AT25DF641A-SH-B vs AT25DF641A-SH-T Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng AT25DF641A-SH-B sa pamamagitan ng Renesas Electronics at AT25DF641A-SH-T sa pamamagitan ng Renesas Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Renesas Electronics
AT25DF641A-SH-B - 64Mbit SPI Flash, 2.7-3.6V, 100MHz SOIC-8 | Renesas
AT25DF641A-SH-B ✓ NakahandaRenesas Electronics
AT25DF641A-SH-T - 64Mbit SPI/Quad SPI NOR Flash, SOIC-8 | Renesas
AT25DF641A-SH-T NrndPagsanggunian na paghahambing
| Parametro | AT25DF641A-SH-B | AT25DF641A-SH-T |
|---|---|---|
| Brand | Renesas Electronics | Renesas Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | NRND |
| Uri ng Memory | Non-volatile NOR Flash | NOR Flash |
| Memory Density | 64 Mbit (8 MB) | — |
| Organisasyon | 8M x 8 bit | — |
| Interface | SPI (Serial Peripheral Interface) | SPI (Single/Dual I/O), Serial Peripheral Interface compatible |
| SPI Modes | Mode 0 and Mode 3 | — |
| Maximum SPI Clock | 100 MHz | — |
| Dual-I/O Support | Yes (Dual Output Read) | — |
| Supply Voltage (VCC) | 2.7 V to 3.6 V (single supply) | 2.7 V to 3.6 V (single supply) |
| Page Size | 256 bytes | — |
| Sector Erase Size | 4 KB | — |
| Block Erase Sizes | 32 KB and 64 KB | — |
| Temperature na Operasyon | -40 C to +85 C | -40 C to +85 C (industrial) |
| Packhaging | 8-SOIC-W (Wide Body, 208 mil) | 8-SOIC (SOIC-W 208 mil, "SH") |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Packaging Form | Tube (-SH-B suffix) | — |
| Lead-Free / RoHS | Yes (Green, Pb-free) | — |
| Write Protection | Hardware WP#, software, and absolute protection | — |
| JEDEC ID | 0x1F (Atmel/Renesas) | — |
| Density | — | 64 Mbit (8 MB) |
| Clock Frequency (max) | — | 100 MHz (Single-I/O) |
| Page Size (program) | — | 256 bytes |
| Sector Erase Sizes | — | 4 KB / 32 KB / 64 KB uniform |
| Sector Architecture | — | Uniform 4 KB sectors |
| Deep Power-Down Current | — | [DATA_NEEDED: typical deep power-down current in uA] |
| Active Read Current | — | [DATA_NEEDED: active read current in mA] |
| Program/Erase Endurance | — | [DATA_NEEDED: endurance cycles] |
| Data Retention | — | [DATA_NEEDED: data retention years] |
| Write-Protect Pin | — | Yes (/WP) |
| Hold Pin | — | Yes (/HOLD) |
| JEDEC ID Read | — | Yes |
| Level ng MSL | — | 3 (per JEDEC J-STD-020, typical for SOIC flash) |
| Tindminan RoHS | — | Compliant (Green) |
| Lead-Free | — | Yes |
| Katayuan ng Lifecycle | — | Not Recommended for New Designs (NRND), see AT25QF641B-SHB-T |
| Packaging | — | Tape & Reel (suffix -T) |