BSC014N04LSATMA1 vs BSC014N04LSIATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC014N04LSATMA1 sa pamamagitan ng Infineon at BSC014N04LSIATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon
BSC014N04LSATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC014N04LSATMA1 | BSC014N04LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Ta | 32 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| RDS(on) max at VGS=10 V | 1.4 mOhm | 1.4 mOhm |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 96 W | — |
| Gate-Source Voltage (VGS) max | 20 V | [DATA_NEEDED: VGS absolute maximum] |
| Hanay ng Temperature na Operasyon | -55C to +175C | -55 C to +150 C |
| Packhaging | SuperSO8 (TDSON-8 FL) 5x6 mm | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | Trench (OptiMOS 5, thin-wafer) | OptiMOS 5 (trench, thin-wafer) |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 (unlimited) | 1 (per JEDEC J-STD-020) |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 100 A |
| Continuous Drain Current (ID, Ta) | — | 31 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM rating] |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD, Tc) | — | 96 W |
| Power Dissipation (PD, Ta) | — | 2.5 W |
| Tradename | — | OptiMOS |