BSC030N03LSGATMA1 vs BSC0901NSATMA1 Comparison
Detailed side-by-side comparison of BSC030N03LSGATMA1 by Infineon and BSC0901NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC030N03LSGATMA1
BSC030N03LSGATMA1 - 30V 100A 3mOhm OptiMOS 3 N-FET | Infineon
BSC030N03LSGATMA1 β ActiveInfineon
BSC0901NSATMA1
BSC0901NSATMA1 - 30V 100A OptiMOS N-Channel MOSFET | Infineon
BSC0901NSATMA1 β ActiveSpecification Comparison
| Parameter | BSC030N03LSGATMA1 | BSC0901NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $0.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (Vdss) | 30 V | β |
| Continuous Drain Current (Id) @ Tc=25C | 100 A | β |
| Continuous Drain Current (Id) @ Ta=25C | 23 A | β |
| RDS(on) Max @ VGS=10V | 3 mOhm | β |
| RDS(on) Max @ VGS=4.5V | [DATA_NEEDED: typical RDS(on) at VGS=4.5V] | β |
| Gate Threshold Voltage (Vgs th) Typ | 2.2 V | β |
| Gate Charge (Qg) Typ @ VGS=15V | 55 nC | β |
| Output Charge (Qoss) | 66 pF | β |
| Input Capacitance (Ciss) Typ | 4.3 nF | β |
| Power Dissipation (Pd) @ Ta=25C | 2.5 W | β |
| Power Dissipation (Pd) @ Tc=25C | 69 W | β |
| Operating Junction Temperature | -55C to +150C | β |
| Package | PG-TDSON-8-1 (SuperSO8 5x6 mm) | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | β |
| Avalanche Rated | Yes (100% tested) | β |
| Part Family | β | OptiMOS 30V |
| Technology | β | N-Channel Trench MOSFET (OptiMOS) |
| Drain-to-Source Voltage (VDS) Max | β | 30 V |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| Continuous Drain Current (ID) at Ta | β | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | β | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | β | [DATA_NEEDED: RDS(on) typical] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th)] |
| Gate Charge (Qg) Typ | β | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | β | 80 mJ |
| Power Dissipation (PD) at Tc | β | 69 W |
| Power Dissipation (PD) at Ta | β | 2.5 W |
| Operating Temperature Range | β | -55C to +150C |
| Moisture Sensitivity Level (MSL) | β | 1 |
| Built-in Body Diode | β | Yes |
| Configuration | β | Single N-Channel with Built-in Diode |