E3AD8G16A4-HR vs MT40A512M16JY-075E Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng E3AD8G16A4-HR sa pamamagitan ng ELIXIR/NANYA at MT40A512M16JY-075E sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT40A512M16JY-075E - 8Gb DDR4 SDRAM 512Mx16 | Micron
MT40A512M16JY-075E ✓ NakahandaPagsanggunian na paghahambing
| Parametro | E3AD8G16A4-HR | MT40A512M16JY-075E |
|---|---|---|
| Brand | ELIXIR/NANYA | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Organisasyon | 512M x 16 | 512M x 16 |
| Density | 8 Gb | — |
| Volte ng Pagbibigay | 1.2 V | — |
| Packhaging | TFBGA-96 | 96-FBGA (8x14) |
| Rate ng Data | 3200 MT/s | 2666 MT/s |
| Latensya ng CAS | 22 | — |
| Burst Length | 8 (BC4 optional) | — |
| Number of Banks | 16 (4 bank groups) | — |
| Refresh | Auto-refresh and self-refresh | — |
| Temperature na Operasyon | 0C to +95C (TCASE) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Speed Grade | DDR4-3200 | — |
| Laki ng Memory | — | 8 Gbit |
| Clock Frequency | — | 1.33 GHz |
| Supply Voltage (VDD/VDDQ) | — | 1.14V to 1.26V |
| VPP Voltage | — | 2.5V (-125mV, +250mV) |
| Interface | — | Parallel |
| Hanay ng Temperature na Operasyon | — | 0°C to +95°C (TC) |
| Refresh Time | — | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C |
| Tindminan RoHS | — | Compliant |
| Mga Karakteristika | — | Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC |
| I/O Type | — | 1.2V pseudo open-drain |