BSZ011NE2LS5IATMA1 vs ISC011N03L5SATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSZ011NE2LS5IATMA1 sa pamamagitan ng Infineon at ISC011N03L5SATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSZ011NE2LS5IATMA1 - 25V 1.1mΩ OptiMOS 5 N-MOSFET | Infineon
BSZ011NE2LS5IATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSZ011NE2LS5IATMA1 | ISC011N03L5SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 trench MOSFET |
| Drain-Source Voltage (VDS) | 25 V | 30 V |
| Continuous Drain Current (ID) at TA=25°C | 35 A | — |
| Continuous Drain Current (ID) at TC=25°C | 40 A | — |
| On-State Resistance RDS(on) max at VGS=10 V | 1.1 mΩ (typical, per datasheet title) | — |
| Power Dissipation at TA=25°C | 2.1 W | — |
| Power Dissipation at TC=25°C | 69 W | — |
| Gate Threshold Voltage VGS(th) | 1.0 V to 2.0 V (typical 1.5 V) | — |
| Gate Drive Voltage (recommended) | 4.5 V to 10 V | — |
| Hanay ng Temperature na Operasyon | -55°C to +150°C | — |
| Packhaging | PG-TSDSON-8-34 (PQFN 3.3x3.3 mm) | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Wala sa Halogen | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 / StrongIRFET 30 V |
| Uri ng Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) @ Ta=25C | — | 37 A |
| Continuous Drain Current (ID) @ Tc=25C | — | 100 A |
| Power Dissipation (PD) @ Ta=25C | — | 2.5 W |
| Power Dissipation (PD) @ Tc=25C | — | 96 W |
| Temperature na Operasyon | — | -55 C to +175 C (TJ) |
| Gate Drive | — | Logic-level compatible |