BSC019N04LSTATMA1 vs BSC014NE2LSIATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC019N04LSTATMA1 sa pamamagitan ng Infineon at BSC014NE2LSIATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC019N04LSTATMA1 BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon

BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon

BSC019N04LSTATMA1 ✓ Nakahanda
Infineon
BSC014NE2LSIATMA1 BSC014NE2LSIATMA1 - 25V OptiMOS N-Ch MOSFET 100A | Infineon

BSC014NE2LSIATMA1 - 25V OptiMOS N-Ch MOSFET 100A | Infineon

BSC014NE2LSIATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC019N04LSTATMA1 BSC014NE2LSIATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Technology OptiMOS 5 (N-channel trench MOSFET) N-Channel MOSFET (OptiMOS 25V)
Drain-Source Voltage (VDS) 40 V 25 V
Continuous Drain Current (ID, Tc=25C) 161 A —
Continuous Drain Current (ID, Ta=25C) 28 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed ID limit] —
On-Resistance RDS(on) max @ VGS=10V 1.9 mOhm —
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate Threshold Voltage VGS(th) typ 1.7 V —
Total Gate Charge Qg typ 85 nC —
Power Dissipation PD (Tc=25C) 94 W —
Hanay ng Temperature na Operasyon -55 C to +150 C —
Packhaging TDSON-8 (SuperSO8) 5x6 mm PG-TDSON-8-7 (SuperSO8)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 (unlimited) 1 (per JEDEC J-STD-020)
Tindminan RoHS Compliant Compliant
Lead-Free / Halogen-Free Yes / Yes —
Avalanche Rated Yes —
Gate-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID, Ta) — 33 A
Continuous Drain Current (ID, Tc) — [DATA_NEEDED: Tc condition rating]
Pulsed Drain Current (IDM, Tc) — 100 A
On-State Resistance RDS(on) — 1.4 mOhm (typ) at VGS = 10 V
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typ at VGS=10V]
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 74 W
Temperature ng Junction na Operasyon — -55 °C to +150 °C
Lead-Free — Yes

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