CY14B101KA-ZS25XI vs CY14B101KA-ZS45XI Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng CY14B101KA-ZS25XI sa pamamagitan ng Infineon at CY14B101KA-ZS45XI sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | CY14B101KA-ZS25XI | CY14B101KA-ZS45XI |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | nvSRAM (Non-Volatile SRAM) with RTC | nvSRAM (nonvolatile SRAM) with RTC |
| Density | 1 Mbit (1024 kbit) | 1 Mbit (1049 kbits) |
| Organisasyon | 128K x 8 | 128K x 8 |
| Interface | Parallel | Parallel (SRAM-compatible) |
| Access Time | 25 ns | 45 ns |
| Volte ng Pagbibigay | 2.7 V to 3.6 V (nominal 3 V) | 3 V (2.7 V to 3.6 V range class) |
| Store Cycles | [DATA_NEEDED: store cycle endurance] | — |
| SRAM Read/Write Endurance | Unlimited | — |
| RTC | Yes, with alarm and external 32.768 kHz crystal | — |
| Automatic STORE | Yes, on power fail via VCAP | — |
| Packhaging | 44-TSOP II | 44-pin TSOP II |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | -40C to +85C (industrial) | -40C to +85C (industrial, XI suffix) |
| Technology | QuantumTrap non-volatile elements | CMOS with QuantumTrap nonvolatile elements |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL level] | — |
| Tindminan RoHS | RoHS compliant (per package marking ZS25XI) | Compliant |
| Data Retention | — | 20 years |
| Real-Time Clock | — | Yes, integrated with backup |
| Package Standard | — | MO-119, SOIC-family TSOP II outline |
| Endurance (SRAM reads/writes) | — | Unlimited |
| Nonvolatile Store Endurance | — | [DATA_NEEDED: store endurance cycles] |
| Active Supply Current | — | [DATA_NEEDED: ICC active] |
| Standby Current | — | [DATA_NEEDED: ISB standby] |