BSC030N03LSGATMA1 vs BSC0901NSATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC030N03LSGATMA1 sa pamamagitan ng Infineon at BSC0901NSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC030N03LSGATMA1 - 30V 100A 3mOhm OptiMOS 3 N-FET | Infineon
BSC030N03LSGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC030N03LSGATMA1 | BSC0901NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (Vdss) | 30 V | — |
| Continuous Drain Current (Id) @ Tc=25C | 100 A | — |
| Continuous Drain Current (Id) @ Ta=25C | 23 A | — |
| RDS(on) Max @ VGS=10V | 3 mOhm | — |
| RDS(on) Max @ VGS=4.5V | [DATA_NEEDED: typical RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (Vgs th) Typ | 2.2 V | — |
| Gate Charge (Qg) Typ @ VGS=15V | 55 nC | — |
| Output Charge (Qoss) | 66 pF | — |
| Input Capacitance (Ciss) Typ | 4.3 nF | — |
| Power Dissipation (Pd) @ Ta=25C | 2.5 W | — |
| Power Dissipation (Pd) @ Tc=25C | 69 W | — |
| Temperature ng Junction na Operasyon | -55C to +150C | — |
| Packhaging | PG-TDSON-8-1 (SuperSO8 5x6 mm) | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 | — |
| Avalanche Rated | Yes (100% tested) | — |
| Part Family | — | OptiMOS 30V |
| Technology | — | N-Channel Trench MOSFET (OptiMOS) |
| Drain-to-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Continuous Drain Current (ID) at Ta | — | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | — | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | — | 80 mJ |
| Power Dissipation (PD) at Tc | — | 69 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Hanay ng Temperature na Operasyon | — | -55C to +150C |
| Level ng Sensitivity sa Asid ng Moisture (MSL) | — | 1 |
| Built-in Body Diode | — | Yes |
| Configuration | — | Single N-Channel with Built-in Diode |