BSZ018NE2LSIATMA1 vs BSZ036NE2LSATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSZ018NE2LSIATMA1 sa pamamagitan ng Infineon at BSZ036NE2LSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSZ018NE2LSIATMA1 BSZ018NE2LSIATMA1 - 25V N-Ch OptiMOS 1.8mOhm MOSFET | Infineon

BSZ018NE2LSIATMA1 - 25V N-Ch OptiMOS 1.8mOhm MOSFET | Infineon

BSZ018NE2LSIATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSZ018NE2LSIATMA1 BSZ036NE2LSATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ018NE2LSIATMA1 —
Channel Type N-Channel —
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (ID) at Ta=25C 22 A —
Continuous Drain Current (ID) at Tc=25C 40 A —
Pulsed Drain Current (IDM) 160 A —
Typical On-Resistance RDS(on) at VGS=10V 1.8 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Power Dissipation at Ta=25C 2.1 W —
Power Dissipation at Tc=25C 69 W —
Hanay ng Temperature na Operasyon -55 C to +150 C -55C to +150C
Packhaging PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) PG-TSDSON-8-FL (5x6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Technology OptiMOS (Infineon trench MOSFET) —
Tindminan RoHS Compliant Compliant
Lead-Free Yes Yes
Product Family — OptiMOS 25V
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at TA=25C — 16 A
Continuous Drain Current (ID) at TC=25C — 40 A
Power Dissipation (PD) at TA=25C — 2.1 W
Power Dissipation (PD) at TC=25C — 37 W
Configuration — Single
Level ng MSL — 1 (Unlimited)
Gate Drive — Logic-level compatible

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