AIMBG120R010M1XTMA1 vs BSF134N10NJ3GXUMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng AIMBG120R010M1XTMA1 sa pamamagitan ng Infineon at BSF134N10NJ3GXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
AIMBG120R010M1XTMA1 AIMBG120R010M1XTMA1 - 1200V 205A 8.7mΩ SiC MOSFET | Infineon

AIMBG120R010M1XTMA1 - 1200V 205A 8.7mΩ SiC MOSFET | Infineon

AIMBG120R010M1XTMA1 ✓ Nakahanda
Infineon
BSF134N10NJ3GXUMA1 BSF134N10NJ3GXUMA1 - 100V OptiMOS N-Ch MOSFET, 9A/40A | Infineon

BSF134N10NJ3GXUMA1 - 100V OptiMOS N-Ch MOSFET, 9A/40A | Infineon

BSF134N10NJ3GXUMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro AIMBG120R010M1XTMA1 BSF134N10NJ3GXUMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolSiC™ G1 Automotive SiC Trench MOSFET —
Technology Silicon Carbide (SiC) Trench MOSFET Trench-gate OptiMOS planar
Channel Type N-Channel —
Drain-Source Voltage (VDS) 1200 V 100 V
Continuous Drain Current (ID, Tc) 205 A —
On-Resistance RDS(on), typ 8.7 mΩ —
Power Dissipation (PD, Tc) 882 W —
Packhaging PG-TO263-7 (TO-263-7 / D2PAK-7) surface mount MG-WDSON-2 (CanPAK M)
Temperature ng Junction na Operasyon -55°C to +175°C —
Automotive Qualification AEC-Q101 —
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 7 + Tab —
Tindminan RoHS Compliant Compliant
Lead-Free Yes —
Level ng MSL [DATA_NEEDED: MSL level per JEDEC J-STD-020] [DATA_NEEDED: MSL rating]
Series — OptiMOS 100 V
FET Type — N-Channel
Continuous Drain Current (ID) at TA=25°C — 9 A
Continuous Drain Current (ID) at TC=25°C — 40 A
Power Dissipation (PD) at TA=25°C — 2.2 W
Power Dissipation (PD) at TC=25°C — 43 W
Configuration — Single with built-in diode
Terminal Position — Bottom
Terminal Finish — Silver Nickel
Hanay ng Temperature na Operasyon — -55°C to +150°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet]
Gate Charge (Qg) — [DATA_NEEDED: Qg value]
RDS(on) at VGS=10V — [DATA_NEEDED: RDS(on) max value]
Body Diode Reverse Recovery — [DATA_NEEDED: trr value]

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