BSC011N03LSTATMA1 vs BSC050N04LSGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC011N03LSTATMA1 sa pamamagitan ng Infineon at BSC050N04LSGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | BSC011N03LSTATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | NRND | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 39 A | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current IDM] |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | 1.1 mOhm (typical 0.9 mOhm) | — |
| Gate-Source Threshold Voltage VGS(th) typ | 2 V | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Total Gate Charge (Qg) typ | 72 nC | — |
| Power Dissipation at TA=25C | 3 W | — |
| Power Dissipation at TC=25C | 115 W | — |
| Temperature ng Junction na Operasyon | -55C to +150C | — |
| Packhaging | PG-TDSON-8 FL (8-pin, exposed drain pad) | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | Trench MOSFET | OptiMOS 3 (trench MOSFET) |
| Configuration | Single with built-in diode | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | 1 |
| Tindminan RoHS | Compliant | Compliant |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current at 25C (ID, Ta) | — | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | — | 85 A |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 57 W |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Hanay ng Temperature na Operasyon | — | -55C to +150C |
| Avalanche Energy Rated | — | Yes (single-pulse avalanche) |