BSC019N04NSGATMA1 vs BSC014N04LSIATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC019N04NSGATMA1 sa pamamagitan ng Infineon at BSC014N04LSIATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC019N04NSGATMA1 BSC019N04NSGATMA1 - 40V 100A OptiMOS N-Ch MOSFET | Infineon

BSC019N04NSGATMA1 - 40V 100A OptiMOS N-Ch MOSFET | Infineon

BSC019N04NSGATMA1 ✓ Nakahanda
Infineon
BSC014N04LSIATMA1 BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon

BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon

BSC014N04LSIATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC019N04NSGATMA1 BSC014N04LSIATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor N-Channel MOSFET —
Technology OptiMOS (trench) OptiMOS 5 (trench, thin-wafer)
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at TC=25C 100 A —
Continuous Drain Current (ID) at TA=25C 30 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed IDM rating]
RDS(on) max at VGS=10V 2.5 mΩ —
RDS(on) typ at VGS=10V 1.9 mΩ —
Gate-Source Threshold (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at TA=25C 2.5 W —
Power Dissipation (PD) at TC=25C 125 W —
Hanay ng Temperature na Operasyon -55C to +150C -55 C to +150 C
Packhaging PG-TDSON-8-1 (TDSON-8 FL) PG-TDSON-8 FL (TDSON-8 with exposed drain pad)
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant Compliant
FET Type — N-Channel
Continuous Drain Current (ID, Tc) — 100 A
Continuous Drain Current (ID, Ta) — 31 A
RDS(on) max at VGS=10 V — 1.4 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS absolute maximum]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical]
Power Dissipation (PD, Tc) — 96 W
Power Dissipation (PD, Ta) — 2.5 W
Level ng MSL — 1 (per JEDEC J-STD-020)
Tradename — OptiMOS

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita