BSZ0901NSIATMA1 vs BSZ0501NSIATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSZ0901NSIATMA1 sa pamamagitan ng Infineon at BSZ0501NSIATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSZ0501NSIATMA1 - 30V 40A OptiMOS 5 N-Channel MOSFET | Infineon
BSZ0501NSIATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSZ0901NSIATMA1 | BSZ0501NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ0901NSIATMA1 | BSZ0501NSIATMA1 |
| Series | OptiMOS 25V | — |
| Technology | OptiMOS trench N-channel MOSFET | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta=25C | 25 A | — |
| Continuous Drain Current (ID) at Tc=25C | 40 A | — |
| Power Dissipation (PD) at Ta=25C | 2.1 W | — |
| Power Dissipation (PD) at Tc=25C | 69 W | — |
| Packhaging | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) | PG-TSDSON-8-FL (3.3 x 3.3 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 8 | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | [DATA_NEEDED: Qg] |
| Hanay ng Temperature na Operasyon | -55 C to +150 C (typical MOSFET range) | [DATA_NEEDED: Tj max] |
| Packaging | Tape & Reel (ATMA1 suffix = 13-inch reel) | — |
| Tindminan RoHS | Compliant | Compliant |
| Product Family | — | OptiMOS 5 (25V/30V) |
| Drain-Source Voltage (Vds) | — | 30 V |
| Continuous Drain Current (Id) at TA=25C | — | 25 A |
| Continuous Drain Current (Id) at TC=25C | — | 40 A |
| Power Dissipation (Pd) at TA=25C | — | 2.1 W |
| Power Dissipation (Pd) at TC=25C | — | 50 W |
| Operating Mode | — | Enhancement Mode |
| Configuration | — | Single with built-in diode |
| Number of Terminals | — | 8 |
| JESD-609 Code | — | e3 (matte tin) |
| Level ng MSL | — | [DATA_NEEDED: MSL rating] |
| Rds(on) at Vgs=10V (typ) | — | [DATA_NEEDED: Rds(on) value] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th)] |