BSZ036NE2LSATMA1 vs BSC050NE2LSATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSZ036NE2LSATMA1 sa pamamagitan ng Infineon at BSC050NE2LSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSZ036NE2LSATMA1 - 25V N-Channel OptiMOS Power MOSFET | Infineon
BSZ036NE2LSATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSZ036NE2LSATMA1 | BSC050NE2LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 25V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) at TA=25C | 16 A | — |
| Continuous Drain Current (ID) at TC=25C | 40 A | — |
| Power Dissipation (PD) at TA=25C | 2.1 W | — |
| Power Dissipation (PD) at TC=25C | 37 W | — |
| Packhaging | PG-TSDSON-8-FL (5x6 mm) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Configuration | Single | — |
| Hanay ng Temperature na Operasyon | -55C to +150C | -55C to +150C |
| Level ng MSL | 1 (Unlimited) | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Gate Drive | Logic-level compatible | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 25 V |
| Continuous Drain Current (I_D) at Tc=25C | — | 58 A |
| Continuous Drain Current (I_D) at Ta=25C | — | 39 A |
| R_DS(on) max at V_GS=10V | — | 5 mOhm |
| R_DS(on) typical at V_GS=10V | — | 4.2 mOhm |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| Power Dissipation at Ta=25C | — | 2.5 W |
| Power Dissipation at Tc=25C | — | 28 W |
| Technology | — | OptiMOS 25V (trench) |