BSZ110N08NS5ATMA1 vs BSC117N08NS5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSZ110N08NS5ATMA1 sa pamamagitan ng Infineon at BSC117N08NS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | BSZ110N08NS5ATMA1 | BSC117N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 | — |
| Technology | OptiMOS 5 N-Channel Power MOSFET | OptiMOS 5 |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Tc | 40 A | — |
| On-Resistance RDS(on) max | 11 mΩ | — |
| Power Dissipation (PD) at Tc | 50 W | — |
| Packhaging | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) | PG-TDSON-8-7 (SuperSO8 5x6) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Polarity | N-Channel | — |
| Configuration | Single MOSFET | — |
| Gate Drive Voltage (VGS) | [DATA_NEEDED: VGS rating] | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | -55 C to +150 C (typical MOSFET junction) |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | [DATA_NEEDED: MSL level] | 1 |
| Part Number | — | BSC117N08NS5ATMA1 |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Continuous Drain Current (ID) max | — | 49 A (Tc) |
| On-State Resistance (RDS(on)) max | — | 11.7 mOhm |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 50 W |
| Bilang ng Pin | — | 8 |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Lead-Free | — | Yes |