BSC072N08NS5ATMA1 vs BSC021N08NS5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC072N08NS5ATMA1 sa pamamagitan ng Infineon at BSC021N08NS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC072N08NS5ATMA1 - 80V 74A N-Channel OptiMOS 5 MOSFET | Infineon
BSC072N08NS5ATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | BSC072N08NS5ATMA1 | BSC021N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | BSC072N08NS5 (OptiMOS 5) | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS 5 | OptiMOS 5 (N-channel trench) |
| Drain-Source Voltage (VDS) Max | 80 V | — |
| Continuous Drain Current (ID) at Tc | 74 A | — |
| Drain-Source On-Resistance (RDS(on)) Max | 7.2 mOhm at VGS=10V | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 69 W | — |
| Packhaging | PG-TDSON-8-7 (SuperSO8 5x6 mm) | SuperSO8 5x6 (PG-TSON-8-3) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: full min/max operating Tj] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | MSL 1 (per JEDEC J-STD-020) |
| Tindminan RoHS | Compliant | Compliant (Pb-free) |
| Shipping Pack | Tape & Reel (ATMA1) | — |
| Standard Pack Quantity | 5000 | — |
| Part Number | — | BSC021N08NS5ATMA1 |
| Drain-Source Voltage (V_DS max) | — | 80 V |
| Continuous Drain Current (I_D, Tc=25°C) | — | 226 A |
| Continuous Drain Current (I_D, Tc=100°C) | — | 100 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max (V_GS=10 V) | — | 2.1 mΩ |
| Gate-Source Voltage V_GS max | — | ±20 V |
| Power Dissipation P_D (Tc=25°C) | — | 214 W |
| Temperature ng Junction na Operasyon | — | -55 °C to +175 °C |
| Total Gate Charge Q_G typ | — | [DATA_NEEDED: total gate charge] |
| R_thJC thermal resistance max | — | [DATA_NEEDED: R_thJC] |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| Delivery Form | — | Tape & Reel (T&R) |