BSC070N10NS5ATMA1 vs BSC0501NSIATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC070N10NS5ATMA1 sa pamamagitan ng Infineon at BSC0501NSIATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC070N10NS5ATMA1 BSC070N10NS5ATMA1 - 100V 7mOhm OptiMOS 5 N-MOSFET | Infineon

BSC070N10NS5ATMA1 - 100V 7mOhm OptiMOS 5 N-MOSFET | Infineon

BSC070N10NS5ATMA1 ✓ Nakahanda
Infineon
BSC0501NSIATMA1 BSC0501NSIATMA1 - 30V N-Ch OptiMOS 5 MOSFET 100A | Infineon

BSC0501NSIATMA1 - 30V N-Ch OptiMOS 5 MOSFET 100A | Infineon

BSC0501NSIATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC070N10NS5ATMA1 BSC0501NSIATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Technology OptiMOS 5 (N-channel trench) Trench-gate OptiMOS 5
Drain-Source Voltage (VDS) max 100 V —
Continuous Drain Current (ID) at TC=25C 80 A —
RDS(on) max @ VGS=10V 7 mOhm —
Gate-Source Voltage (VGS) max 20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg] [DATA_NEEDED: Qg typical]
Power Dissition at TC=25C (Ptot) 83 W —
Power Dissipation at TA=25C 2.5 W —
Hanay ng Temperature ng Junction na Operasyon -55 C to +150 C —
Packhaging PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TDSON-8-6 (SuperSO8)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Tindminan RoHS Compliant Compliant
Lead-Free Yes —
Typical Application Synchronous rectification in SMPS —
Manufacturer — Infineon
Product Family — OptiMOS 5 25V/30V
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta — 29 A
Continuous Drain Current (ID) at Tc — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Power Dissipation at Ta (PD) — 2.5 W
Power Dissipation at Tc (PD) — 50 W
Gate-Source Voltage (VGS) — ±20 V
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) max at 10V VGS]
Temperature ng Junction na Operasyon — -55C to +150C
Avalanche Rated — Yes

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