BSC072N08NS5ATMA1 vs BSC059N04LS6ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC072N08NS5ATMA1 sa pamamagitan ng Infineon at BSC059N04LS6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC072N08NS5ATMA1 - 80V 74A N-Channel OptiMOS 5 MOSFET | Infineon
BSC072N08NS5ATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | BSC072N08NS5ATMA1 | BSC059N04LS6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Family | BSC072N08NS5 (OptiMOS 5) | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS 5 | OptiMOS 6 (N-channel MOSFET) |
| Drain-Source Voltage (VDS) Max | 80 V | — |
| Continuous Drain Current (ID) at Tc | 74 A | — |
| Drain-Source On-Resistance (RDS(on)) Max | 7.2 mOhm at VGS=10V | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 69 W | — |
| Packhaging | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: full min/max operating Tj] | -55C to +150C |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | — |
| Tindminan RoHS | Compliant | Compliant |
| Shipping Pack | Tape & Reel (ATMA1) | — |
| Standard Pack Quantity | 5000 | — |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TA=25C | — | 17 A |
| Continuous Drain Current (ID) at TC=25C | — | 49 A |
| Pulsed Drain Current (ID,pulse) at TC=25C | — | 59 A |
| On-Resistance RDS(on) max | — | 5.9 mOhm at VGS=10 V |
| Total Power Dissipation at TA=25C | — | 3 W |
| Total Power Dissipation at TC=25C | — | 38 W |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Diode Continuous Forward Current (IS) | — | 38 A at TC=25C |
| Diode Pulse Current (IS,pulse) | — | 236 A at TC=25C |
| Lead-Free | — | Yes |