BSS123NH6327XTSA1 vs IRFR3710ZTRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSS123NH6327XTSA1 sa pamamagitan ng Infineon at IRFR3710ZTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSS123NH6327XTSA1 BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 ✓ Nakahanda
Infineon
IRFR3710ZTRLPBF IRFR3710ZTRLPBF - 100V 42A HEXFET N-MOSFET DPAK | Infineon

IRFR3710ZTRLPBF - 100V 42A HEXFET N-MOSFET DPAK | Infineon

IRFR3710ZTRLPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSS123NH6327XTSA1 IRFR3710ZTRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Part Number BSS123NH6327XTSA1 —
Part Status Active —
FET Type N-Channel, Enhancement Mode N-Channel
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) 190 mA (Ta) —
Power Dissipation (PD) 500 mW (Ta) —
RDS(on) Max 6 Ω @ VGS = 10 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical and max VGS(th)] —
Gate-Source Voltage Max (VGS) ±20 V —
Packhaging PG-SOT23 (SOT-23-3) TO-252AA (DPAK), 3-pin (2+tab)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55 °C to +150 °C (junction) —
Qualification AEC-Q101 (automotive) —
RoHS Compliance Yes (Pb-free lead plating) —
Level ng MSL 1 (per JEDEC J-STD-020) —
Technology — MOSFET (Metal Oxide), HEXFET
Drain to Source Voltage (Vdss) — 100 V
Continuous Drain Current (Id) @ 25C (Tc) — 42 A
Max Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
RDS(on) max @ VGS=10V — 18 mOhm
Gate-Source Voltage (Vgs) max — [DATA_NEEDED: Vgs max rating]
Gate Threshold Voltage (Vgs(th) typ) — [DATA_NEEDED: Vgs(th)]
Total Gate Charge (Qg) — 69 nC
Power Dissipation (Pd) @ Tc=25C — 140 W
Avalanche Energy Rating (EAS) — 150 mJ
Maximum Junction Temperature — 175 C
Automotive Qualification — AEC-Q101 (per Lisleapex listing)
Configuration — Single with built-in diode
Temperature na Operasyon — -55 C to +175 C (TJ)
Tindminan RoHS — Compliant (Pb-free PBF suffix)

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