AS4C512M16D4-75BIN vs MT40A512M16JY-07EAIT:B Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng AS4C512M16D4-75BIN sa pamamagitan ng Alliance Memory at MT40A512M16JY-07EAIT:B sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Alliance Memory
AS4C512M16D4-75BIN - 8Gbit DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4-75BIN ✓ NakahandaMicron Technology
MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron
MT40A512M16JY-07EAIT:B ✓ NakahandaPagsanggunian na paghahambing
| Parametro | AS4C512M16D4-75BIN | MT40A512M16JY-07EAIT:B |
|---|---|---|
| Brand | Alliance Memory | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 8 Gbit | 8 Gbit |
| Memory Organization | 512M x 16 | — |
| Clock Frequency | 1.333 GHz | 1.33 GHz |
| Access Time | 18 ns | — |
| Write Cycle Time | 15 ns | — |
| Volte ng Pagbibigay | 1.2 V | — |
| Packhaging | 96-FBGA (7.5x13) | 96-FBGA (8x14) |
| Temperature na Operasyon | -40°C to +95°C | — |
| Uri ng Pagpapasok | Surface Mount | — |
| Interface | POD | Parallel |
| Rate ng Data | 2666 Mbps | 2666 MT/s |
| Bilang ng Pins | 96 | — |
| Tindminan RoHS | Compliant | — |
| Mga Karakteristika | Auto self-refresh, auto precharge, asynchronous reset, output enable, CRC, data mask, write leveling, dynamic ODT, ZQ calibration | — |
| Organisasyon | — | 512M x 16 |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Voltage | — | 2.5V, -125mV, +250mV |
| Hanay ng Temperature na Operasyon | — | -40°C to +105°C (AIT grade) |
| Refresh Time | — | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| I/O Type | — | 1.2V pseudo open-drain |
| VREFDQ | — | On-die, internal, adjustable |
| AEC-Q100 | — | Qualified (AIT suffix) |
| RoHS | — | Compliant |