BSC059N04LSGATMA1 vs ISC058N04NM5ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC059N04LSGATMA1 sa pamamagitan ng Infineon at ISC058N04NM5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC059N04LSGATMA1 BSC059N04LSGATMA1 - 40V 73A 5.9mOhm N-Ch OptiMOS 3 | Infineon

BSC059N04LSGATMA1 - 40V 73A 5.9mOhm N-Ch OptiMOS 3 | Infineon

BSC059N04LSGATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC059N04LSGATMA1 ISC058N04NM5ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Technology OptiMOS 3 (N-channel trench MOSFET) OptiMOS 5 trench MOSFET
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tc=25C) 73 A 63 A
Continuous Drain Current (ID, Ta=25C) 16 A 17 A
On-State Resistance RDS(on) max @ VGS=10V 5.9 mOhm —
Power Dissipation (Tc=25C) 50 W —
Power Dissipation (Ta=25C) 2.5 W —
Gate-Source Threshold Voltage VGS(th) 1.2 V to 2.0 V (typ) —
Total Gate Charge Qg [DATA_NEEDED: Qg total, typical nC] —
Hanay ng Temperature na Operasyon -55 C to +150 C -55C to +175C
Packhaging PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-TDSON-8 FL (SuperSO8 5x6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 (per JEDEC J-STD-020) —
Tindminan RoHS Compliant —
REACH Status Compliant —
Channel Type N-Channel —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5 40V Normal Level
Uri ng Transistor — N-Channel MOSFET
On-Resistance Rds(on) max @ VGS=10V, ID=31A — 5.8 mOhm
Gate Threshold Voltage VGS(th) typ — 3.4 V
Power Dissipation (TA=25C) — 3 W
Power Dissipation (TC=25C) — 42 W
RoHS Compliance — RoHS Compliant
MSL (Moisture Sensitivity Level) — MSL per JEDEC J-STD-020
Gate Drive Level — Normal Level (10V VGS recommended)

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