5CSEBA2U19A7N vs 5CSEBA4U19A7N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng 5CSEBA2U19A7N sa pamamagitan ng Altera at 5CSEBA4U19A7N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Altera
5CSEBA2U19A7N - Cyclone V SE SoC FPGA 25K LE, A7 Automotive | Altera
5CSEBA2U19A7N ✓ NakahandaPagsanggunian na paghahambing
| Parametro | 5CSEBA2U19A7N | 5CSEBA4U19A7N |
|---|---|---|
| Brand | Altera | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | Cyclone V SE SoC FPGA | Cyclone V SE SoC FPGA |
| Device Variant | 5CSEA2 (U19 device) | — |
| Logic Elements | 25,000 | 40 K |
| Process Technology | 28 nm low-power | — |
| HPS Processor | Dual ARM Cortex-A9 MPCore with CoreSight | — |
| HPS Maximum Frequency | 700 MHz | — |
| Core Voltage (VCCINT) | 1.1 V | — |
| Temperature Grade | Automotive A7 | — |
| AEC-Q100 | Qualified | — |
| Packhaging | 484-UBGA (U19), 19x19 mm | 484-UBGA (U19), 19x19 mm, 1.0 mm pitch |
| Uri ng Pagpapasok | Surface Mount (FBGA) | Surface Mount (BGA) |
| User I/O Pins | 161 | — |
| Memory | Embedded SRAM + DDR3/LPDDR2 controller (HPS) | — |
| DSP Blocks | Variable-precision, embedded multiplier/accumulator | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | [DATA_NEEDED: MSL level] | 3 (168 hours) |
| Lead-Free | Yes | — |
| Hard Processor System | — | Dual ARM Cortex-A9 MPCore with CoreSight |
| Adaptive Logic Modules | — | [DATA_NEEDED: ALM count] |
| Embedded Memory | — | 3.4 Mbits (M9K) |
| DSP Blocks (18x18 Multipliers) | — | 224 |
| PLLs | — | [DATA_NEEDED: PLL count] |
| HPS Maximum Application Clock | — | 925 MHz |
| Memory Interfaces | — | DDR3, DDR3L, LPDDR2 (via HPS); soft DDR3/2 in FPGA |
| User I/O | — | 161 |
| Temperature ng Junction na Operasyon | — | -40C to +125C (automotive) / -40C to +100C (industrial) |
| Process Node | — | TSMC 28 nm low-power |
| Core Voltage | — | 1.1 V (typical) |