BSZ068N06NSATMA1 vs ISC015N06NM5ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSZ068N06NSATMA1 sa pamamagitan ng Infineon at ISC015N06NM5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
ISC015N06NM5ATMA1 ISC015N06NM5ATMA1 - 60V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon

ISC015N06NM5ATMA1 - 60V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon

ISC015N06NM5ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSZ068N06NSATMA1 ISC015N06NM5ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Technology OptiMOS 5 (trench-gate) Trench MOSFET (OptiMOS 5)
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID, Tc) 40 A —
Continuous Drain Current (ID, Ta) [DATA_NEEDED: ID at Ta] —
On-Resistance RDS(on) max 6.8 mΩ @ VGS=10 V —
Power Dissipation (Ta) 2.1 W —
Power Dissipation (Tc) 46 W —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typ/min/max] —
Total Gate Charge Qg [DATA_NEEDED: Qg typ] —
Hanay ng Temperature na Operasyon -55 °C to +150 °C -55 C to +175 C
Packhaging PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) PG-TDSON-8 (PQFN 5x6) Drain-Down
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL MSL1 —
RoHS / Halogen-Free RoHS compliant, halogen-free —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5
Polarity / Channel Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TA=25C — 33 A
Pulsed Drain Current (IDM) at TC=25C — 259 A
On-Resistance RDS(on) typical at VGS=10V — 1.5 mOhm
Total Power Dissipation (TA) — 3 W
Total Power Dissipation (TC) — 188 W
Tindminan RoHS — Compliant
MSL (Moisture Sensitivity Level) — 1

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