BSC005N03LS5IATMA1 vs ISC011N04NM7VATMA1 Comparison
Detailed side-by-side comparison of BSC005N03LS5IATMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC011N04NM7VATMA1
ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 β ActiveSpecification Comparison
| Parameter | BSC005N03LS5IATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.32 | $0.41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC005N03LS5IATMA1 | β |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | Trench MOSFET, silicon |
| Drain-Source Voltage (VDS) max | 30 V | β |
| Continuous Drain Current (ID) at Ta | 42 A | β |
| Continuous Drain Current (ID) at Tc | 433 A | β |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current value] | β |
| On-Resistance RDS(on) max | 0.55 mΞ© at VGS = 10 V, ID = 50 A | β |
| Gate-Source Threshold Voltage VGS(th) | 2 V (typ) at VGS = 10 mA | β |
| Power Dissipation at Ta | 3 W | β |
| Power Dissipation at Tc | 188 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TDSON-8 FL (SuperSO8 5x6) | PG-TDSON-8 (source-down) |
| Mounting Type | Surface Mount | Surface Mount |
| Polarity | N-Channel | β |
| RoHS Status | Compliant (per LCSC listing) | β |
| MSL Level | [DATA_NEEDED: MSL rating] | MSL 1 (per JEDEC J-STD-020) |
| Product Family | β | OptiMOS 7 Power-Transistor |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TA=25Β°C | β | 38 A |
| Continuous Drain Current (ID) at TC | β | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 1.1 mΞ© |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 136 W |
| Gate Threshold Voltage (Vth) | β | Up to 3.2 V |
| Short-Circuit Withstand | β | Yes (current-limited) |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C (TJ) |
| RoHS Compliance | β | Compliant (per Infineon product page) |