EP1K30FI256-2N vs EP1K10FI256-2N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP1K30FI256-2N sa pamamagitan ng Intel at EP1K10FI256-2N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP1K30FI256-2N | EP1K10FI256-2N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Obsolete | Huling Pagbili |
| Family | ACEX-1K | ACEX 1K |
| Typical Gates | 30,000 | 10,000 |
| Logic Elements (LEs) | 1,728 | — |
| Embedded RAM Bits | 24,576 | — |
| Maximum User I/O | 171 | — |
| Process Technology | 0.22 µm CMOS | 0.22 µm CMOS |
| Core Supply Voltage | 2.5 V | — |
| Maximum Internal Frequency | 200 MHz | 200 MHz |
| Number of LABs | 216 | — |
| Packhaging | 256-ball FineLine BGA (FBGA) | 256-Ball FBGA (FineLine BGA, 1.0 mm pitch) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Operating Temperature Grade | Industrial | — |
| Speed Grade | -2 | -2 |
| Programmable via | JTAG (IEEE 1149.1) | — |
| Uri ng Memory | Dual-port Embedded Array Block (EAB) | — |
| Logic Elements (Cells) | — | 576 |
| Embedded Array Blocks (EABs) | — | 3 (12,288 RAM bits) |
| Total RAM Bits | — | 12,288 |
| User I/O Count | — | 136 |
| Core Voltage | — | 2.5 V |
| Temperature na Operasyon | — | -40 °C to +85 °C (Industrial) |
| Configuration Modes | — | Passive Serial (PS), Active Serial (AS), JTAG |
| Tindminan RoHS | — | [DATA_NEEDED: RoHS compliance status] |
| Level ng MSL | — | [DATA_NEEDED: moisture sensitivity level] |