BSZ011NE2LS5IATMA1 vs ISC011N03L5SATMA1 比較
詳細並排比較 BSZ011NE2LS5IATMA1 由 Infineon 與 ISC011N03L5SATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSZ011NE2LS5IATMA1 | ISC011N03L5SATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 trench MOSFET |
| Drain-Source Voltage (VDS) | 25 V | 30 V |
| Continuous Drain Current (ID) at TA=25°C | 35 A | — |
| Continuous Drain Current (ID) at TC=25°C | 40 A | — |
| On-State Resistance RDS(on) max at VGS=10 V | 1.1 mΩ (typical, per datasheet title) | — |
| Power Dissipation at TA=25°C | 2.1 W | — |
| Power Dissipation at TC=25°C | 69 W | — |
| Gate Threshold Voltage VGS(th) | 1.0 V to 2.0 V (typical 1.5 V) | — |
| Gate Drive Voltage (recommended) | 4.5 V to 10 V | — |
| 工作溫度範圍 | -55°C to +150°C | — |
| 封裝 | PG-TSDSON-8-34 (PQFN 3.3x3.3 mm) | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| 無鹵素 | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 / StrongIRFET 30 V |
| 電晶體類型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) @ Ta=25C | — | 37 A |
| Continuous Drain Current (ID) @ Tc=25C | — | 100 A |
| Power Dissipation (PD) @ Ta=25C | — | 2.5 W |
| Power Dissipation (PD) @ Tc=25C | — | 96 W |
| 工作溫度 | — | -55 C to +175 C (TJ) |
| Gate Drive | — | Logic-level compatible |