EP2C50U484C8N vs EP2C50U484C8 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP2C50U484C8N sa pamamagitan ng Intel at EP2C50U484C8 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP2C50U484C8N | EP2C50U484C8 |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Series | Cyclone II | — |
| Family | Cyclone II (90 nm) | Cyclone II |
| Logic Elements (LE) | 50,528 | — |
| Embedded Memory (M4K blocks) | 594,432 bits (129 M4K blocks) | — |
| Embedded 18x18 Multipliers | 86 | 86 |
| PLLs | 4 | 4 |
| User I/Os | 294 | — |
| I/O Banks | 8 | — |
| Speed Grade | C8 (commercial, mid-tier) | C8 (-8 speed bin) |
| Temperature na Operasyon | 0C to +85C (commercial) | 0 °C to +85 °C (Commercial) |
| Packhaging | 484-ball FBGA (UBGA-484) | 484-ball FineLine BGA (UBGA-484), 19 x 19 mm, 1.0 mm pitch |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Process Technology | 90 nm low-k CMOS | — |
| Configuration Methods | Passive Serial, Active Serial, JTAG | — |
| Memory Interface Support | DDR, DDR2, SDR SDRAM, QDRII SRAM | — |
| Tindminan RoHS | Compliant (lead-free) | — |
| Level ng MSL | 3 (168 hours) | — |
| Logic Elements | — | 50,528 |
| Logic Array Blocks (LABs) | — | 3,158 |
| Embedded Memory Bits | — | 594,432 |
| M4K RAM Blocks | — | 250 (4 Kbit each) |
| User I/O Pins | — | 294 (132 differential pairs max) |
| Process Node | — | 90 nm CMOS |
| Core Voltage | — | 1.15 V to 1.25 V |
| Configuration Modes | — | JTAG, Active Serial (AS), Active Parallel (AP), Passive Serial (PS) |
| Lead-Free / RoHS | — | Lead-free (UBGA package), RoHS compliant |