BSC060N10NS3GATMA1 vs ISC080N10NM6ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC060N10NS3GATMA1 sa pamamagitan ng Infineon at ISC080N10NM6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISC080N10NM6ATMA1 - 100V OptiMOS 6 N-Channel MOSFET | Infineon
ISC080N10NM6ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC060N10NS3GATMA1 | ISC080N10NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Ta) | 14.9 A | — |
| Continuous Drain Current (ID, Tc) | 90 A | — |
| On-Resistance RDS(on) Max @ VGS=10V | 6 mOhm | — |
| Power Dissipation (PD, Tc=25C) | 125 W | — |
| Gate Threshold Voltage VGS(th) | 2.0 V to 3.5 V | — |
| Temperature ng Junction na Operasyon | -55 C to +150 C | — |
| Technology | OptiMOS 3 (Trench MOSFET) | — |
| Packhaging | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8 FL (TDSON EP) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020, per datasheet) |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Wala sa Halogen | [DATA_NEEDED: halogen status] | Yes |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg value] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss value] | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS value] | — |
| Product Family | — | OptiMOS™ 6 100V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 100 V |
| Continuous Drain Current (ID) at Ta | — | 13 A |
| Continuous Drain Current (ID) at Tc | — | 75 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 100 W |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | — | 8.05 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 3.3 V at 36 µA |
| Hanay ng Temperature na Operasyon | — | -55°C to +175°C (TJ max, per datasheet) |
| Qualification | — | Industrial grade (per Infineon OptiMOS 6 100V family) |