BC817-40 vs BC817-40,215 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BC817-40 sa pamamagitan ng Nexperia at BC817-40,215 sa pamamagitan ng Nexperia. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Nexperia
BC817-40,215 BC817-40,215 - 45V 500mA NPN BJT SOT-23 | Nexperia

BC817-40,215 - 45V 500mA NPN BJT SOT-23 | Nexperia

BC817-40,215 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BC817-40 BC817-40,215
Brand Nexperia Nexperia
Kategorya Transistors Transistors
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor NPN Bipolar Junction Transistor (BJT) NPN Bipolar (BJT)
Packhaging SOT-23 (TO-236AB), 3 pins SOT-23 (TO-236AB)
Voltage ng Collector-Emitter (Vceo) 45 V 45 V
Voltage ng Collector-Base (Vcbo) 50 V 50 V
Voltage ng Emitter-Base (Vebo) 5 V 5 V
Continuous Collector Current (IC) 500 mA 500 mA
Peak Collector Current (ICM) [DATA_NEEDED: ICM value] [DATA_NEEDED: peak collector current]
Total Power Dissipation (Ptot) 310 mW —
DC Current Gain (hFE) - -40 bin 250 to 600 (at 100 mA, 1 V) —
Dalas ng Transisyon (ft) 100 MHz 100 MHz
Collector-Emitter Saturation Voltage (VCEsat) 700 mV max (at 500 mA, 50 mA base) —
Base-Emitter Voltage (VBE) [DATA_NEEDED: VBE typical] —
Temperature ng Junction na Operasyon -65 C to +150 C —
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 —
Tindminan RoHS Compliant —
Complementary PNP Part BC807-40 —
Pwersang Pinahihigpit (Ptot) — 250 mW
DC Current Gain (hFE) - BC817-40 bin — 250 to 600 (at IC=100mA, VCE=1V)
Hanay ng Temperature na Operasyon — -65 C to +150 C (TJ)
JEDEC Package Standard — TO-236AB
Pin Configuration — Pin 1 Base / Pin 2 Emitter / Pin 3 Collector
RoHS Compliance — Compliant
Lead-Free Reflow — Yes (260 C peak per J-STD-020)

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