BSC005N03LS5IATMA1 vs ISC011N04NM7VATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC005N03LS5IATMA1 sa pamamagitan ng Infineon at ISC011N04NM7VATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC005N03LS5IATMA1 BSC005N03LS5IATMA1 - 30V 433A OptiMOS 5 N-MOSFET | Infineon

BSC005N03LS5IATMA1 - 30V 433A OptiMOS 5 N-MOSFET | Infineon

BSC005N03LS5IATMA1 ✓ Nakahanda
Infineon
ISC011N04NM7VATMA1 ISC011N04NM7VATMA1 - 40V 1.1mΩ OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 - 40V 1.1mΩ OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC005N03LS5IATMA1 ISC011N04NM7VATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC005N03LS5IATMA1 —
Technology OptiMOS 5 (N-channel trench MOSFET) Trench MOSFET, silicon
Drain-Source Voltage (VDS) max 30 V —
Continuous Drain Current (ID) at Ta 42 A —
Continuous Drain Current (ID) at Tc 433 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed drain current value] —
On-Resistance RDS(on) max 0.55 mΩ at VGS = 10 V, ID = 50 A —
Gate-Source Threshold Voltage VGS(th) 2 V (typ) at VGS = 10 mA —
Power Dissipation at Ta 3 W —
Power Dissipation at Tc 188 W —
Temperature ng Junction na Operasyon -55 °C to +175 °C —
Packhaging PG-TDSON-8 FL (SuperSO8 5x6) PG-TDSON-8 (source-down)
Uri ng Pagpapasok Surface Mount Surface Mount
Polarity N-Channel —
Tindminan RoHS Compliant (per LCSC listing) —
Level ng MSL [DATA_NEEDED: MSL rating] MSL 1 (per JEDEC J-STD-020)
Product Family — OptiMOS 7 Power-Transistor
FET Type — N-Channel
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TA=25°C — 38 A
Continuous Drain Current (ID) at TC — 256 A
On-Resistance RDS(on) max @ VGS=10V — 1.1 mΩ
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 136 W
Gate Threshold Voltage (Vth) — Up to 3.2 V
Short-Circuit Withstand — Yes (current-limited)
Hanay ng Temperature na Operasyon — -55 °C to +175 °C (TJ)
RoHS Compliance — Compliant (per Infineon product page)

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