BSC072N08NS5ATMA1 vs BSC021N08NS5ATMA1 比較
詳細並排比較 BSC072N08NS5ATMA1 由 Infineon 與 BSC021N08NS5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC072N08NS5ATMA1 | BSC021N08NS5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | BSC072N08NS5 (OptiMOS 5) | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Technology | OptiMOS 5 | OptiMOS 5 (N-channel trench) |
| Drain-Source Voltage (VDS) Max | 80 V | — |
| Continuous Drain Current (ID) at Tc | 74 A | — |
| Drain-Source On-Resistance (RDS(on)) Max | 7.2 mOhm at VGS=10V | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 69 W | — |
| 封裝 | PG-TDSON-8-7 (SuperSO8 5x6 mm) | SuperSO8 5x6 (PG-TSON-8-3) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | [DATA_NEEDED: full min/max operating Tj] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | — |
| MSL 等級 | [DATA_NEEDED: MSL rating] | MSL 1 (per JEDEC J-STD-020) |
| RoHS 狀態 | Compliant | Compliant (Pb-free) |
| Shipping Pack | Tape & Reel (ATMA1) | — |
| Standard Pack Quantity | 5000 | — |
| Part Number | — | BSC021N08NS5ATMA1 |
| Drain-Source Voltage (V_DS max) | — | 80 V |
| Continuous Drain Current (I_D, Tc=25°C) | — | 226 A |
| Continuous Drain Current (I_D, Tc=100°C) | — | 100 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max (V_GS=10 V) | — | 2.1 mΩ |
| Gate-Source Voltage V_GS max | — | ±20 V |
| Power Dissipation P_D (Tc=25°C) | — | 214 W |
| 工作接面溫度 | — | -55 °C to +175 °C |
| Total Gate Charge Q_G typ | — | [DATA_NEEDED: total gate charge] |
| R_thJC thermal resistance max | — | [DATA_NEEDED: R_thJC] |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| Delivery Form | — | Tape & Reel (T&R) |