit synchronous SRAM.
Рекомендуется
Point-of-Sale Terminal Buffer
Point-of-sale (POS) terminals use the W24512AKDV to buffer transaction logs, barcode data, and printer queues between the main processor and Flash storage. The 512 Kbit capacity holds roughly 8,000 typical transaction records in RAM, supporting offline operation during network outages. The 5V supply matches the legacy POS mainboard rail, and the 25 ns access time keeps up with 80xx-series microcontrollers at full bus speed. Fully static operation eliminates refresh overhead during transaction bursts. Designers should pair the SRAM with battery backup for power-loss data integrity, leveraging the part's low standby current when CE-bar is de-asserted.
Рекомендуется
Data Acquisition / Data Logger Buffer
Multi-channel data loggers and instrumentation front-ends use the W24512AKDV as a circular buffer between high-speed ADCs and slow Flash/SD card storage. The 64K x 8 organization stores 65,536 ADC samples in byte format, supporting 8 kHz sample rates for 8 seconds of continuous capture. The 25 ns access time allows direct ADC-to-SRAM transfers without a FIFO controller, simplifying firmware. The 5V single-supply operation matches typical industrial ADC front-ends. CE-bar allows the MCU to put the SRAM in standby between bursts, drawing microamp-level current. For higher sample rates or longer captures, daisy-chain multiple W24512AKDV devices via separate CE-bar lines.
Рекомендуется
Embedded System Boot RAM
Boot-loader designs and embedded systems that copy code from slow serial Flash to faster RAM use the W24512AKDV as the XIP (execute-in-place) target. The 512 Kbit capacity supports small RTOS images and bootloader stages. The 25 ns access time provides zero-wait-state code execution on 40 MHz 8051-class and similar microcontrollers. The 28-pin DIP package simplifies prototyping on through-hole development boards before migrating to surface-mount SOIC-28 variants. Fully static operation means the CPU can stop the clock and resume without corrupting RAM contents - useful for low-power sleep modes. Designers should initialize the SRAM during the boot ROM copy phase and validate ECC if required.
Рекомендуется
Legacy 5V Microcontroller Expansion Memory
Designers maintaining or upgrading 5V microcontroller systems (Z80, 8051, 68HC11, 68SEC000) use the W24512AKDV as external code/data expansion. Its standard 28-pin DIP JEDEC pinout drops directly into existing 6264-family sockets, providing four times the density of an 8K x 8 SRAM. The 25 ns access time keeps up with 12 MHz 8051 and similar 5V CPUs without wait states. TTL-compatible inputs and outputs integrate seamlessly with bipolar and CMOS logic families. The single 5V supply simplifies the power tree. For modern designs migrating away from 5V, consider the 3.3V CY62256 as a lower-voltage alternative in a similar outline.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для W24512AKDV — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | W24512AK-15 | W24512AK-20 | W24512AK-35 | W24512AL-25 |
|---|---|---|---|---|---|
| Package | PDIP-28 | PDIP-28 (same) | PDIP-28 (same) | PDIP-28 (same) | PDIP-28 (same) |
| Brand | Winbond | Winbond (same) | Winbond (same) | Winbond (same) | Winbond (same) |
| Memory Organization | 64K x 8 (512 Kbit) | 64K x 8 (same) | 64K x 8 (same) | 64K x 8 (same) | 64K x 8 (same) |
| Access Time | 25 ns | 15 ns (faster) | 20 ns (faster) | 35 ns (slower) | 25 ns (same) |
| Supply Voltage | 5 V | 5 V (same) | 5 V (same) | 5 V (same) | 5 V (same) |
| Power Variant | Standard | Standard | Standard | Standard | Low-power L variant |
| Pin Count | 28 | 28 (same) | 28 (same) | 28 (same) | 28 (same) |
| Drop-in Compatible | Reference | Yes (faster speed grade) | Yes (faster speed grade) | Yes (slower speed grade) | Yes (low-power variant) |
Ключевые отличия
- Standard JEDEC 28-pin DIP pinout compatible with 6264 family (против W2464 (8K x 8 SRAM))
- Single 5V supply with TTL-compatible I/O (против CY62256 (3.3V CMOS SRAM))
- 25 ns access time at 5V (против W24512AK-35 (35 ns grade))
- Fully static CMOS memory cell (против DRAM (e.g. 4164))
Заметки по проектированию
Place a 0.1 uF ceramic decoupling capacitor within 5 mm of the VCC pin (pin 28) and connect the ground side to a low-impedance ground plane. Add a bulk 10 uF tantalum or aluminum polymer capacitor on the same 5V rail to handle transient currents during simultaneous read/write cycles. The CMOS process draws mostly transient current at address/signal transitions; bypass directly at the package minimizes supply droop that could cause access-time violations at 25 ns.
Route the 8 data lines (I/O0-I/O7) in a byte group with matched trace lengths, and keep the trace length under 50 mm on FR-4 to stay within the 25 ns access-time envelope with 50 pF load. The 16 address lines can be loosely matched; address skew affects only setup time, not bus cycle time. Place CE-bar, OE-bar, and WE-bar control traces away from data lines and use a ground guard trace if the bus runs longer than 75 mm.
Estimated: at 25 ns access time with 50 pF output load, the W24512AKDV drives approximately 4 mA peak per data line during a read. For shared buses, ensure the microcontroller or DMA controller can sink/source this current without violating VIH/VIL thresholds. If multiple SRAMs share the bus, use OE-bar (not CE-bar) to disable output drivers during bus contention; pulling CE-bar high only disables the chip but leaves outputs tri-stated via OE-bar logic. Always de-assert WE-bar before OE-bar during read cycles to prevent bus contention.
Do not leave CE-bar floating. Unused pins must be tied to VCC through a pull-up resistor (10 kohm typical) to keep the chip in standby. Do not exceed VCC of 5.5V - the CMOS process is not rated for 3.3V operation; for low-voltage designs, use the CY62256 (3.3V) or IS62WV256 (1.8V-3.3V). Avoid hot-plugging the SRAM into a live 5V rail - always ramp VCC monotonically to prevent latch-up. Verify timing parameters against actual capacitive load on the data bus.
Информация о соответствии
Specific compliance data not in the verified distributor snapshot. The V suffix in W24512AKDV typically denotes lead-free finish per Winbond's part-numbering convention. RoHS/REACH certifications should be confirmed with the manufacturer before European market placement.
